Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v

Kwang H. Lee, Kimoon Lee, Gyubaek Lee, Min Suk Oh, Jeong M. Choi, Seongil Im, Sungjin Jang, Eugene Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the fabrication of pentacene-based thin-film transistors (TFTs) with double polymer dielectric composed of 30 / 45 nm-thin low-k poly-4-vinyphenol (PVP) and 110 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 140 and 155 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of 1 and 1.5 MV/cm, a high capacitance of 31 ∼ 34 and 27 nF/cm2 with k = ∼ 5, respectively. Based on 140 and 155 nm-thick double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.39 and 1.23 cm2/V s, a threshold voltage of-2.3 and -2.0 V, respectively, and on/off ratio of 103, stably operating under -5 V.

Original languageEnglish
Title of host publicationECS Transactions - Thin Film Transistors 9, TFT 9
Pages239-247
Number of pages9
Edition9
DOIs
Publication statusPublished - 2008
EventThin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 16

Publication series

NameECS Transactions
Number9
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherThin Film Transistors 9, TFT 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1308/10/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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