Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 V

Kwang H. Lee; Kimoon Lee; Min Suk Oh; Jeong M. Choi; Seongil Im; Sungjin Jang; Eugene Kim

doi:10.1016/j.orgel.2008.09.005

Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 V

Kwang H. Lee, Kimoon Lee, Min Suk Oh, Jeong M. Choi, Seongil Im, Sungjin Jang, Eugene Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 230 nm-thick double polymer dielectric composed of 30 nm-thin low-k poly-4-vinyphenol (PVP) and 200 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 230 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of ∼2 MV/cm, a high capacitance of 26 nF/cm² with k = ∼7. Based on this double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.22 cm²/V s, a threshold voltage of -2.5 V, and on/off ratio of 10³, stably operating under -5 V.

Original language	English
Pages (from-to)	194-198
Number of pages	5
Journal	Organic Electronics
Volume	10
Issue number	1
DOIs	https://doi.org/10.1016/j.orgel.2008.09.005
Publication status	Published - 2009 Feb

Bibliographical note

Funding Information:
The authors acknowledge the financial support from LG Display (project year 2005), Brain Korea 21 Project and a grant of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government. One of authors (Kwang H. Lee) acknowledges the support from the KOSFFL fellowship.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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title = "Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 V",

abstract = "We report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 230 nm-thick double polymer dielectric composed of 30 nm-thin low-k poly-4-vinyphenol (PVP) and 200 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 230 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of ∼2 MV/cm, a high capacitance of 26 nF/cm2 with k = ∼7. Based on this double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.22 cm2/V s, a threshold voltage of -2.5 V, and on/off ratio of 103, stably operating under -5 V.",

author = "Lee, {Kwang H.} and Kimoon Lee and Oh, {Min Suk} and Choi, {Jeong M.} and Seongil Im and Sungjin Jang and Eugene Kim",

note = "Funding Information: The authors acknowledge the financial support from LG Display (project year 2005), Brain Korea 21 Project and a grant of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government. One of authors (Kwang H. Lee) acknowledges the support from the KOSFFL fellowship.",

year = "2009",

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doi = "10.1016/j.orgel.2008.09.005",

language = "English",

volume = "10",

pages = "194--198",

journal = "Organic Electronics: physics, materials, applications",

issn = "1566-1199",

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AU - Lee, Kwang H.

AU - Lee, Kimoon

AU - Oh, Min Suk

AU - Choi, Jeong M.

AU - Im, Seongil

AU - Jang, Sungjin

AU - Kim, Eugene

N1 - Funding Information: The authors acknowledge the financial support from LG Display (project year 2005), Brain Korea 21 Project and a grant of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government. One of authors (Kwang H. Lee) acknowledges the support from the KOSFFL fellowship.

PY - 2009/2

Y1 - 2009/2

N2 - We report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 230 nm-thick double polymer dielectric composed of 30 nm-thin low-k poly-4-vinyphenol (PVP) and 200 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 230 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of ∼2 MV/cm, a high capacitance of 26 nF/cm2 with k = ∼7. Based on this double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.22 cm2/V s, a threshold voltage of -2.5 V, and on/off ratio of 103, stably operating under -5 V.

AB - We report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 230 nm-thick double polymer dielectric composed of 30 nm-thin low-k poly-4-vinyphenol (PVP) and 200 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 230 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of ∼2 MV/cm, a high capacitance of 26 nF/cm2 with k = ∼7. Based on this double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.22 cm2/V s, a threshold voltage of -2.5 V, and on/off ratio of 103, stably operating under -5 V.

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