Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 V

Kwang H. Lee; Kimoon Lee; Min Suk Oh; Jeong M. Choi; Seongil Im; Sungjin Jang; Eugene Kim

doi:10.1016/j.orgel.2008.09.005

Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 V

Kwang H. Lee, Kimoon Lee, Min Suk Oh, Jeong M. Choi, Seongil Im, Sungjin Jang, Eugene Kim

Department of Physics

Research output: Contribution to journal › Article

35 Citations (Scopus)

Abstract

We report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 230 nm-thick double polymer dielectric composed of 30 nm-thin low-k poly-4-vinyphenol (PVP) and 200 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 230 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of ∼2 MV/cm, a high capacitance of 26 nF/cm² with k = ∼7. Based on this double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.22 cm²/V s, a threshold voltage of -2.5 V, and on/off ratio of 10³, stably operating under -5 V.

Original language	English
Pages (from-to)	194-198
Number of pages	5
Journal	Organic Electronics
Volume	10
Issue number	1
DOIs	https://doi.org/10.1016/j.orgel.2008.09.005
Publication status	Published - 2009 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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Lee, K. H., Lee, K., Oh, M. S., Choi, J. M., Im, S., Jang, S., & Kim, E. (2009). Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 V. Organic Electronics, 10(1), 194-198. https://doi.org/10.1016/j.orgel.2008.09.005

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title = "Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 V",

abstract = "We report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 230 nm-thick double polymer dielectric composed of 30 nm-thin low-k poly-4-vinyphenol (PVP) and 200 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 230 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of ∼2 MV/cm, a high capacitance of 26 nF/cm2 with k = ∼7. Based on this double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.22 cm2/V s, a threshold voltage of -2.5 V, and on/off ratio of 103, stably operating under -5 V.",

author = "Lee, {Kwang H.} and Kimoon Lee and Oh, {Min Suk} and Choi, {Jeong M.} and Seongil Im and Sungjin Jang and Eugene Kim",

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AU - Lee, Kwang H.

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AU - Oh, Min Suk

AU - Choi, Jeong M.

AU - Im, Seongil

AU - Jang, Sungjin

AU - Kim, Eugene

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AB - We report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 230 nm-thick double polymer dielectric composed of 30 nm-thin low-k poly-4-vinyphenol (PVP) and 200 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 230 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of ∼2 MV/cm, a high capacitance of 26 nF/cm2 with k = ∼7. Based on this double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.22 cm2/V s, a threshold voltage of -2.5 V, and on/off ratio of 103, stably operating under -5 V.

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