Abstract
Exploring beyond monoelemental and binary two-dimensional (2D) nanomaterials is an important step to further engineer and functionalize well-known 2D nanomaterials for the next-generation technologies. In this work, using state-of-the-art first-principles electronic structure calculations and statistical sampling of structural configurations, we examine the influence of anionic exchange in two monolayer group IV (namely, Ge- and Sn-based) monochalcogenides. Using chemical bonding analysis, we demonstrate the link between anisotropic lattice properties and band structure-derived characteristics. We also show how this structural anisotropy and iono-covalency chemical bonding may both strongly influence the direction-dependent optical responses and have a milder effect on direction-dependent thermoelectric power factor in these monolayer group IV alloys. This allows one to consider the linear Vegard's relation for anionic engineering of monolayer group IV alloys and further explore strong (and weak) anisotropy in their direction-dependent material properties.
Original language | English |
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Pages (from-to) | 5912-5920 |
Number of pages | 9 |
Journal | ACS Applied Nano Materials |
Volume | 4 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2021 Jun 25 |
Bibliographical note
Funding Information:The authors gratefully acknowledge support from the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT under the Creative Materials Discovery Program (NRF grant no. 2018M3D1A1058536) and additional support from Yonsei Future-Leading Research Initiative (Challenging Research Program) (Y2019-22-0099). Computational resources are provided by the Korean Institute of Science and Technology Information (KISTI) supercomputing center through the strategic support program for supercomputing application research (KSC-2019-CRE-0174).
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All Science Journal Classification (ASJC) codes
- Materials Science(all)