Field emission characteristics of cesiated amorphous carbon films by negative carbon ion

Dong Won Han, Yong Hwan Kim, Dong Jun Choi, Eung Joon Chi, Woo Young Yoon, Hong Koo Baik

Research output: Contribution to journalConference article

Abstract

Amorphous carbon (a-C) films and cesiated a-C films were synthesized on silicon substrate by Cs ion gun sputter deposition system (Cs IGSDS). The properties of a-C film were analyzed by X-ray photoelectron spectroscopy, Raman spectroscopy, and atomic force microscopy, As the negative carbon ion energy increased, relative sp3 ratio in the a-C film increased, and surface roughness decreased. The field emission characteristics of the a-C films as a function of negative carbon ion energy were examined by diode type I-V measurement at ultra high vacuum system. From I-V measurements, the threshold voltage increased with the increase of negative carbon ion energy, and the range from 11 to 16 V/μm was obtained. To investigate the Cs effect, cesiated a-C films were prepared by Cs+ ion and C- ion co-deposition and field emission characteristics of the cesiated a-C films were observed, too. Compared to non-cesiated a-C films, the threshold voltage is decreased by the Cs co-deposition and the value was about 6 V/μm. In this study, we investigate that the relation between carbon ion energy and field emission, and the effect of Cs in the a-C films were examined.

Original languageEnglish
Pages (from-to)199-204
Number of pages6
JournalThin Solid Films
Volume355
DOIs
Publication statusPublished - 1999 Nov 1
EventProceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA
Duration: 1999 Apr 121999 Apr 15

Fingerprint

Carbon films
Amorphous carbon
Amorphous films
Field emission
field emission
Carbon
Ions
carbon
ions
Threshold voltage
threshold voltage
Sputter deposition
Ultrahigh vacuum
Silicon
Ion sources
Raman spectroscopy
Atomic force microscopy
Diodes
energy
X ray photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Won Han, Dong ; Hwan Kim, Yong ; Jun Choi, Dong ; Joon Chi, Eung ; Young Yoon, Woo ; Baik, Hong Koo. / Field emission characteristics of cesiated amorphous carbon films by negative carbon ion. In: Thin Solid Films. 1999 ; Vol. 355. pp. 199-204.
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Field emission characteristics of cesiated amorphous carbon films by negative carbon ion. / Won Han, Dong; Hwan Kim, Yong; Jun Choi, Dong; Joon Chi, Eung; Young Yoon, Woo; Baik, Hong Koo.

In: Thin Solid Films, Vol. 355, 01.11.1999, p. 199-204.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Field emission characteristics of cesiated amorphous carbon films by negative carbon ion

AU - Won Han, Dong

AU - Hwan Kim, Yong

AU - Jun Choi, Dong

AU - Joon Chi, Eung

AU - Young Yoon, Woo

AU - Baik, Hong Koo

PY - 1999/11/1

Y1 - 1999/11/1

N2 - Amorphous carbon (a-C) films and cesiated a-C films were synthesized on silicon substrate by Cs ion gun sputter deposition system (Cs IGSDS). The properties of a-C film were analyzed by X-ray photoelectron spectroscopy, Raman spectroscopy, and atomic force microscopy, As the negative carbon ion energy increased, relative sp3 ratio in the a-C film increased, and surface roughness decreased. The field emission characteristics of the a-C films as a function of negative carbon ion energy were examined by diode type I-V measurement at ultra high vacuum system. From I-V measurements, the threshold voltage increased with the increase of negative carbon ion energy, and the range from 11 to 16 V/μm was obtained. To investigate the Cs effect, cesiated a-C films were prepared by Cs+ ion and C- ion co-deposition and field emission characteristics of the cesiated a-C films were observed, too. Compared to non-cesiated a-C films, the threshold voltage is decreased by the Cs co-deposition and the value was about 6 V/μm. In this study, we investigate that the relation between carbon ion energy and field emission, and the effect of Cs in the a-C films were examined.

AB - Amorphous carbon (a-C) films and cesiated a-C films were synthesized on silicon substrate by Cs ion gun sputter deposition system (Cs IGSDS). The properties of a-C film were analyzed by X-ray photoelectron spectroscopy, Raman spectroscopy, and atomic force microscopy, As the negative carbon ion energy increased, relative sp3 ratio in the a-C film increased, and surface roughness decreased. The field emission characteristics of the a-C films as a function of negative carbon ion energy were examined by diode type I-V measurement at ultra high vacuum system. From I-V measurements, the threshold voltage increased with the increase of negative carbon ion energy, and the range from 11 to 16 V/μm was obtained. To investigate the Cs effect, cesiated a-C films were prepared by Cs+ ion and C- ion co-deposition and field emission characteristics of the cesiated a-C films were observed, too. Compared to non-cesiated a-C films, the threshold voltage is decreased by the Cs co-deposition and the value was about 6 V/μm. In this study, we investigate that the relation between carbon ion energy and field emission, and the effect of Cs in the a-C films were examined.

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