Flexible semitransparent pentacene thin-film transistors with polymer dielectric layers and Ni Ox electrodes

Jiyoul Lee; D. K. Hwang; Jeong M. Choi; Kimoon Lee; Jae Hoon Kim; Seongil Im; Ji Hoon Park; Eugene Kim

doi:10.1063/1.1996839

Flexible semitransparent pentacene thin-film transistors with polymer dielectric layers and Ni Ox electrodes

Jiyoul Lee, D. K. Hwang, Jeong M. Choi, Kimoon Lee, Jae Hoon Kim, Seongil Im, Ji Hoon Park, Eugene Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

We have fabricated the flexible semitransparent pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP) dielectric layers which were deposited by spin coating on a thermostable plastic substrate with a conductive film. For the sourcedrain (SD) electrodes of our flexible pentacene TFTs both Au and semitransparent Ni Ox have been tested. It was found that Ni Ox was better matched to the pentacene channel for the SD contacts than Au. Our flexible pentacene TFTs with semitransparent Ni Ox contacts exhibited mobility of ∼0.24 cm2 V s higher than that achieved with Au contacts (∼0.14 cm2 V s) and also demonstrated a higher initial drain current.

Original language	English
Article number	023504
Journal	Applied Physics Letters
Volume	87
Issue number	2
DOIs	https://doi.org/10.1063/1.1996839
Publication status	Published - 2005 Jul 11

Bibliographical note

Funding Information:
The authors acknowledge the financial support from KISTEP (Program No. M1-0214-00-0228) and the BK 21 Program. J.H.K. acknowledges the support from Yonsei University (Fund No. 1999-1-0029) and eSSC at Postech funded by MOST.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1996839

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title = "Flexible semitransparent pentacene thin-film transistors with polymer dielectric layers and Ni Ox electrodes",

abstract = "We have fabricated the flexible semitransparent pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP) dielectric layers which were deposited by spin coating on a thermostable plastic substrate with a conductive film. For the sourcedrain (SD) electrodes of our flexible pentacene TFTs both Au and semitransparent Ni Ox have been tested. It was found that Ni Ox was better matched to the pentacene channel for the SD contacts than Au. Our flexible pentacene TFTs with semitransparent Ni Ox contacts exhibited mobility of ∼0.24 cm2 V s higher than that achieved with Au contacts (∼0.14 cm2 V s) and also demonstrated a higher initial drain current.",

author = "Jiyoul Lee and Hwang, {D. K.} and Choi, {Jeong M.} and Kimoon Lee and Kim, {Jae Hoon} and Seongil Im and Park, {Ji Hoon} and Eugene Kim",

note = "Funding Information: The authors acknowledge the financial support from KISTEP (Program No. M1-0214-00-0228) and the BK 21 Program. J.H.K. acknowledges the support from Yonsei University (Fund No. 1999-1-0029) and eSSC at Postech funded by MOST. ",

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AU - Lee, Jiyoul

AU - Hwang, D. K.

AU - Choi, Jeong M.

AU - Lee, Kimoon

AU - Kim, Jae Hoon

AU - Im, Seongil

AU - Park, Ji Hoon

AU - Kim, Eugene

N1 - Funding Information: The authors acknowledge the financial support from KISTEP (Program No. M1-0214-00-0228) and the BK 21 Program. J.H.K. acknowledges the support from Yonsei University (Fund No. 1999-1-0029) and eSSC at Postech funded by MOST.

PY - 2005/7/11

Y1 - 2005/7/11

N2 - We have fabricated the flexible semitransparent pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP) dielectric layers which were deposited by spin coating on a thermostable plastic substrate with a conductive film. For the sourcedrain (SD) electrodes of our flexible pentacene TFTs both Au and semitransparent Ni Ox have been tested. It was found that Ni Ox was better matched to the pentacene channel for the SD contacts than Au. Our flexible pentacene TFTs with semitransparent Ni Ox contacts exhibited mobility of ∼0.24 cm2 V s higher than that achieved with Au contacts (∼0.14 cm2 V s) and also demonstrated a higher initial drain current.

AB - We have fabricated the flexible semitransparent pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP) dielectric layers which were deposited by spin coating on a thermostable plastic substrate with a conductive film. For the sourcedrain (SD) electrodes of our flexible pentacene TFTs both Au and semitransparent Ni Ox have been tested. It was found that Ni Ox was better matched to the pentacene channel for the SD contacts than Au. Our flexible pentacene TFTs with semitransparent Ni Ox contacts exhibited mobility of ∼0.24 cm2 V s higher than that achieved with Au contacts (∼0.14 cm2 V s) and also demonstrated a higher initial drain current.

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Flexible semitransparent pentacene thin-film transistors with polymer dielectric layers and Ni Ox electrodes

Abstract

Bibliographical note

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