We report on the fabrication of pentacene-based thin-film transistors (TFTs) with double polymer dielectric composed of 30 / 45 nm-thin low-k poly-4-vinyphenol (PVP) and 110 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 140 and 155 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of 1 and 1.5 MV/cm, a high capacitance of 31 ∼ 34 and 27 nF/cm2 with k = ∼ 5, respectively. Based on 140 and 155 nm-thick double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.39 and 1.23 cm2/V s, a threshold voltage of-2.3 and -2.0 V, respectively, and on/off ratio of 103, stably operating under -5 V.
|Title of host publication||ECS Transactions - Thin Film Transistors 9, TFT 9|
|Number of pages||9|
|Publication status||Published - 2008|
|Event||Thin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States|
Duration: 2008 Oct 13 → 2008 Oct 16
|Other||Thin Film Transistors 9, TFT 9 - 214th ECS Meeting|
|Period||08/10/13 → 08/10/16|
Bibliographical noteFunding Information:
The authors acknowledge the financial support from LG Display (project year 2005), Brain Korea 21 Project and a grant of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government. One of authors (Kwang H. Lee) acknowledges the support from the KOSFFL fellowship.
All Science Journal Classification (ASJC) codes