Field emission characteristic of diamond films grown by electron assisted chemical vapor deposition

Jae Yeob Shim, Eung Joon Chi, Hong Koo Baik, Kie Moon Song

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

By introducing positive substrate bias, ranging from 0 to 200 V, to the substrate during the growing procedure of diamond at 1, 2, and 3% CH4 concentration, we have investigated the effect of electron bombardment on modification of the structural property and the surface morphology of diamond films, and consequently the field emission properties. When increasing the bias voltage for each CH4 concentration, the structural properties of diamond films are significantly deteriorated together while the non-diamond carbon component increased and the surface morphologies of the films lost their unique facet shape. The reason for the deterioration of the structural property was attributed to both the increase of substrate temperature and the excessive generation of CHn radicals. Especially for the films deposited at 2% CH4 concentration under 100 V, it was observed that their morphological and structural characteristics approached those of graphitic carbon nature. The field emission properties of diamond films were substantially improved with increasing the CH4 concentration and with the application of bias voltage for each CH4 concentration. In order to investigate the correlation between the enhancement of field emission properties and the emission sites, we have examined the spatial distribution of the emission sites. From this result, a possible emission mechanism is discussed.

Original languageEnglish
Pages (from-to)223-228
Number of pages6
JournalThin Solid Films
Volume355
DOIs
Publication statusPublished - 1999 Nov 1
EventProceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA
Duration: 1999 Apr 121999 Apr 15

Fingerprint

Diamond films
diamond films
Field emission
Structural properties
field emission
Chemical vapor deposition
vapor deposition
Bias voltage
Surface morphology
Electrons
Substrates
Carbon
Diamond
electrons
Spatial distribution
Deterioration
Diamonds
electron bombardment
carbon
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Shim, Jae Yeob ; Chi, Eung Joon ; Baik, Hong Koo ; Song, Kie Moon. / Field emission characteristic of diamond films grown by electron assisted chemical vapor deposition. In: Thin Solid Films. 1999 ; Vol. 355. pp. 223-228.
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Field emission characteristic of diamond films grown by electron assisted chemical vapor deposition. / Shim, Jae Yeob; Chi, Eung Joon; Baik, Hong Koo; Song, Kie Moon.

In: Thin Solid Films, Vol. 355, 01.11.1999, p. 223-228.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Field emission characteristic of diamond films grown by electron assisted chemical vapor deposition

AU - Shim, Jae Yeob

AU - Chi, Eung Joon

AU - Baik, Hong Koo

AU - Song, Kie Moon

PY - 1999/11/1

Y1 - 1999/11/1

N2 - By introducing positive substrate bias, ranging from 0 to 200 V, to the substrate during the growing procedure of diamond at 1, 2, and 3% CH4 concentration, we have investigated the effect of electron bombardment on modification of the structural property and the surface morphology of diamond films, and consequently the field emission properties. When increasing the bias voltage for each CH4 concentration, the structural properties of diamond films are significantly deteriorated together while the non-diamond carbon component increased and the surface morphologies of the films lost their unique facet shape. The reason for the deterioration of the structural property was attributed to both the increase of substrate temperature and the excessive generation of CHn radicals. Especially for the films deposited at 2% CH4 concentration under 100 V, it was observed that their morphological and structural characteristics approached those of graphitic carbon nature. The field emission properties of diamond films were substantially improved with increasing the CH4 concentration and with the application of bias voltage for each CH4 concentration. In order to investigate the correlation between the enhancement of field emission properties and the emission sites, we have examined the spatial distribution of the emission sites. From this result, a possible emission mechanism is discussed.

AB - By introducing positive substrate bias, ranging from 0 to 200 V, to the substrate during the growing procedure of diamond at 1, 2, and 3% CH4 concentration, we have investigated the effect of electron bombardment on modification of the structural property and the surface morphology of diamond films, and consequently the field emission properties. When increasing the bias voltage for each CH4 concentration, the structural properties of diamond films are significantly deteriorated together while the non-diamond carbon component increased and the surface morphologies of the films lost their unique facet shape. The reason for the deterioration of the structural property was attributed to both the increase of substrate temperature and the excessive generation of CHn radicals. Especially for the films deposited at 2% CH4 concentration under 100 V, it was observed that their morphological and structural characteristics approached those of graphitic carbon nature. The field emission properties of diamond films were substantially improved with increasing the CH4 concentration and with the application of bias voltage for each CH4 concentration. In order to investigate the correlation between the enhancement of field emission properties and the emission sites, we have examined the spatial distribution of the emission sites. From this result, a possible emission mechanism is discussed.

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