Ferroelectric switching properties of highly c-axis oriented YMnO 3 gate capacitors

Ho Nyung Lee, Ik Soo Kim, Yong Tae Kim, Sung Ho Choh, Woo Sik Kim, Hyung Ho Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

YMnO 3 (YMO) thin films were deposited on p-Si(100) substrates by radio frequency sputtering. The deposition conditions of oxygen partial pressure and annealing temperature have significant influences on the preferred orientation of YMO film and the size of memory window. The results of X-ray diffraction showed that the film deposited in an oxygen partial pressure of 0% was highly oriented along the c-axis after annealing at 870°C for 1 hr. However, the films deposited in the oxygen partial pressures of 10-20% showed the polycrystalline phase as well as excess Y 2O 3 content. Typical memory window of the YMO thin film deposited in 0% O 2 was 1.24 V at applied voltage of 5 V, which is 5 times wider than that of the film deposited in 20% O 2 (0.25 V) at the same gate voltage, because the former film was well crystallized along the c-axis.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 5
Publication statusPublished - 1999 Dec 1

Fingerprint

capacitors
partial pressure
oxygen
annealing
electric potential
thin films
radio frequencies
sputtering
diffraction
x rays
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lee, Ho Nyung ; Kim, Ik Soo ; Kim, Yong Tae ; Choh, Sung Ho ; Kim, Woo Sik ; Park, Hyung Ho. / Ferroelectric switching properties of highly c-axis oriented YMnO 3 gate capacitors. In: Journal of the Korean Physical Society. 1999 ; Vol. 35, No. SUPPL. 5.
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abstract = "YMnO 3 (YMO) thin films were deposited on p-Si(100) substrates by radio frequency sputtering. The deposition conditions of oxygen partial pressure and annealing temperature have significant influences on the preferred orientation of YMO film and the size of memory window. The results of X-ray diffraction showed that the film deposited in an oxygen partial pressure of 0{\%} was highly oriented along the c-axis after annealing at 870°C for 1 hr. However, the films deposited in the oxygen partial pressures of 10-20{\%} showed the polycrystalline phase as well as excess Y 2O 3 content. Typical memory window of the YMO thin film deposited in 0{\%} O 2 was 1.24 V at applied voltage of 5 V, which is 5 times wider than that of the film deposited in 20{\%} O 2 (0.25 V) at the same gate voltage, because the former film was well crystallized along the c-axis.",
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Ferroelectric switching properties of highly c-axis oriented YMnO 3 gate capacitors. / Lee, Ho Nyung; Kim, Ik Soo; Kim, Yong Tae; Choh, Sung Ho; Kim, Woo Sik; Park, Hyung Ho.

In: Journal of the Korean Physical Society, Vol. 35, No. SUPPL. 5, 01.12.1999.

Research output: Contribution to journalArticle

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T1 - Ferroelectric switching properties of highly c-axis oriented YMnO 3 gate capacitors

AU - Lee, Ho Nyung

AU - Kim, Ik Soo

AU - Kim, Yong Tae

AU - Choh, Sung Ho

AU - Kim, Woo Sik

AU - Park, Hyung Ho

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AB - YMnO 3 (YMO) thin films were deposited on p-Si(100) substrates by radio frequency sputtering. The deposition conditions of oxygen partial pressure and annealing temperature have significant influences on the preferred orientation of YMO film and the size of memory window. The results of X-ray diffraction showed that the film deposited in an oxygen partial pressure of 0% was highly oriented along the c-axis after annealing at 870°C for 1 hr. However, the films deposited in the oxygen partial pressures of 10-20% showed the polycrystalline phase as well as excess Y 2O 3 content. Typical memory window of the YMO thin film deposited in 0% O 2 was 1.24 V at applied voltage of 5 V, which is 5 times wider than that of the film deposited in 20% O 2 (0.25 V) at the same gate voltage, because the former film was well crystallized along the c-axis.

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