We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/ trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of ±13∼±20 V with field effect mobilities of 0.1-0.18 cm2 /V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (ΔV) of 2.5-8 V and also exhibits WR-ER current ratio of 20-40. The retention properties persist over ∼10 000 s and the dynamic response for WR-ER pulses demonstrates clear distinction of WR-ER states under the short switching pulse of 50 ms.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)