Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer

Kwang H. Lee; Gyubaek Lee; Kimoon Lee; Min Suk Oh; Seongil Im

doi:10.1063/1.3089379

Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer

Kwang H. Lee, Gyubaek Lee, Kimoon Lee, Min Suk Oh, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

98 Citations (Scopus)

Abstract

We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/ trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of ±13∼±20 V with field effect mobilities of 0.1-0.18 cm² /V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (ΔV) of 2.5-8 V and also exhibits WR-ER current ratio of 20-40. The retention properties persist over ∼10 000 s and the dynamic response for WR-ER pulses demonstrates clear distinction of WR-ER states under the short switching pulse of 50 ms.

Original language	English
Article number	093304
Journal	Applied Physics Letters
Volume	94
Issue number	9
DOIs	https://doi.org/10.1063/1.3089379
Publication status	Published - 2009

Bibliographical note

Funding Information:
The authors acknowledge the financial support from Brain Korea 21 Project and a grant (Grant No. F0004022-2008-31) of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government (MKEK). One of authors (K.H.L.) acknowledges the support from the Korean Scholarship Foundation for the Future Leaders (KOSFFL).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3089379

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title = "Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer",

abstract = "We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/ trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of ±13∼±20 V with field effect mobilities of 0.1-0.18 cm2 /V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (ΔV) of 2.5-8 V and also exhibits WR-ER current ratio of 20-40. The retention properties persist over ∼10 000 s and the dynamic response for WR-ER pulses demonstrates clear distinction of WR-ER states under the short switching pulse of 50 ms.",

author = "Lee, {Kwang H.} and Gyubaek Lee and Kimoon Lee and Oh, {Min Suk} and Seongil Im",

note = "Funding Information: The authors acknowledge the financial support from Brain Korea 21 Project and a grant (Grant No. F0004022-2008-31) of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government (MKEK). One of authors (K.H.L.) acknowledges the support from the Korean Scholarship Foundation for the Future Leaders (KOSFFL).",

year = "2009",

doi = "10.1063/1.3089379",

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journal = "Applied Physics Letters",

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AU - Lee, Kwang H.

AU - Lee, Gyubaek

AU - Lee, Kimoon

AU - Oh, Min Suk

AU - Im, Seongil

N1 - Funding Information: The authors acknowledge the financial support from Brain Korea 21 Project and a grant (Grant No. F0004022-2008-31) of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government (MKEK). One of authors (K.H.L.) acknowledges the support from the Korean Scholarship Foundation for the Future Leaders (KOSFFL).

PY - 2009

Y1 - 2009

N2 - We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/ trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of ±13∼±20 V with field effect mobilities of 0.1-0.18 cm2 /V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (ΔV) of 2.5-8 V and also exhibits WR-ER current ratio of 20-40. The retention properties persist over ∼10 000 s and the dynamic response for WR-ER pulses demonstrates clear distinction of WR-ER states under the short switching pulse of 50 ms.

AB - We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/ trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of ±13∼±20 V with field effect mobilities of 0.1-0.18 cm2 /V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (ΔV) of 2.5-8 V and also exhibits WR-ER current ratio of 20-40. The retention properties persist over ∼10 000 s and the dynamic response for WR-ER pulses demonstrates clear distinction of WR-ER states under the short switching pulse of 50 ms.

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Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer

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Bibliographical note

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