We report on the ultra-shallow p+-n junction formation by decaborane (B10H14) ion implantation into n-Si(1 0 0) substrates. The implantation energies of 5, 10 and 15 keV were used with the doses of 1 × 1012 and 1 × 1013 cm-2. The implanted samples were then subject to activation-annealing at 800, 900 and 1000 °C for 10 s. According to the results of secondary ion mass spectrometry, the p+ layer thinner than 50 nm formed in most of the samples. Current-voltage (I-V) measurements performed on the p+-n junction exhibited that the minimum leakage current density at -5 V was ∼ 10-6 A/cm2 when the decaborane of 1 × 1013 cm-2 was implanted, while the maximum activated carrier dose of p+ layers was measured up to 8.1 × 1013 cm-2 by Hall measurements.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 2003 May|
|Event||13th International conference on Ion beam modification of Mate - Kobe, Japan|
Duration: 2002 Sep 1 → 2002 Sep 6
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics