Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 V

Kwang H. Lee, Kimoon Lee, Min Suk Oh, Jeong M. Choi, Seongil Im, Sungjin Jang, Eugene Kim

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

We report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 230 nm-thick double polymer dielectric composed of 30 nm-thin low-k poly-4-vinyphenol (PVP) and 200 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 230 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of ∼2 MV/cm, a high capacitance of 26 nF/cm2 with k = ∼7. Based on this double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.22 cm2/V s, a threshold voltage of -2.5 V, and on/off ratio of 103, stably operating under -5 V.

Original languageEnglish
Pages (from-to)194-198
Number of pages5
JournalOrganic Electronics
Volume10
Issue number1
DOIs
Publication statusPublished - 2009 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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