Formation and characterizations of ultra-shallow p⁺-n junctions using B₁₀H₁₄ ion implantation

We report on the ultra-shallow p⁺-n junction formation by decaborane (B₁₀H₁₄) ion implantation into n-Si(1 0 0) substrates. The implantation energies of 5, 10 and 15 keV were used with the doses of 1 × 10¹² and 1 × 10¹³ cm^-2. The implanted samples were then subject to activation-annealing at 800, 900 and 1000 °C for 10 s. According to the results of secondary ion mass spectrometry, the p⁺ layer thinner than 50 nm formed in most of the samples. Current-voltage (I-V) measurements performed on the p⁺-n junction exhibited that the minimum leakage current density at -5 V was ∼ 10^-6 A/cm² when the decaborane of 1 × 10¹³ cm^-2 was implanted, while the maximum activated carrier dose of p⁺ layers was measured up to 8.1 × 10¹³ cm^-2 by Hall measurements.