Titanium oxide (TiO2) layer was used to control the flatband voltage (VFB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics. Comparative studies between TiO2 and Al2O3 as capping layer have shown that improved device properties with lower capacitance equivalent thickness (CET), interface state density (Dit), and flatband voltage (VFB) shift were achieved by PE-ALD TiO2 capping layer.
Bibliographical noteFunding Information:
This work was supported by the Technology Innovation Program funded by the Ministry of Knowledge Economy (MKE, Korea, Grant No. 10030519). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) and by Nano R&D program and Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant Nos. 2009-0083749, 2009-0082853, and 2009–0093823).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)