Formation and epitaxial growth of titanium-disilicide on Si (111)

Chi Kyu Choi, Hyung-Ho Park, Jeong Yong Lee, Kyoung Ik Cho, Mun Cheol Paek, Oh Joon Kwon, Kun Ho Kim, Soo Jeong Yang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi2|(220)Si, [123]TiSi2|[112]Si, (311)TiSi2|(002)Si, [136] TiSi2|[110]Si and (022)TiSi2|(200)Si, [233]TiSi2|[011]Si with misorientations of 6°, 2° and 14.74°, respectively.

Original languageEnglish
Pages (from-to)579-588
Number of pages10
JournalJournal of Crystal Growth
Volume115
Issue number1-4
DOIs
Publication statusPublished - 1991 Dec 2

Fingerprint

Titanium
Epitaxial growth
titanium
Annealing
Reflection high energy electron diffraction
Ultrahigh vacuum
Silicon
Image resolution
Silicon wafers
annealing
Monolayers
silicon
Electron microscopes
misalignment
high energy electrons
ultrahigh vacuum
purity
electron diffraction
electron microscopes
wafers

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Choi, C. K., Park, H-H., Lee, J. Y., Cho, K. I., Paek, M. C., Kwon, O. J., ... Yang, S. J. (1991). Formation and epitaxial growth of titanium-disilicide on Si (111). Journal of Crystal Growth, 115(1-4), 579-588. https://doi.org/10.1016/0022-0248(91)90808-I
Choi, Chi Kyu ; Park, Hyung-Ho ; Lee, Jeong Yong ; Cho, Kyoung Ik ; Paek, Mun Cheol ; Kwon, Oh Joon ; Kim, Kun Ho ; Yang, Soo Jeong. / Formation and epitaxial growth of titanium-disilicide on Si (111). In: Journal of Crystal Growth. 1991 ; Vol. 115, No. 1-4. pp. 579-588.
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abstract = "Titanium-disilicide was formed by deposition of high purity titanium (99.99{\%}) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi2|(220)Si, [123]TiSi2|[112]Si, (311)TiSi2|(002)Si, [136] TiSi2|[110]Si and (022)TiSi2|(200)Si, [233]TiSi2|[011]Si with misorientations of 6°, 2° and 14.74°, respectively.",
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Choi, CK, Park, H-H, Lee, JY, Cho, KI, Paek, MC, Kwon, OJ, Kim, KH & Yang, SJ 1991, 'Formation and epitaxial growth of titanium-disilicide on Si (111)', Journal of Crystal Growth, vol. 115, no. 1-4, pp. 579-588. https://doi.org/10.1016/0022-0248(91)90808-I

Formation and epitaxial growth of titanium-disilicide on Si (111). / Choi, Chi Kyu; Park, Hyung-Ho; Lee, Jeong Yong; Cho, Kyoung Ik; Paek, Mun Cheol; Kwon, Oh Joon; Kim, Kun Ho; Yang, Soo Jeong.

In: Journal of Crystal Growth, Vol. 115, No. 1-4, 02.12.1991, p. 579-588.

Research output: Contribution to journalArticle

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T1 - Formation and epitaxial growth of titanium-disilicide on Si (111)

AU - Choi, Chi Kyu

AU - Park, Hyung-Ho

AU - Lee, Jeong Yong

AU - Cho, Kyoung Ik

AU - Paek, Mun Cheol

AU - Kwon, Oh Joon

AU - Kim, Kun Ho

AU - Yang, Soo Jeong

PY - 1991/12/2

Y1 - 1991/12/2

N2 - Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi2|(220)Si, [123]TiSi2|[112]Si, (311)TiSi2|(002)Si, [136] TiSi2|[110]Si and (022)TiSi2|(200)Si, [233]TiSi2|[011]Si with misorientations of 6°, 2° and 14.74°, respectively.

AB - Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi2|(220)Si, [123]TiSi2|[112]Si, (311)TiSi2|(002)Si, [136] TiSi2|[110]Si and (022)TiSi2|(200)Si, [233]TiSi2|[011]Si with misorientations of 6°, 2° and 14.74°, respectively.

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