Flatband voltage instability characteristics of HfO2 -based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer

Hyoung Sub Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, Jungwoo Oh, Prashant Majhi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

This work investigates the flatband voltage instability of HfO2 -based GaAs metal-oxide-semiconductor (MOS) capacitor with a thin germanium (Ge) interfacial passivation layer (IPL). Both positive and negative dc gate biases are used as stress condition. By studying various samples such as the devices with extremely thin equivalent oxide thickness of 8.7 Å, with optimum, thick Ge IPLs, and without Ge IPL at a given HfO2 thickness, as well as the devices with varying thicknesses of HfO2 on the optimum Ge IPLs, it is found that both the interface trap and the bulk trap of HfO2 are crucial in affecting the flatband voltage instability characteristics of HfO2 GaAs MOS capacitors. The results indicate that the minimum flatband voltage instability requires a higher quality interface and a thinner HfO2 layer, which can be achieved by employing Ge IPL technique in GaAs system.

Original languageEnglish
Article number102904
JournalApplied Physics Letters
Volume92
Issue number10
DOIs
Publication statusPublished - 2008 Mar 24

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metal oxide semiconductors
germanium
capacitors
passivity
electric potential
traps
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Hyoung Sub ; Ok, I. ; Zhang, M. ; Zhu, F. ; Park, S. ; Yum, J. ; Zhao, H. ; Lee, Jack C. ; Oh, Jungwoo ; Majhi, Prashant. / Flatband voltage instability characteristics of HfO2 -based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer. In: Applied Physics Letters. 2008 ; Vol. 92, No. 10.
@article{b60b5948d23c4f8fb1e868d1c87da9cd,
title = "Flatband voltage instability characteristics of HfO2 -based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer",
abstract = "This work investigates the flatband voltage instability of HfO2 -based GaAs metal-oxide-semiconductor (MOS) capacitor with a thin germanium (Ge) interfacial passivation layer (IPL). Both positive and negative dc gate biases are used as stress condition. By studying various samples such as the devices with extremely thin equivalent oxide thickness of 8.7 {\AA}, with optimum, thick Ge IPLs, and without Ge IPL at a given HfO2 thickness, as well as the devices with varying thicknesses of HfO2 on the optimum Ge IPLs, it is found that both the interface trap and the bulk trap of HfO2 are crucial in affecting the flatband voltage instability characteristics of HfO2 GaAs MOS capacitors. The results indicate that the minimum flatband voltage instability requires a higher quality interface and a thinner HfO2 layer, which can be achieved by employing Ge IPL technique in GaAs system.",
author = "Kim, {Hyoung Sub} and I. Ok and M. Zhang and F. Zhu and S. Park and J. Yum and H. Zhao and Lee, {Jack C.} and Jungwoo Oh and Prashant Majhi",
year = "2008",
month = "3",
day = "24",
doi = "10.1063/1.2844883",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

Flatband voltage instability characteristics of HfO2 -based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer. / Kim, Hyoung Sub; Ok, I.; Zhang, M.; Zhu, F.; Park, S.; Yum, J.; Zhao, H.; Lee, Jack C.; Oh, Jungwoo; Majhi, Prashant.

In: Applied Physics Letters, Vol. 92, No. 10, 102904, 24.03.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Flatband voltage instability characteristics of HfO2 -based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer

AU - Kim, Hyoung Sub

AU - Ok, I.

AU - Zhang, M.

AU - Zhu, F.

AU - Park, S.

AU - Yum, J.

AU - Zhao, H.

AU - Lee, Jack C.

AU - Oh, Jungwoo

AU - Majhi, Prashant

PY - 2008/3/24

Y1 - 2008/3/24

N2 - This work investigates the flatband voltage instability of HfO2 -based GaAs metal-oxide-semiconductor (MOS) capacitor with a thin germanium (Ge) interfacial passivation layer (IPL). Both positive and negative dc gate biases are used as stress condition. By studying various samples such as the devices with extremely thin equivalent oxide thickness of 8.7 Å, with optimum, thick Ge IPLs, and without Ge IPL at a given HfO2 thickness, as well as the devices with varying thicknesses of HfO2 on the optimum Ge IPLs, it is found that both the interface trap and the bulk trap of HfO2 are crucial in affecting the flatband voltage instability characteristics of HfO2 GaAs MOS capacitors. The results indicate that the minimum flatband voltage instability requires a higher quality interface and a thinner HfO2 layer, which can be achieved by employing Ge IPL technique in GaAs system.

AB - This work investigates the flatband voltage instability of HfO2 -based GaAs metal-oxide-semiconductor (MOS) capacitor with a thin germanium (Ge) interfacial passivation layer (IPL). Both positive and negative dc gate biases are used as stress condition. By studying various samples such as the devices with extremely thin equivalent oxide thickness of 8.7 Å, with optimum, thick Ge IPLs, and without Ge IPL at a given HfO2 thickness, as well as the devices with varying thicknesses of HfO2 on the optimum Ge IPLs, it is found that both the interface trap and the bulk trap of HfO2 are crucial in affecting the flatband voltage instability characteristics of HfO2 GaAs MOS capacitors. The results indicate that the minimum flatband voltage instability requires a higher quality interface and a thinner HfO2 layer, which can be achieved by employing Ge IPL technique in GaAs system.

UR - http://www.scopus.com/inward/record.url?scp=40849136453&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40849136453&partnerID=8YFLogxK

U2 - 10.1063/1.2844883

DO - 10.1063/1.2844883

M3 - Article

AN - SCOPUS:40849136453

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 102904

ER -