Atomically thin molybdenum disulfide (MoS2) has been extensively investigated in semiconductor electronics but has not been applied in a backplane circuitry of organic light-emitting diode (OLED) display. Its applicability as an active drive element is hampered by the large contact resistance at the metal/MoS2 interface, which hinders the transport of carriers at the dielectric surface, which in turn considerably deteriorates the mobility. Modified switching device architecture is proposed for efficiently exploiting the high-k dielectric Al2O3 layer, which, when integrated in an active matrix, can drive the ultrathin OLED display even in dynamic folding states. The proposed architecture exhibits 28 times increase in mobility compared to a normal back-gated thin-film transistor, and its potential as a wearable display attached to a human wrist is demonstrated.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF-2015R1A3A2066337). Author contributions: J.-H.A. planned and supervised the project. S.Y.K. co-supervised the project. B.K.S. advised and supported the project. M.C. and Y.J.P. conducted most of the experiments regarding the device fabrication and characterization. S.-R.B. interpreted the data and supported OLED part experiment. All authors analyzed the data and wrote the manuscript. Competing interests: J.-H.A. and Y.J.P. are inventors on a Korean patent application related to this work filed by Yonsei University (10-2017-0055578, 28 April 2017). The authors declare no other competing interests. Data and materials availability: All data needed to evaluate the conclusions in the paper are present in the paper and/or the Supplementary Materials. Additional data related to this paper may be requested from the authors.
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