Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films

J. M. Lee, K. I. Lee, J. Y. Chang, M. H. Ham, K. S. Huh, Jae Min Myoung, W. J. Hwang, Moo Whan Shin, S. H. Han, H. J. Kim, Wooyoung Lee

Research output: Contribution to journalArticle

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Abstract

The magnetic and magnetotransport properties of epitaxial (Ga 1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (Tc), providing Tc≈550 K and Tc≈700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

Original languageEnglish
Pages (from-to)283-287
Number of pages5
JournalMicroelectronic Engineering
Volume69
Issue number2-4
DOIs
Publication statusPublished - 2003 Sep 1

Fingerprint

Epitaxial films
Galvanomagnetic effects
Mean field theory
Sheet resistance
Magnetoresistance
Curie temperature
Molecular beam epitaxy
Temperature
low concentrations
molecular beam epitaxy
magnetic properties
Plasmas
temperature dependence
temperature
curves
estimates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Lee, J. M. ; Lee, K. I. ; Chang, J. Y. ; Ham, M. H. ; Huh, K. S. ; Myoung, Jae Min ; Hwang, W. J. ; Shin, Moo Whan ; Han, S. H. ; Kim, H. J. ; Lee, Wooyoung. / Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films. In: Microelectronic Engineering. 2003 ; Vol. 69, No. 2-4. pp. 283-287.
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abstract = "The magnetic and magnetotransport properties of epitaxial (Ga 1-xMnx)N films with low Mn concentration (x=0.06-0.5{\%}) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (Tc), providing Tc≈550 K and Tc≈700 K, respectively, for the (Ga,Mn)N films with x=0.16{\%} and x=0.50{\%}. Temperature dependence of sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.",
author = "Lee, {J. M.} and Lee, {K. I.} and Chang, {J. Y.} and Ham, {M. H.} and Huh, {K. S.} and Myoung, {Jae Min} and Hwang, {W. J.} and Shin, {Moo Whan} and Han, {S. H.} and Kim, {H. J.} and Wooyoung Lee",
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Lee, JM, Lee, KI, Chang, JY, Ham, MH, Huh, KS, Myoung, JM, Hwang, WJ, Shin, MW, Han, SH, Kim, HJ & Lee, W 2003, 'Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films', Microelectronic Engineering, vol. 69, no. 2-4, pp. 283-287. https://doi.org/10.1016/S0167-9317(03)00311-3

Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films. / Lee, J. M.; Lee, K. I.; Chang, J. Y.; Ham, M. H.; Huh, K. S.; Myoung, Jae Min; Hwang, W. J.; Shin, Moo Whan; Han, S. H.; Kim, H. J.; Lee, Wooyoung.

In: Microelectronic Engineering, Vol. 69, No. 2-4, 01.09.2003, p. 283-287.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films

AU - Lee, J. M.

AU - Lee, K. I.

AU - Chang, J. Y.

AU - Ham, M. H.

AU - Huh, K. S.

AU - Myoung, Jae Min

AU - Hwang, W. J.

AU - Shin, Moo Whan

AU - Han, S. H.

AU - Kim, H. J.

AU - Lee, Wooyoung

PY - 2003/9/1

Y1 - 2003/9/1

N2 - The magnetic and magnetotransport properties of epitaxial (Ga 1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (Tc), providing Tc≈550 K and Tc≈700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

AB - The magnetic and magnetotransport properties of epitaxial (Ga 1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (Tc), providing Tc≈550 K and Tc≈700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

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