Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation

Sun Kak Hwang, Insung Bae, Richard Hahnkee Kim, Cheolmin Park

Research output: Contribution to journalArticle

113 Citations (Scopus)


A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.

Original languageEnglish
Pages (from-to)5910-5914
Number of pages5
JournalAdvanced Materials
Issue number44
Publication statusPublished - 2012 Nov 20


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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