Fluorine as a shallow acceptor in ZnSe

E. D. Sim, Y. S. Joh, S. I. Min, C. D. Lee, S. K. Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Fluorine-doped ZnSe epilayers were grown by metalorganic atomic layer epitaxy using a selective doping method and were characterized by photoluminescence spectroscopy. The photoluminescence spectrum of the fluorine-doped ZnSe epilayer exhibits two emission peaks when fluorine is supplied onto the Zn surface. The origin of these emission peaks is suggested to be due to the excitons bound to neutral fluorine atoms and the donor-to-fluorine acceptor emission. This is confirmed through the change in the energy positions of the emission peaks with the excitation intensity. These results suggest that fluorine is incorporated as an acceptor with an energy level of about 90 meV.

Original languageEnglish
Pages (from-to)185-190
Number of pages6
JournalJournal of Crystal Growth
Volume177
Issue number3-4
DOIs
Publication statusPublished - 1997 Jun

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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