Flexible active-matrix organic light-emitting diode display enabled by MoS2 thin-film transistor

Minwoo Choi, Yong Ju Park, Bhupendra K. Sharma, Sa Rang Bae, Soo Young Kim, Jong Hyun Ahn

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Atomically thin molybdenum disulfide (MoS2) has been extensively investigated in semiconductor electronics but has not been applied in a backplane circuitry of organic light-emitting diode (OLED) display. Its applicability as an active drive element is hampered by the large contact resistance at the metal/MoS2 interface, which hinders the transport of carriers at the dielectric surface, which in turn considerably deteriorates the mobility. Modified switching device architecture is proposed for efficiently exploiting the high-k dielectric Al2O3 layer, which, when integrated in an active matrix, can drive the ultrathin OLED display even in dynamic folding states. The proposed architecture exhibits 28 times increase in mobility compared to a normal back-gated thin-film transistor, and its potential as a wearable display attached to a human wrist is demonstrated.

Original languageEnglish
Article numbereaas8721
JournalScience Advances
Volume4
Issue number4
DOIs
Publication statusPublished - 2018 Apr 20

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transistors
light emitting diodes
wrist
molybdenum disulfides
matrices
thin films
contact resistance
folding
electronics
metals

All Science Journal Classification (ASJC) codes

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Choi, Minwoo ; Park, Yong Ju ; Sharma, Bhupendra K. ; Bae, Sa Rang ; Kim, Soo Young ; Ahn, Jong Hyun. / Flexible active-matrix organic light-emitting diode display enabled by MoS2 thin-film transistor. In: Science Advances. 2018 ; Vol. 4, No. 4.
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Flexible active-matrix organic light-emitting diode display enabled by MoS2 thin-film transistor. / Choi, Minwoo; Park, Yong Ju; Sharma, Bhupendra K.; Bae, Sa Rang; Kim, Soo Young; Ahn, Jong Hyun.

In: Science Advances, Vol. 4, No. 4, eaas8721, 20.04.2018.

Research output: Contribution to journalArticle

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