Abstract
Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi2|(220)Si, [123]TiSi2|[112]Si, (311)TiSi2|(002)Si, [136] TiSi2|[110]Si and (022)TiSi2|(200)Si, [233]TiSi2|[011]Si with misorientations of 6°, 2° and 14.74°, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 579-588 |
| Number of pages | 10 |
| Journal | Journal of Crystal Growth |
| Volume | 115 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1991 Dec 2 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Formation and epitaxial growth of titanium-disilicide on Si (111). / Choi, Chi Kyu; Park, Hyung-Ho; Lee, Jeong Yong; Cho, Kyoung Ik; Paek, Mun Cheol; Kwon, Oh Joon; Kim, Kun Ho; Yang, Soo Jeong.
In: Journal of Crystal Growth, Vol. 115, No. 1-4, 02.12.1991, p. 579-588.Research output: Contribution to journal › Article
TY - JOUR
T1 - Formation and epitaxial growth of titanium-disilicide on Si (111)
AU - Choi, Chi Kyu
AU - Park, Hyung-Ho
AU - Lee, Jeong Yong
AU - Cho, Kyoung Ik
AU - Paek, Mun Cheol
AU - Kwon, Oh Joon
AU - Kim, Kun Ho
AU - Yang, Soo Jeong
PY - 1991/12/2
Y1 - 1991/12/2
N2 - Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi2|(220)Si, [123]TiSi2|[112]Si, (311)TiSi2|(002)Si, [136] TiSi2|[110]Si and (022)TiSi2|(200)Si, [233]TiSi2|[011]Si with misorientations of 6°, 2° and 14.74°, respectively.
AB - Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi2|(220)Si, [123]TiSi2|[112]Si, (311)TiSi2|(002)Si, [136] TiSi2|[110]Si and (022)TiSi2|(200)Si, [233]TiSi2|[011]Si with misorientations of 6°, 2° and 14.74°, respectively.
UR - http://www.scopus.com/inward/record.url?scp=0026414742&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026414742&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(91)90808-I
DO - 10.1016/0022-0248(91)90808-I
M3 - Article
AN - SCOPUS:0026414742
VL - 115
SP - 579
EP - 588
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -