Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi2|(220)Si, TiSi2|Si, (311)TiSi2|(002)Si,  TiSi2|Si and (022)TiSi2|(200)Si, TiSi2|Si with misorientations of 6°, 2° and 14.74°, respectively.
Bibliographical noteFunding Information:
This work was supported in part by the Center for interface Science and Engineering. KAIST. This work has been financed by the Foundation
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry