Ferroelectric Tunnel Junction for Dense Cross-Point Arrays

Hong Sub Lee, Wooje Han, Hee Yoon Chung, Marcelo Rozenberg, Kangsik Kim, Zonghoon Lee, Geun Young Yeom, Hyung Ho Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/ BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/ Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Δ Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity.

Original languageEnglish
Pages (from-to)22348-22354
Number of pages7
JournalACS Applied Materials and Interfaces
Volume7
Issue number40
DOIs
Publication statusPublished - 2015 Oct 14

Fingerprint

Memristors
Tunnel junctions
Ferroelectric materials
Thermionic emission
Electron tunneling
Crosstalk
Field emission
Electrostatics
Data storage equipment
Electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Lee, Hong Sub ; Han, Wooje ; Chung, Hee Yoon ; Rozenberg, Marcelo ; Kim, Kangsik ; Lee, Zonghoon ; Yeom, Geun Young ; Park, Hyung Ho. / Ferroelectric Tunnel Junction for Dense Cross-Point Arrays. In: ACS Applied Materials and Interfaces. 2015 ; Vol. 7, No. 40. pp. 22348-22354.
@article{6293e4096b89454283370e818f4b4ad5,
title = "Ferroelectric Tunnel Junction for Dense Cross-Point Arrays",
abstract = "Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/ BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/ Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Δ Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity.",
author = "Lee, {Hong Sub} and Wooje Han and Chung, {Hee Yoon} and Marcelo Rozenberg and Kangsik Kim and Zonghoon Lee and Yeom, {Geun Young} and Park, {Hyung Ho}",
year = "2015",
month = "10",
day = "14",
doi = "10.1021/acsami.5b06117",
language = "English",
volume = "7",
pages = "22348--22354",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "40",

}

Lee, HS, Han, W, Chung, HY, Rozenberg, M, Kim, K, Lee, Z, Yeom, GY & Park, HH 2015, 'Ferroelectric Tunnel Junction for Dense Cross-Point Arrays', ACS Applied Materials and Interfaces, vol. 7, no. 40, pp. 22348-22354. https://doi.org/10.1021/acsami.5b06117

Ferroelectric Tunnel Junction for Dense Cross-Point Arrays. / Lee, Hong Sub; Han, Wooje; Chung, Hee Yoon; Rozenberg, Marcelo; Kim, Kangsik; Lee, Zonghoon; Yeom, Geun Young; Park, Hyung Ho.

In: ACS Applied Materials and Interfaces, Vol. 7, No. 40, 14.10.2015, p. 22348-22354.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ferroelectric Tunnel Junction for Dense Cross-Point Arrays

AU - Lee, Hong Sub

AU - Han, Wooje

AU - Chung, Hee Yoon

AU - Rozenberg, Marcelo

AU - Kim, Kangsik

AU - Lee, Zonghoon

AU - Yeom, Geun Young

AU - Park, Hyung Ho

PY - 2015/10/14

Y1 - 2015/10/14

N2 - Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/ BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/ Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Δ Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity.

AB - Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/ BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/ Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Δ Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity.

UR - http://www.scopus.com/inward/record.url?scp=84944345162&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84944345162&partnerID=8YFLogxK

U2 - 10.1021/acsami.5b06117

DO - 10.1021/acsami.5b06117

M3 - Article

AN - SCOPUS:84944345162

VL - 7

SP - 22348

EP - 22354

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 40

ER -

Lee HS, Han W, Chung HY, Rozenberg M, Kim K, Lee Z et al. Ferroelectric Tunnel Junction for Dense Cross-Point Arrays. ACS Applied Materials and Interfaces. 2015 Oct 14;7(40):22348-22354. https://doi.org/10.1021/acsami.5b06117