We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/ trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of ±13∼±20 V with field effect mobilities of 0.1-0.18 cm2 /V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (ΔV) of 2.5-8 V and also exhibits WR-ER current ratio of 20-40. The retention properties persist over ∼10 000 s and the dynamic response for WR-ER pulses demonstrates clear distinction of WR-ER states under the short switching pulse of 50 ms.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from Brain Korea 21 Project and a grant (Grant No. F0004022-2008-31) of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government (MKEK). One of authors (K.H.L.) acknowledges the support from the Korean Scholarship Foundation for the Future Leaders (KOSFFL).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)