Flexible high gain complementary inverter using n-ZnO and p -pentacene channels on polyethersulfone substrate

Min Suk Oh, Wonjun Choi, Kimoon Lee, D. K. Hwang, Seongil Im

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

We report on the fabrication of complementary inverters that have ZnO and pentacene as n -type and p -type channels on a polyethersulfone substrate operating under 7 V. Patterned Al and Al Ox thin film were deposited at room temperature on the plastic as a common gate electrode and dielectric, respectively. After initial gate instability between ZnO channel and Al Ox dielectric was controlled, our n -type thin-film transistors (TFTs) displayed quite a similar drain current level to that of p -type TFTs. Our flexible complementary device showed much high voltage gain of ∼100 even under a bent condition (56 mm radius of curvature). Our complementary inverter also demonstrates a promising dynamic behavior of ∼20 ms.

Original languageEnglish
Article number033510
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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