We report on the fabrication of complementary inverters that have ZnO and pentacene as n -type and p -type channels on a polyethersulfone substrate operating under 7 V. Patterned Al and Al Ox thin film were deposited at room temperature on the plastic as a common gate electrode and dielectric, respectively. After initial gate instability between ZnO channel and Al Ox dielectric was controlled, our n -type thin-film transistors (TFTs) displayed quite a similar drain current level to that of p -type TFTs. Our flexible complementary device showed much high voltage gain of ∼100 even under a bent condition (56 mm radius of curvature). Our complementary inverter also demonstrates a promising dynamic behavior of ∼20 ms.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)