@inproceedings{08e6c696160a49fda4065f9ba15d82f6,
title = "Field effect transistor with ZnS active layer on ITO/glass substrate",
abstract = "The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1 × 10-8A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.",
author = "Back, {In Jae} and Gong, {Su Cheol} and Lim, {Hun Seoung} and Shin, {Ik Sub} and Kuk, {Seoun Woo} and Kim, {In Hoe} and Jeon, {Hyung Tag} and Park, {Hyung Ho} and Chang, {Ho Jung}",
year = "2007",
doi = "10.4028/0-87849-431-6.753",
language = "English",
isbn = "0878494316",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "753--756",
booktitle = "Eco-Materials Processing and Design VIII - ISEPD-8, Proceedings of the 8th International Symposium on Eco-Materials Processing and Design",
note = "8th International Symposium on Eco-Materials Processing and Design, ISEPD-8 ; Conference date: 11-01-2007 Through 13-01-2007",
}