Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v

Kwang H. Lee; Kimoon Lee; Gyubaek Lee; Min Suk Oh; Jeong M. Choi; Seongil Im; Sungjin Jang; Eugene Kim

doi:10.1149/1.2980558

Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v

Kwang H. Lee, Kimoon Lee, Gyubaek Lee, Min Suk Oh, Jeong M. Choi, Seongil Im, Sungjin Jang, Eugene Kim

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the fabrication of pentacene-based thin-film transistors (TFTs) with double polymer dielectric composed of 30 / 45 nm-thin low-k poly-4-vinyphenol (PVP) and 110 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 140 and 155 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of 1 and 1.5 MV/cm, a high capacitance of 31 ∼ 34 and 27 nF/cm² with k = ∼ 5, respectively. Based on 140 and 155 nm-thick double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.39 and 1.23 cm²/V s, a threshold voltage of-2.3 and -2.0 V, respectively, and on/off ratio of 10³, stably operating under -5 V.

Original language	English
Title of host publication	ECS Transactions - Thin Film Transistors 9, TFT 9
Publisher	Electrochemical Society Inc.
Pages	239-247
Number of pages	9
Edition	9
ISBN (Print)	9781566776554
DOIs	https://doi.org/10.1149/1.2980558
Publication status	Published - 2009
Event	Thin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States Duration: 2008 Oct 13 → 2008 Oct 16

Publication series

Name	ECS Transactions
Number	9
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Thin Film Transistors 9, TFT 9 - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	08/10/13 → 08/10/16

Bibliographical note

Funding Information:
The authors acknowledge the financial support from LG Display (project year 2005), Brain Korea 21 Project and a grant of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government. One of authors (Kwang H. Lee) acknowledges the support from the KOSFFL fellowship.

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/1.2980558

Cite this

Lee, K. H., Lee, K., Lee, G., Oh, M. S., Choi, J. M., Im, S., Jang, S., & Kim, E. (2009). Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v. In ECS Transactions - Thin Film Transistors 9, TFT 9 (9 ed., pp. 239-247). (ECS Transactions; Vol. 16, No. 9). Electrochemical Society Inc.. https://doi.org/10.1149/1.2980558

@inproceedings{a7d57dbdee054e94993863a1c02af2ce,

title = "Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v",

abstract = "We report on the fabrication of pentacene-based thin-film transistors (TFTs) with double polymer dielectric composed of 30 / 45 nm-thin low-k poly-4-vinyphenol (PVP) and 110 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 140 and 155 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of 1 and 1.5 MV/cm, a high capacitance of 31 ∼ 34 and 27 nF/cm2 with k = ∼ 5, respectively. Based on 140 and 155 nm-thick double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.39 and 1.23 cm2/V s, a threshold voltage of-2.3 and -2.0 V, respectively, and on/off ratio of 103, stably operating under -5 V.",

author = "Lee, {Kwang H.} and Kimoon Lee and Gyubaek Lee and Oh, {Min Suk} and Choi, {Jeong M.} and Seongil Im and Sungjin Jang and Eugene Kim",

note = "Funding Information: The authors acknowledge the financial support from LG Display (project year 2005), Brain Korea 21 Project and a grant of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government. One of authors (Kwang H. Lee) acknowledges the support from the KOSFFL fellowship.; Thin Film Transistors 9, TFT 9 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 16-10-2008",

year = "2009",

doi = "10.1149/1.2980558",

language = "English",

isbn = "9781566776554",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "9",

pages = "239--247",

booktitle = "ECS Transactions - Thin Film Transistors 9, TFT 9",

edition = "9",

}

Lee, KH, Lee, K, Lee, G, Oh, MS, Choi, JM, Im, S, Jang, S & Kim, E 2009, Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v. in ECS Transactions - Thin Film Transistors 9, TFT 9. 9 edn, ECS Transactions, no. 9, vol. 16, Electrochemical Society Inc., pp. 239-247, Thin Film Transistors 9, TFT 9 - 214th ECS Meeting, Honolulu, HI, United States, 08/10/13. https://doi.org/10.1149/1.2980558

Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v. / Lee, Kwang H.; Lee, Kimoon; Lee, Gyubaek; Oh, Min Suk; Choi, Jeong M.; Im, Seongil; Jang, Sungjin; Kim, Eugene.

ECS Transactions - Thin Film Transistors 9, TFT 9. 9. ed. Electrochemical Society Inc., 2009. p. 239-247 (ECS Transactions; Vol. 16, No. 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v

AU - Lee, Kwang H.

AU - Lee, Kimoon

AU - Lee, Gyubaek

AU - Oh, Min Suk

AU - Choi, Jeong M.

AU - Im, Seongil

AU - Jang, Sungjin

AU - Kim, Eugene

N1 - Funding Information: The authors acknowledge the financial support from LG Display (project year 2005), Brain Korea 21 Project and a grant of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government. One of authors (Kwang H. Lee) acknowledges the support from the KOSFFL fellowship.

PY - 2009

Y1 - 2009

N2 - We report on the fabrication of pentacene-based thin-film transistors (TFTs) with double polymer dielectric composed of 30 / 45 nm-thin low-k poly-4-vinyphenol (PVP) and 110 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 140 and 155 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of 1 and 1.5 MV/cm, a high capacitance of 31 ∼ 34 and 27 nF/cm2 with k = ∼ 5, respectively. Based on 140 and 155 nm-thick double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.39 and 1.23 cm2/V s, a threshold voltage of-2.3 and -2.0 V, respectively, and on/off ratio of 103, stably operating under -5 V.

AB - We report on the fabrication of pentacene-based thin-film transistors (TFTs) with double polymer dielectric composed of 30 / 45 nm-thin low-k poly-4-vinyphenol (PVP) and 110 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 140 and 155 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of 1 and 1.5 MV/cm, a high capacitance of 31 ∼ 34 and 27 nF/cm2 with k = ∼ 5, respectively. Based on 140 and 155 nm-thick double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.39 and 1.23 cm2/V s, a threshold voltage of-2.3 and -2.0 V, respectively, and on/off ratio of 103, stably operating under -5 V.

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U2 - 10.1149/1.2980558

DO - 10.1149/1.2980558

M3 - Conference contribution

AN - SCOPUS:63149123727

SN - 9781566776554

T3 - ECS Transactions

SP - 239

EP - 247

BT - ECS Transactions - Thin Film Transistors 9, TFT 9

PB - Electrochemical Society Inc.

T2 - Thin Film Transistors 9, TFT 9 - 214th ECS Meeting

Y2 - 13 October 2008 through 16 October 2008

ER -

Flexible high mobility pentacene transistor with high-k/low-k double polymer dielectric layer operating at -5 v

Abstract

Publication series

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Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

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