Field effect transistor with ZnS active layer on ITO/glass substrate

In Jae Back, Su Cheol Gong, Hun Seoung Lim, Ik Sub Shin, Seoun Woo Kuk, In Hoe Kim, Hyung Tag Jeon, Hyung Ho Park, Ho Jung Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1 × 10-8A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.

Original languageEnglish
Title of host publicationEco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design
PublisherTrans Tech Publications Ltd
Pages753-756
Number of pages4
ISBN (Print)0878494316, 9780878494316
DOIs
Publication statusPublished - 2007
Event8th International Symposium on Eco-Materials Processing and Design, ISEPD-8 - Kitakyushu, Japan
Duration: 2007 Jan 112007 Jan 13

Publication series

NameMaterials Science Forum
Volume544-545
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other8th International Symposium on Eco-Materials Processing and Design, ISEPD-8
CountryJapan
CityKitakyushu
Period07/1/1107/1/13

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Back, I. J., Gong, S. C., Lim, H. S., Shin, I. S., Kuk, S. W., Kim, I. H., Jeon, H. T., Park, H. H., & Chang, H. J. (2007). Field effect transistor with ZnS active layer on ITO/glass substrate. In Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design (pp. 753-756). (Materials Science Forum; Vol. 544-545). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-431-6.753