The magnetic and magnetotransport properties of epitaxial (Ga 1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (Tc), providing Tc≈550 K and Tc≈700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.
Bibliographical noteFunding Information:
This work was supported by the KIST Vision 21 Program.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering