Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer

Kwang H. Lee, Gyubaek Lee, Kimoon Lee, Min Suk Oh, Seongil Im

Research output: Contribution to journalArticle

88 Citations (Scopus)

Abstract

We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/ trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of ±13∼±20 V with field effect mobilities of 0.1-0.18 cm2 /V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (ΔV) of 2.5-8 V and also exhibits WR-ER current ratio of 20-40. The retention properties persist over ∼10 000 s and the dynamic response for WR-ER pulses demonstrates clear distinction of WR-ER states under the short switching pulse of 50 ms.

Original languageEnglish
Article number093304
JournalApplied Physics Letters
Volume94
Issue number9
DOIs
Publication statusPublished - 2009 Mar 18

Fingerprint

low voltage
transistors
polymers
thin films
pulses
vinylidene
dynamic response
fluorides
insulators
fabrication

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{fe198d14673d4bf789389f9eeb947562,
title = "Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer",
abstract = "We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/ trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of ±13∼±20 V with field effect mobilities of 0.1-0.18 cm2 /V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (ΔV) of 2.5-8 V and also exhibits WR-ER current ratio of 20-40. The retention properties persist over ∼10 000 s and the dynamic response for WR-ER pulses demonstrates clear distinction of WR-ER states under the short switching pulse of 50 ms.",
author = "Lee, {Kwang H.} and Gyubaek Lee and Kimoon Lee and Oh, {Min Suk} and Seongil Im",
year = "2009",
month = "3",
day = "18",
doi = "10.1063/1.3089379",
language = "English",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer. / Lee, Kwang H.; Lee, Gyubaek; Lee, Kimoon; Oh, Min Suk; Im, Seongil.

In: Applied Physics Letters, Vol. 94, No. 9, 093304, 18.03.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer

AU - Lee, Kwang H.

AU - Lee, Gyubaek

AU - Lee, Kimoon

AU - Oh, Min Suk

AU - Im, Seongil

PY - 2009/3/18

Y1 - 2009/3/18

N2 - We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/ trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of ±13∼±20 V with field effect mobilities of 0.1-0.18 cm2 /V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (ΔV) of 2.5-8 V and also exhibits WR-ER current ratio of 20-40. The retention properties persist over ∼10 000 s and the dynamic response for WR-ER pulses demonstrates clear distinction of WR-ER states under the short switching pulse of 50 ms.

AB - We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/ trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of ±13∼±20 V with field effect mobilities of 0.1-0.18 cm2 /V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (ΔV) of 2.5-8 V and also exhibits WR-ER current ratio of 20-40. The retention properties persist over ∼10 000 s and the dynamic response for WR-ER pulses demonstrates clear distinction of WR-ER states under the short switching pulse of 50 ms.

UR - http://www.scopus.com/inward/record.url?scp=62149140097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62149140097&partnerID=8YFLogxK

U2 - 10.1063/1.3089379

DO - 10.1063/1.3089379

M3 - Article

AN - SCOPUS:62149140097

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 093304

ER -