Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures

Gwan Hyoung Lee, Young Jun Yu, Xu Cui, Nicholas Petrone, Chul Ho Lee, Min Sup Choi, Dae Yeong Lee, Changgu Lee, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Colin Nuckolls, Philip Kim, James Hone

Research output: Contribution to journalArticle

638 Citations (Scopus)

Abstract

Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility of combining diverse atomic layers by mechanical "stacking" to create novel materials and devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 channels, hBN dielectric, and graphene gate electrodes. These devices show field-effect mobilities of up to 45 cm2/Vs and operating gate voltage below 10 V, with greatly reduced hysteresis. Taking advantage of the mechanical strength and flexibility of these materials, we demonstrate integration onto a polymer substrate to create flexible and transparent FETs that show unchanged performance up to 1.5% strain. These heterostructure devices consisting of ultrathin two-dimensional (2D) materials open up a new route toward high-performance flexible and transparent electronics.

Original languageEnglish
Pages (from-to)7931-7936
Number of pages6
JournalACS Nano
Volume7
Issue number9
DOIs
Publication statusPublished - 2013 Sep 24

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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    Lee, G. H., Yu, Y. J., Cui, X., Petrone, N., Lee, C. H., Choi, M. S., Lee, D. Y., Lee, C., Yoo, W. J., Watanabe, K., Taniguchi, T., Nuckolls, C., Kim, P., & Hone, J. (2013). Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures. ACS Nano, 7(9), 7931-7936. https://doi.org/10.1021/nn402954e