Field effect transistor with ZnS active layer on ITO/glass substrate

In Jae Back; Su Cheol Gong; Hun Seoung Lim; Ik Sub Shin; Seoun Woo Kuk; In Hoe Kim; Hyung Tag Jeon; Hyung Ho Park; Ho Jung Chang

doi:10.4028/0-87849-431-6.753

Field effect transistor with ZnS active layer on ITO/glass substrate

In Jae Back, Su Cheol Gong, Hun Seoung Lim, Ik Sub Shin, Seoun Woo Kuk, In Hoe Kim, Hyung Tag Jeon, Hyung Ho Park, Ho Jung Chang

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1 × 10^-8A and 12 nF/cm², showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO₂/Si wafer was found to be -9.4×10¹⁵ cm^-3 and 49.0 cm²/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm²/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO₂/Si substrate may be attributed to a rough surface morphology of ZnS film.

Original language	English
Title of host publication	Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design
Publisher	Trans Tech Publications Ltd
Pages	753-756
Number of pages	4
ISBN (Print)	0878494316, 9780878494316
DOIs	https://doi.org/10.4028/0-87849-431-6.753
Publication status	Published - 2007
Event	8th International Symposium on Eco-Materials Processing and Design, ISEPD-8 - Kitakyushu, Japan Duration: 2007 Jan 11 → 2007 Jan 13

Publication series

Name	Materials Science Forum
Volume	544-545
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	8th International Symposium on Eco-Materials Processing and Design, ISEPD-8
Country	Japan
City	Kitakyushu
Period	07/1/11 → 07/1/13

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/0-87849-431-6.753

Fingerprint Dive into the research topics of 'Field effect transistor with ZnS active layer on ITO/glass substrate'. Together they form a unique fingerprint.

Cite this

Back, I. J., Gong, S. C., Lim, H. S., Shin, I. S., Kuk, S. W., Kim, I. H., Jeon, H. T., Park, H. H., & Chang, H. J. (2007). Field effect transistor with ZnS active layer on ITO/glass substrate. In Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design (pp. 753-756). (Materials Science Forum; Vol. 544-545). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-431-6.753

Back, In Jae ; Gong, Su Cheol ; Lim, Hun Seoung ; Shin, Ik Sub ; Kuk, Seoun Woo ; Kim, In Hoe ; Jeon, Hyung Tag ; Park, Hyung Ho ; Chang, Ho Jung. / Field effect transistor with ZnS active layer on ITO/glass substrate. Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design. Trans Tech Publications Ltd, 2007. pp. 753-756 (Materials Science Forum).

@inproceedings{08e6c696160a49fda4065f9ba15d82f6,

title = "Field effect transistor with ZnS active layer on ITO/glass substrate",

abstract = "The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1 × 10-8A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.",

author = "Back, {In Jae} and Gong, {Su Cheol} and Lim, {Hun Seoung} and Shin, {Ik Sub} and Kuk, {Seoun Woo} and Kim, {In Hoe} and Jeon, {Hyung Tag} and Park, {Hyung Ho} and Chang, {Ho Jung}",

year = "2007",

doi = "10.4028/0-87849-431-6.753",

language = "English",

isbn = "0878494316",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "753--756",

booktitle = "Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design",

}

Back, IJ, Gong, SC, Lim, HS, Shin, IS, Kuk, SW, Kim, IH, Jeon, HT, Park, HH & Chang, HJ 2007, Field effect transistor with ZnS active layer on ITO/glass substrate. in Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design. Materials Science Forum, vol. 544-545, Trans Tech Publications Ltd, pp. 753-756, 8th International Symposium on Eco-Materials Processing and Design, ISEPD-8, Kitakyushu, Japan, 07/1/11. https://doi.org/10.4028/0-87849-431-6.753

Field effect transistor with ZnS active layer on ITO/glass substrate. / Back, In Jae; Gong, Su Cheol; Lim, Hun Seoung; Shin, Ik Sub; Kuk, Seoun Woo; Kim, In Hoe; Jeon, Hyung Tag; Park, Hyung Ho; Chang, Ho Jung.

Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design. Trans Tech Publications Ltd, 2007. p. 753-756 (Materials Science Forum; Vol. 544-545).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Field effect transistor with ZnS active layer on ITO/glass substrate

AU - Back, In Jae

AU - Gong, Su Cheol

AU - Lim, Hun Seoung

AU - Shin, Ik Sub

AU - Kuk, Seoun Woo

AU - Kim, In Hoe

AU - Jeon, Hyung Tag

AU - Park, Hyung Ho

AU - Chang, Ho Jung

PY - 2007

Y1 - 2007

N2 - The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1 × 10-8A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.

AB - The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1 × 10-8A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.

UR - http://www.scopus.com/inward/record.url?scp=38349132606&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38349132606&partnerID=8YFLogxK

U2 - 10.4028/0-87849-431-6.753

DO - 10.4028/0-87849-431-6.753

M3 - Conference contribution

AN - SCOPUS:38349132606

SN - 0878494316

SN - 9780878494316

T3 - Materials Science Forum

SP - 753

EP - 756

BT - Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design

PB - Trans Tech Publications Ltd

T2 - 8th International Symposium on Eco-Materials Processing and Design, ISEPD-8

Y2 - 11 January 2007 through 13 January 2007

ER -

Back IJ, Gong SC, Lim HS, Shin IS, Kuk SW, Kim IH et al. Field effect transistor with ZnS active layer on ITO/glass substrate. In Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design. Trans Tech Publications Ltd. 2007. p. 753-756. (Materials Science Forum). https://doi.org/10.4028/0-87849-431-6.753