Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer

W. J. Maeng, Woo Hee Kim, Ja Hoon Koo, S. J. Lim, Chang Soo Lee, Taeyoon Lee, Hyungjun Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Titanium oxide (TiO2) layer was used to control the flatband voltage (VFB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics. Comparative studies between TiO2 and Al2O3 as capping layer have shown that improved device properties with lower capacitance equivalent thickness (CET), interface state density (Dit), and flatband voltage (VFB) shift were achieved by PE-ALD TiO2 capping layer.

Original languageEnglish
Article number082905
JournalApplied Physics Letters
Volume96
Issue number8
DOIs
Publication statusPublished - 2010 Mar 12

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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