Structural, electrical resistivity, and magnetization properties of 200-MeV Ag+15 -ion-irradiated Co-implanted ZnO thin films are presented. The structural studies show the presence of Co clusters whose size is found to increase with increase of Co implantation. The implanted films were irradiated with 200-MeV Ag+15 ions to fluence of 1× 1012 ions cm2. The Co clusters on irradiation dissolve in the ZnO matrix. The electrical resistivity of the irradiated samples is lowered to half. The magnetization hysteresis measurements show ferromagnetic behavior at 300 K, and the coercive field increases with the Co implantation. The ferromagnetism at room temperature is confirmed by magnetic force microscopy measurements. The results are explained on the basis of the close interplay between the electrical and the magnetic properties.
Bibliographical noteFunding Information:
This work is financially supported by KIST Future Resource Program (2E18510), R & D project for NT-IT Fusion Strategy of Advanced Technology, and KOSEF under Contract No. R01-2004-000-10715-0. The authors are thankful to IUAC Pelletron group for providing the ion beam.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)