Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiO x/TiN

Dong Hyeok Lim, Ga Yeon Kim, Jin Ho Song, Kwang Sik Jeong, Dae Hong Ko, Mann Ho Cho

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The decidedly unusual co-occurrence of bipolar, complementary, and unipolar resistive switching (BRS, CRS, and URS, respectively) behavior under the same high set current compliance (set-CC) is discussed on the basis of filament geometry in a Pt/SiO x/TiN stack. Set-CC-dependent scaling behavior with relations I reset '∼'R 0 -α and V reset '∼'R 0 -β differentiates BRS under low set-CC from other switching behaviors under high set-CC due to a low α and β involving a narrow filamentary path. Because such co-occurrence is observed only in the case of a high α and β involving a wide filamentary path, such a path can be classified into three different geometries according to switching behavior in detail. From the cyclic switching and a model simulation, we conclude that the reset of BRS originates from a narrower filamentary path near the top electrode than that of CRS due to the randomness of field-driven migration even under the same set-CC. Also, we conclude that URS originates from much narrower inversed conical filamentary path. Therefore, filament-geometry-dependent electric field and/or thermal effects can precisely describe the entire switching behaviors in this experiment.

Original languageEnglish
Article number15374
JournalScientific reports
Volume5
DOIs
Publication statusPublished - 2015 Oct 22

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filaments
geometry
occurrences
temperature effects
scaling
electrodes
electric fields
simulation

All Science Journal Classification (ASJC) codes

  • General

Cite this

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title = "Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiO x/TiN",
abstract = "The decidedly unusual co-occurrence of bipolar, complementary, and unipolar resistive switching (BRS, CRS, and URS, respectively) behavior under the same high set current compliance (set-CC) is discussed on the basis of filament geometry in a Pt/SiO x/TiN stack. Set-CC-dependent scaling behavior with relations I reset '∼'R 0 -α and V reset '∼'R 0 -β differentiates BRS under low set-CC from other switching behaviors under high set-CC due to a low α and β involving a narrow filamentary path. Because such co-occurrence is observed only in the case of a high α and β involving a wide filamentary path, such a path can be classified into three different geometries according to switching behavior in detail. From the cyclic switching and a model simulation, we conclude that the reset of BRS originates from a narrower filamentary path near the top electrode than that of CRS due to the randomness of field-driven migration even under the same set-CC. Also, we conclude that URS originates from much narrower inversed conical filamentary path. Therefore, filament-geometry-dependent electric field and/or thermal effects can precisely describe the entire switching behaviors in this experiment.",
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Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiO x/TiN. / Lim, Dong Hyeok; Kim, Ga Yeon; Song, Jin Ho; Jeong, Kwang Sik; Ko, Dae Hong; Cho, Mann Ho.

In: Scientific reports, Vol. 5, 15374, 22.10.2015.

Research output: Contribution to journalArticle

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