We report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 230 nm-thick double polymer dielectric composed of 30 nm-thin low-k poly-4-vinyphenol (PVP) and 200 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 230 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of ∼2 MV/cm, a high capacitance of 26 nF/cm2 with k = ∼7. Based on this double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.22 cm2/V s, a threshold voltage of -2.5 V, and on/off ratio of 103, stably operating under -5 V.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from LG Display (project year 2005), Brain Korea 21 Project and a grant of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government. One of authors (Kwang H. Lee) acknowledges the support from the KOSFFL fellowship.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering