Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer

W. J. Maeng; Woo Hee Kim; Ja Hoon Koo; S. J. Lim; Chang Soo Lee; Taeyoon Lee; Hyungjun Kim

doi:10.1063/1.3330929

Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO₂ layer

W. J. Maeng, Woo Hee Kim, Ja Hoon Koo, S. J. Lim, Chang Soo Lee, Taeyoon Lee, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Titanium oxide (TiO₂) layer was used to control the flatband voltage (VFB) of p-type metal-oxide-semiconductor field effect transistors. TiO₂ was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO₂) gate dielectrics. Comparative studies between TiO₂ and Al₂O₃ as capping layer have shown that improved device properties with lower capacitance equivalent thickness (CET), interface state density (Dit), and flatband voltage (VFB) shift were achieved by PE-ALD TiO₂ capping layer.

Original language	English
Article number	082905
Journal	Applied Physics Letters
Volume	96
Issue number	8
DOIs	https://doi.org/10.1063/1.3330929
Publication status	Published - 2010

Bibliographical note

Funding Information:
This work was supported by the Technology Innovation Program funded by the Ministry of Knowledge Economy (MKE, Korea, Grant No. 10030519). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) and by Nano R&D program and Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant Nos. 2009-0083749, 2009-0082853, and 2009–0093823).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3330929

Cite this

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title = "Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer",

abstract = "Titanium oxide (TiO2) layer was used to control the flatband voltage (VFB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics. Comparative studies between TiO2 and Al2O3 as capping layer have shown that improved device properties with lower capacitance equivalent thickness (CET), interface state density (Dit), and flatband voltage (VFB) shift were achieved by PE-ALD TiO2 capping layer.",

author = "Maeng, {W. J.} and Kim, {Woo Hee} and Koo, {Ja Hoon} and Lim, {S. J.} and Lee, {Chang Soo} and Taeyoon Lee and Hyungjun Kim",

note = "Funding Information: This work was supported by the Technology Innovation Program funded by the Ministry of Knowledge Economy (MKE, Korea, Grant No. 10030519). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) and by Nano R&D program and Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant Nos. 2009-0083749, 2009-0082853, and 2009–0093823).",

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AU - Maeng, W. J.

AU - Kim, Woo Hee

AU - Koo, Ja Hoon

AU - Lim, S. J.

AU - Lee, Chang Soo

AU - Lee, Taeyoon

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by the Technology Innovation Program funded by the Ministry of Knowledge Economy (MKE, Korea, Grant No. 10030519). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) and by Nano R&D program and Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant Nos. 2009-0083749, 2009-0082853, and 2009–0093823).

PY - 2010

Y1 - 2010

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AB - Titanium oxide (TiO2) layer was used to control the flatband voltage (VFB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics. Comparative studies between TiO2 and Al2O3 as capping layer have shown that improved device properties with lower capacitance equivalent thickness (CET), interface state density (Dit), and flatband voltage (VFB) shift were achieved by PE-ALD TiO2 capping layer.

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