Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v

Kwang H. Lee; Kimoon Lee; Gyubaek Lee; Min Suk Oh; Jeong M. Choi; Seongil Im; Sungjin Jang; Eugene Kim

doi:10.1149/1.2980558

Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v

Kwang H. Lee, Kimoon Lee, Gyubaek Lee, Min Suk Oh, Jeong M. Choi, Seongil Im, Sungjin Jang, Eugene Kim

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the fabrication of pentacene-based thin-film transistors (TFTs) with double polymer dielectric composed of 30 / 45 nm-thin low-k poly-4-vinyphenol (PVP) and 110 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 140 and 155 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of 1 and 1.5 MV/cm, a high capacitance of 31 ∼ 34 and 27 nF/cm² with k = ∼ 5, respectively. Based on 140 and 155 nm-thick double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.39 and 1.23 cm²/V s, a threshold voltage of-2.3 and -2.0 V, respectively, and on/off ratio of 10³, stably operating under -5 V.

Original language	English
Title of host publication	ECS Transactions - Thin Film Transistors 9, TFT 9
Pages	239-247
Number of pages	9
Edition	9
DOIs	https://doi.org/10.1149/1.2980558
Publication status	Published - 2008 Dec 1
Event	Thin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States Duration: 2008 Oct 13 → 2008 Oct 16

Publication series

Name	ECS Transactions
Number	9
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Thin Film Transistors 9, TFT 9 - 214th ECS Meeting
Country	United States
City	Honolulu, HI
Period	08/10/13 → 08/10/16

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All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Lee, K. H., Lee, K., Lee, G., Oh, M. S., Choi, J. M., Im, S., Jang, S., & Kim, E. (2008). Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v. In ECS Transactions - Thin Film Transistors 9, TFT 9 (9 ed., pp. 239-247). (ECS Transactions; Vol. 16, No. 9). https://doi.org/10.1149/1.2980558

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title = "Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v",

abstract = "We report on the fabrication of pentacene-based thin-film transistors (TFTs) with double polymer dielectric composed of 30 / 45 nm-thin low-k poly-4-vinyphenol (PVP) and 110 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 140 and 155 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of 1 and 1.5 MV/cm, a high capacitance of 31 ∼ 34 and 27 nF/cm2 with k = ∼ 5, respectively. Based on 140 and 155 nm-thick double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.39 and 1.23 cm2/V s, a threshold voltage of-2.3 and -2.0 V, respectively, and on/off ratio of 103, stably operating under -5 V.",

author = "Lee, {Kwang H.} and Kimoon Lee and Gyubaek Lee and Oh, {Min Suk} and Choi, {Jeong M.} and Seongil Im and Sungjin Jang and Eugene Kim",

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Lee, KH, Lee, K, Lee, G, Oh, MS, Choi, JM, Im, S, Jang, S & Kim, E 2008, Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v. in ECS Transactions - Thin Film Transistors 9, TFT 9. 9 edn, ECS Transactions, no. 9, vol. 16, pp. 239-247, Thin Film Transistors 9, TFT 9 - 214th ECS Meeting, Honolulu, HI, United States, 08/10/13. https://doi.org/10.1149/1.2980558

Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v. / Lee, Kwang H.; Lee, Kimoon; Lee, Gyubaek; Oh, Min Suk; Choi, Jeong M.; Im, Seongil; Jang, Sungjin; Kim, Eugene.

ECS Transactions - Thin Film Transistors 9, TFT 9. 9. ed. 2008. p. 239-247 (ECS Transactions; Vol. 16, No. 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Oh, Min Suk

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AU - Im, Seongil

AU - Jang, Sungjin

AU - Kim, Eugene

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N2 - We report on the fabrication of pentacene-based thin-film transistors (TFTs) with double polymer dielectric composed of 30 / 45 nm-thin low-k poly-4-vinyphenol (PVP) and 110 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 140 and 155 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of 1 and 1.5 MV/cm, a high capacitance of 31 ∼ 34 and 27 nF/cm2 with k = ∼ 5, respectively. Based on 140 and 155 nm-thick double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.39 and 1.23 cm2/V s, a threshold voltage of-2.3 and -2.0 V, respectively, and on/off ratio of 103, stably operating under -5 V.

AB - We report on the fabrication of pentacene-based thin-film transistors (TFTs) with double polymer dielectric composed of 30 / 45 nm-thin low-k poly-4-vinyphenol (PVP) and 110 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 140 and 155 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of 1 and 1.5 MV/cm, a high capacitance of 31 ∼ 34 and 27 nF/cm2 with k = ∼ 5, respectively. Based on 140 and 155 nm-thick double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.39 and 1.23 cm2/V s, a threshold voltage of-2.3 and -2.0 V, respectively, and on/off ratio of 103, stably operating under -5 V.

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Access to Document

10.1149/1.2980558