Fluorous-inorganic hybrid dielectric materials for solution-processed electronic devices

Heejin Kim, Sang Ho Jo, Joong Hwi Jee, Woo Je Han, Youngtae Kim, Hyung Ho Park, Hyoung Joon Jin, Byungwook Yoo, Jin Kyun Lee

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report the synthesis and characterisation of fluorous-inorganic hybrid dielectric (FIHD) materials processable in highly fluorinated orthogonal solvents for printed electronic devices. FIHD materials were prepared successfully via ligand exchange reactions between organic ligands on the surfaces of nanomaterials and highly fluorinated carboxylic acids. When hafnium oxide (HfO2) or zirconium oxide (ZrO2) nanoparticles stabilized with trioctylphosphine oxide (TOPO) were treated with perfluoro-3,6,9-trioxatridecanoic acid in HFE-7500 at 130°C, the modified surface characteristics of the nanoparticles resulted in excellent solubilities in the fluorous solvent. The dielectric constant of HfO2 and ZrO2 nanoparticles modified with fluorous acid was ca. 4.4 and 4.3 at 1 KHz, respectively, which is significantly higher than that of fluoropolymers. Top-gate organic thin film transistors (OTFTs) were fabricated using solution-processed organic semiconductors and HfO2-based FIHD materials. The hole mobilities of the OTFTs produced were as high as 0.08 cm2 V-1 s-1 (Vds = -40 V) and the on/off ratio reached 3.3 × 106 when 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TESADT) was employed as the semiconductor layer. These device performances demonstrate that FIHD materials can be useful components for general printed electronic devices processed with soluble organic electronic materials.

Original languageEnglish
Pages (from-to)836-842
Number of pages7
JournalNew Journal of Chemistry
Volume39
Issue number2
DOIs
Publication statusPublished - 2015 Feb 1

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Hybrid materials
Thin film transistors
Nanoparticles
Ligands
Hafnium oxides
Fluorine containing polymers
Hole mobility
Acids
Semiconducting organic compounds
Carboxylic Acids
Carboxylic acids
Nanostructured materials
Zirconia
Permittivity
Solubility
Semiconductor materials
Oxides

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Materials Chemistry

Cite this

Kim, Heejin ; Jo, Sang Ho ; Jee, Joong Hwi ; Han, Woo Je ; Kim, Youngtae ; Park, Hyung Ho ; Jin, Hyoung Joon ; Yoo, Byungwook ; Lee, Jin Kyun. / Fluorous-inorganic hybrid dielectric materials for solution-processed electronic devices. In: New Journal of Chemistry. 2015 ; Vol. 39, No. 2. pp. 836-842.
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Kim, H, Jo, SH, Jee, JH, Han, WJ, Kim, Y, Park, HH, Jin, HJ, Yoo, B & Lee, JK 2015, 'Fluorous-inorganic hybrid dielectric materials for solution-processed electronic devices', New Journal of Chemistry, vol. 39, no. 2, pp. 836-842. https://doi.org/10.1039/c4nj01435a

Fluorous-inorganic hybrid dielectric materials for solution-processed electronic devices. / Kim, Heejin; Jo, Sang Ho; Jee, Joong Hwi; Han, Woo Je; Kim, Youngtae; Park, Hyung Ho; Jin, Hyoung Joon; Yoo, Byungwook; Lee, Jin Kyun.

In: New Journal of Chemistry, Vol. 39, No. 2, 01.02.2015, p. 836-842.

Research output: Contribution to journalArticle

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AU - Jo, Sang Ho

AU - Jee, Joong Hwi

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