Ferroelectric Tunnel Junction for Dense Cross-Point Arrays

Hong Sub Lee, Wooje Han, Hee Yoon Chung, Marcelo Rozenberg, Kangsik Kim, Zonghoon Lee, Geun Young Yeom, Hyung Ho Park

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5 Citations (Scopus)

Abstract

Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/ BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/ Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Δ Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity.

Original languageEnglish
Pages (from-to)22348-22354
Number of pages7
JournalACS Applied Materials and Interfaces
Volume7
Issue number40
DOIs
Publication statusPublished - 2015 Oct 14

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Lee, H. S., Han, W., Chung, H. Y., Rozenberg, M., Kim, K., Lee, Z., Yeom, G. Y., & Park, H. H. (2015). Ferroelectric Tunnel Junction for Dense Cross-Point Arrays. ACS Applied Materials and Interfaces, 7(40), 22348-22354. https://doi.org/10.1021/acsami.5b06117