Field emission property of chemical vapor deposited diamond overlayer films

Kie Moon Song, Jae Yeob Shim, Hong Koo Baik

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effect of diamond overlayer films on field emission properties has been studied. When conductive diamond layers are deposited on high quality diamond films, the non-diamond carbon contents in the films are increased with increasing overlayer thickness. The increase of overlayer thickness improves significantly both the electron emission currents and the number of emission sites. The threshold field of the diamond films grown at 2% CH4/H2 decreases from 12.0 to 7.7 μm-1 with post-growth at 10% CH4/H2 for 5 min. The enhancement of field emission is explained by the improvement of electron transport through the high quality diamond layer by the field enhancement across the diamond layer. On the contrary, when the non- conductive diamond layers are grown on the conductive diamond films, both the electron emission currents and the number of emission sites degrade markedly with the increase of overlayer thickness while there is no substantial change in structure and morphology of the films. These degradations are attributed to both the electron transport through the overlayer and the reduction of the triple junction effect.

Original languageEnglish
Pages (from-to)185-190
Number of pages6
JournalDiamond and Related Materials
Volume11
Issue number2
DOIs
Publication statusPublished - 2002 Feb 1

Fingerprint

Diamond
Diamond films
diamond films
Field emission
field emission
Diamonds
diamonds
Vapors
vapors
Electron emission
electron emission
Conductive films
augmentation
electrons
Carbon
degradation
Degradation
thresholds
carbon
Electron Transport

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

@article{7571a7709dff49ffba6d27651c8a400c,
title = "Field emission property of chemical vapor deposited diamond overlayer films",
abstract = "The effect of diamond overlayer films on field emission properties has been studied. When conductive diamond layers are deposited on high quality diamond films, the non-diamond carbon contents in the films are increased with increasing overlayer thickness. The increase of overlayer thickness improves significantly both the electron emission currents and the number of emission sites. The threshold field of the diamond films grown at 2{\%} CH4/H2 decreases from 12.0 to 7.7 μm-1 with post-growth at 10{\%} CH4/H2 for 5 min. The enhancement of field emission is explained by the improvement of electron transport through the high quality diamond layer by the field enhancement across the diamond layer. On the contrary, when the non- conductive diamond layers are grown on the conductive diamond films, both the electron emission currents and the number of emission sites degrade markedly with the increase of overlayer thickness while there is no substantial change in structure and morphology of the films. These degradations are attributed to both the electron transport through the overlayer and the reduction of the triple junction effect.",
author = "Song, {Kie Moon} and Shim, {Jae Yeob} and Baik, {Hong Koo}",
year = "2002",
month = "2",
day = "1",
doi = "10.1016/S0925-9635(01)00565-9",
language = "English",
volume = "11",
pages = "185--190",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "2",

}

Field emission property of chemical vapor deposited diamond overlayer films. / Song, Kie Moon; Shim, Jae Yeob; Baik, Hong Koo.

In: Diamond and Related Materials, Vol. 11, No. 2, 01.02.2002, p. 185-190.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Field emission property of chemical vapor deposited diamond overlayer films

AU - Song, Kie Moon

AU - Shim, Jae Yeob

AU - Baik, Hong Koo

PY - 2002/2/1

Y1 - 2002/2/1

N2 - The effect of diamond overlayer films on field emission properties has been studied. When conductive diamond layers are deposited on high quality diamond films, the non-diamond carbon contents in the films are increased with increasing overlayer thickness. The increase of overlayer thickness improves significantly both the electron emission currents and the number of emission sites. The threshold field of the diamond films grown at 2% CH4/H2 decreases from 12.0 to 7.7 μm-1 with post-growth at 10% CH4/H2 for 5 min. The enhancement of field emission is explained by the improvement of electron transport through the high quality diamond layer by the field enhancement across the diamond layer. On the contrary, when the non- conductive diamond layers are grown on the conductive diamond films, both the electron emission currents and the number of emission sites degrade markedly with the increase of overlayer thickness while there is no substantial change in structure and morphology of the films. These degradations are attributed to both the electron transport through the overlayer and the reduction of the triple junction effect.

AB - The effect of diamond overlayer films on field emission properties has been studied. When conductive diamond layers are deposited on high quality diamond films, the non-diamond carbon contents in the films are increased with increasing overlayer thickness. The increase of overlayer thickness improves significantly both the electron emission currents and the number of emission sites. The threshold field of the diamond films grown at 2% CH4/H2 decreases from 12.0 to 7.7 μm-1 with post-growth at 10% CH4/H2 for 5 min. The enhancement of field emission is explained by the improvement of electron transport through the high quality diamond layer by the field enhancement across the diamond layer. On the contrary, when the non- conductive diamond layers are grown on the conductive diamond films, both the electron emission currents and the number of emission sites degrade markedly with the increase of overlayer thickness while there is no substantial change in structure and morphology of the films. These degradations are attributed to both the electron transport through the overlayer and the reduction of the triple junction effect.

UR - http://www.scopus.com/inward/record.url?scp=0036473460&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036473460&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(01)00565-9

DO - 10.1016/S0925-9635(01)00565-9

M3 - Article

VL - 11

SP - 185

EP - 190

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 2

ER -