Abstract
Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750°C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111)TiSi2|(220)Si, [123]TiSi2|[112]Si, (311)TiSi2|(002)Si, [136] TiSi2|[110]Si and (022)TiSi2|(200)Si, [233]TiSi2|[011]Si with misorientations of 6°, 2° and 14.74°, respectively.
Original language | English |
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Pages (from-to) | 579-588 |
Number of pages | 10 |
Journal | Journal of Crystal Growth |
Volume | 115 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1991 Dec 2 |
Bibliographical note
Funding Information:This work was supported in part by the Center for interface Science and Engineering. KAIST. This work has been financed by the Foundation
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry