Formation and epitaxial growth of titanium-disilicide on Si (111)

Chi Kyu Choi; Hyung Ho Park; Jeong Yong Lee; Kyoung Ik Cho; Mun Cheol Paek; Oh Joon Kwon; Kun Ho Kim; Soo Jeong Yang

doi:10.1016/0022-0248(91)90808-I

Formation and epitaxial growth of titanium-disilicide on Si (111)

Chi Kyu Choi, Hyung Ho Park, Jeong Yong Lee, Kyoung Ik Cho, Mun Cheol Paek, Oh Joon Kwon, Kun Ho Kim, Soo Jeong Yang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi₂ on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi₂ with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi₂/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi₂|(220)Si, [123]TiSi₂|[112]Si, (311)TiSi₂|(002)Si, [136] TiSi₂|[110]Si and (022)TiSi₂|(200)Si, [233]TiSi₂|[011]Si with misorientations of 6°, 2° and 14.74°, respectively.

Original language	English
Pages (from-to)	579-588
Number of pages	10
Journal	Journal of Crystal Growth
Volume	115
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)90808-I
Publication status	Published - 1991 Dec 2

Bibliographical note

Funding Information:
This work was supported in part by the Center for interface Science and Engineering. KAIST. This work has been financed by the Foundation

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(91)90808-I

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title = "Formation and epitaxial growth of titanium-disilicide on Si (111)",

abstract = "Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi2|(220)Si, [123]TiSi2|[112]Si, (311)TiSi2|(002)Si, [136] TiSi2|[110]Si and (022)TiSi2|(200)Si, [233]TiSi2|[011]Si with misorientations of 6°, 2° and 14.74°, respectively.",

author = "Choi, {Chi Kyu} and Park, {Hyung Ho} and Lee, {Jeong Yong} and Cho, {Kyoung Ik} and Paek, {Mun Cheol} and Kwon, {Oh Joon} and Kim, {Kun Ho} and Yang, {Soo Jeong}",

note = "Funding Information: This work was supported in part by the Center for interface Science and Engineering. KAIST. This work has been financed by the Foundation",

year = "1991",

month = dec,

day = "2",

doi = "10.1016/0022-0248(91)90808-I",

language = "English",

volume = "115",

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T1 - Formation and epitaxial growth of titanium-disilicide on Si (111)

AU - Choi, Chi Kyu

AU - Park, Hyung Ho

AU - Lee, Jeong Yong

AU - Cho, Kyoung Ik

AU - Paek, Mun Cheol

AU - Kwon, Oh Joon

AU - Kim, Kun Ho

AU - Yang, Soo Jeong

N1 - Funding Information: This work was supported in part by the Center for interface Science and Engineering. KAIST. This work has been financed by the Foundation

PY - 1991/12/2

Y1 - 1991/12/2

N2 - Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi2|(220)Si, [123]TiSi2|[112]Si, (311)TiSi2|(002)Si, [136] TiSi2|[110]Si and (022)TiSi2|(200)Si, [233]TiSi2|[011]Si with misorientations of 6°, 2° and 14.74°, respectively.

AB - Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi2|(220)Si, [123]TiSi2|[112]Si, (311)TiSi2|(002)Si, [136] TiSi2|[110]Si and (022)TiSi2|(200)Si, [233]TiSi2|[011]Si with misorientations of 6°, 2° and 14.74°, respectively.

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Formation and epitaxial growth of titanium-disilicide on Si (111)

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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