Flexible and transparent graphene complementary logic gates

Ajjiporn Dathbun, Seongchan Kim, Sungjoo Lee, Do Kyung Hwang, Jeong Ho Cho

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In this study, flexible and transparent monolithic graphene transistors and complementary logic gates were fabricated using chemically doped graphene. The graphene channel was p- and n-doped with bis-(trifluoromethanesulfonyl)amine and poly(ethylene imine), respectively. Ion gel was utilized to gate the graphene transistor, and this facilitated low-voltage operation and yielded a coplanar-gate geometry. The resulting monolithic graphene transistors exhibited p-type or n-type transport depending on the type of dopant. The p-type and n-type graphene transistors were assembled together to fabricate various logic circuits, e.g., NOT, NAND, and NOR gates. Overall, the selective chemical doping of graphene enabled the realization of complementary logic gates, which represents a significant step in the application of graphene to future two-dimensional-based electronic devices.

Original languageEnglish
Pages (from-to)484-490
Number of pages7
JournalMolecular Systems Design and Engineering
Volume4
Issue number3
DOIs
Publication statusPublished - 2019 Jun

Bibliographical note

Funding Information:
This work was supported by a grant from the Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (2013M3A6A5073177) and the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2017R1A2B2005790 and 2017R1A4A1015400).

Publisher Copyright:
© 2019 The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

  • Chemistry (miscellaneous)
  • Chemical Engineering (miscellaneous)
  • Biomedical Engineering
  • Energy Engineering and Power Technology
  • Process Chemistry and Technology
  • Industrial and Manufacturing Engineering
  • Materials Chemistry

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