Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer

W. J. Maeng, Woo Hee Kim, Ja Hoon Koo, S. J. Lim, Chang Soo Lee, Taeyoon Lee, Hyungjun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Titanium oxide (TiO2) layer was used to control the flatband voltage (VFB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics. Comparative studies between TiO2 and Al2O3 as capping layer have shown that improved device properties with lower capacitance equivalent thickness (CET), interface state density (Dit), and flatband voltage (VFB) shift were achieved by PE-ALD TiO2 capping layer.

Original languageEnglish
Article number082905
JournalApplied Physics Letters
Volume96
Issue number8
DOIs
Publication statusPublished - 2010 Mar 12

Fingerprint

metal oxide semiconductors
insertion
field effect transistors
atomic layer epitaxy
electric potential
metals
hafnium oxides
p-type semiconductors
titanium oxides
capacitance
shift

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Titanium oxide (TiO2) layer was used to control the flatband voltage (VFB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics. Comparative studies between TiO2 and Al2O3 as capping layer have shown that improved device properties with lower capacitance equivalent thickness (CET), interface state density (Dit), and flatband voltage (VFB) shift were achieved by PE-ALD TiO2 capping layer.",
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Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer. / Maeng, W. J.; Kim, Woo Hee; Koo, Ja Hoon; Lim, S. J.; Lee, Chang Soo; Lee, Taeyoon; Kim, Hyungjun.

In: Applied Physics Letters, Vol. 96, No. 8, 082905, 12.03.2010.

Research output: Contribution to journalArticle

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AU - Maeng, W. J.

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AU - Lee, Chang Soo

AU - Lee, Taeyoon

AU - Kim, Hyungjun

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