Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor

Iman Shackery, Atiye Pezeshki, Jae Young Park, Umadevi Palanivel, Hyeok Jae Kwon, Hyong Seo Yoon, Seongil Im, Jin Soo Cho, Seong Chan Jun

Research output: Contribution to journalArticle

Abstract

For the first time, we connect in series two α-MoTe2-based Schottky diodes (SDs) to form a back-to-back diode using the micromechanical exfoliation method. The α-MoTe2 SD exhibits an excellent ON/OFF current ratio of ∼103 and low-voltage operation at 5 V. Although various studies of α-MoTe2 field-effect transistors (FETs), phototransistors, and p-n diodes have been reported, there are no reported theoretical or experimental studies of α-MoTe2 for chemical sensing. Here, we experimentally assess the SD and a FET for gas sensing with exposure to different concentrations of NO2 and NH3. Interestingly, the α-MoTe2 SD showed a faster response and recovery time to NH3 and NO2 than the α-MoTe2 FET owing to its Schottky junction, which is favorable for detecting the Schottky-barrier height change due to gas exposure. The SD showed a fast response of 15 s when exposed to 70-ppb NO2 and ∼1 s when exposed to 70 ppb NH3 with a relative resistance change of 13% and 101%, respectively, and this was attributed to its physisorption process. In addition, our results are confirmed by density functional theory. The α-MoTe2-based SD is shown to be promising as an electrical rectifier or as a gas sensor owing to its simple and inexpensive electrical circuitry and excellent performance, including its low voltage, high ON/OFF current ratio and good sensitivity to toxic gases at room temperature. Further, it may be suitable for diverse uses, such as chemical and biosensing applications.

Original languageEnglish
Pages (from-to)10714-10722
Number of pages9
JournalJournal of Materials Chemistry C
Volume6
Issue number40
DOIs
Publication statusPublished - 2018 Jan 1

Fingerprint

Diodes
Vapors
Sensors
Field effect transistors
Gases
Phototransistors
Physisorption
Poisons
Electric potential
Chemical sensors
Density functional theory
Recovery

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Shackery, I., Pezeshki, A., Park, J. Y., Palanivel, U., Kwon, H. J., Yoon, H. S., ... Jun, S. C. (2018). Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor. Journal of Materials Chemistry C, 6(40), 10714-10722. https://doi.org/10.1039/c8tc02635a
Shackery, Iman ; Pezeshki, Atiye ; Park, Jae Young ; Palanivel, Umadevi ; Kwon, Hyeok Jae ; Yoon, Hyong Seo ; Im, Seongil ; Cho, Jin Soo ; Jun, Seong Chan. / Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor. In: Journal of Materials Chemistry C. 2018 ; Vol. 6, No. 40. pp. 10714-10722.
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Shackery, I, Pezeshki, A, Park, JY, Palanivel, U, Kwon, HJ, Yoon, HS, Im, S, Cho, JS & Jun, SC 2018, 'Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor', Journal of Materials Chemistry C, vol. 6, no. 40, pp. 10714-10722. https://doi.org/10.1039/c8tc02635a

Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor. / Shackery, Iman; Pezeshki, Atiye; Park, Jae Young; Palanivel, Umadevi; Kwon, Hyeok Jae; Yoon, Hyong Seo; Im, Seongil; Cho, Jin Soo; Jun, Seong Chan.

In: Journal of Materials Chemistry C, Vol. 6, No. 40, 01.01.2018, p. 10714-10722.

Research output: Contribution to journalArticle

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T1 - Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor

AU - Shackery, Iman

AU - Pezeshki, Atiye

AU - Park, Jae Young

AU - Palanivel, Umadevi

AU - Kwon, Hyeok Jae

AU - Yoon, Hyong Seo

AU - Im, Seongil

AU - Cho, Jin Soo

AU - Jun, Seong Chan

PY - 2018/1/1

Y1 - 2018/1/1

N2 - For the first time, we connect in series two α-MoTe2-based Schottky diodes (SDs) to form a back-to-back diode using the micromechanical exfoliation method. The α-MoTe2 SD exhibits an excellent ON/OFF current ratio of ∼103 and low-voltage operation at 5 V. Although various studies of α-MoTe2 field-effect transistors (FETs), phototransistors, and p-n diodes have been reported, there are no reported theoretical or experimental studies of α-MoTe2 for chemical sensing. Here, we experimentally assess the SD and a FET for gas sensing with exposure to different concentrations of NO2 and NH3. Interestingly, the α-MoTe2 SD showed a faster response and recovery time to NH3 and NO2 than the α-MoTe2 FET owing to its Schottky junction, which is favorable for detecting the Schottky-barrier height change due to gas exposure. The SD showed a fast response of 15 s when exposed to 70-ppb NO2 and ∼1 s when exposed to 70 ppb NH3 with a relative resistance change of 13% and 101%, respectively, and this was attributed to its physisorption process. In addition, our results are confirmed by density functional theory. The α-MoTe2-based SD is shown to be promising as an electrical rectifier or as a gas sensor owing to its simple and inexpensive electrical circuitry and excellent performance, including its low voltage, high ON/OFF current ratio and good sensitivity to toxic gases at room temperature. Further, it may be suitable for diverse uses, such as chemical and biosensing applications.

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Shackery I, Pezeshki A, Park JY, Palanivel U, Kwon HJ, Yoon HS et al. Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor. Journal of Materials Chemistry C. 2018 Jan 1;6(40):10714-10722. https://doi.org/10.1039/c8tc02635a