Film properties of Al thin films depending on process parameters and film thickness grown by sputter

Il Kwon Oh, Chang Mo Yoon, Jin Wook Jang, Hyungjun Kim

Research output: Contribution to journalArticle

Abstract

We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and 100 °C. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

Original languageEnglish
Pages (from-to)438-443
Number of pages6
JournalKorean Journal of Materials Research
Volume26
Issue number8
DOIs
Publication statusPublished - 2016 Jan 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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