Formation and thermal stability of Ti-capped Co-silicide from Co-Ta alloy films on (100) Si and polycrystalline silicon

Min Joo Kim, Hyo Jick Choi, Dae Hong Ko, Ja Hum Ku, Siyoung Choi, Kazuyuki Fujihara, Cheol Woong Yang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Co-Ta alloy films were deposited on (100) single-crystalline and polycrystalline silicon substrates by using DC magnetron sputtering. The interfacial reactions between the Co-Ta alloy films and the silicon substrates were investigated in the temperature range of 500∼820 °C by using rapid thermal annealing in an N2 ambient. In contrast to the Co/Si system, we observed that the formation of Co-silicide and the transformation from the high resistivity CoSt phase to the low resistivity CoSi2 phase in the Co-Ta/Si system occurred at higher temperatures than it did in the Co/Si system. The Co-silicide films on Si and poly-Si substrates formed from Co-Ta alloy films maintained low sheet resistance values upon high temperature annealing while those of Co-silicide films from the Co/Si system increased significantly. The improvement in the thermal stability of the Co-silicide films formed from Co-Ta alloy films is due to the formation of Ta-compounds, such as the TaSi2 phase, at the grain boundaries and at the surfaces of the CoSi2 films.

Original languageEnglish
Pages (from-to)737-741
Number of pages5
JournalJournal of the Korean Physical Society
Volume40
Issue number4
Publication statusPublished - 2002 Apr 1

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thermal stability
silicon
electrical resistivity
annealing
magnetron sputtering
grain boundaries
direct current
costs

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, Min Joo ; Choi, Hyo Jick ; Ko, Dae Hong ; Ku, Ja Hum ; Choi, Siyoung ; Fujihara, Kazuyuki ; Yang, Cheol Woong. / Formation and thermal stability of Ti-capped Co-silicide from Co-Ta alloy films on (100) Si and polycrystalline silicon. In: Journal of the Korean Physical Society. 2002 ; Vol. 40, No. 4. pp. 737-741.
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abstract = "Co-Ta alloy films were deposited on (100) single-crystalline and polycrystalline silicon substrates by using DC magnetron sputtering. The interfacial reactions between the Co-Ta alloy films and the silicon substrates were investigated in the temperature range of 500∼820 °C by using rapid thermal annealing in an N2 ambient. In contrast to the Co/Si system, we observed that the formation of Co-silicide and the transformation from the high resistivity CoSt phase to the low resistivity CoSi2 phase in the Co-Ta/Si system occurred at higher temperatures than it did in the Co/Si system. The Co-silicide films on Si and poly-Si substrates formed from Co-Ta alloy films maintained low sheet resistance values upon high temperature annealing while those of Co-silicide films from the Co/Si system increased significantly. The improvement in the thermal stability of the Co-silicide films formed from Co-Ta alloy films is due to the formation of Ta-compounds, such as the TaSi2 phase, at the grain boundaries and at the surfaces of the CoSi2 films.",
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Formation and thermal stability of Ti-capped Co-silicide from Co-Ta alloy films on (100) Si and polycrystalline silicon. / Kim, Min Joo; Choi, Hyo Jick; Ko, Dae Hong; Ku, Ja Hum; Choi, Siyoung; Fujihara, Kazuyuki; Yang, Cheol Woong.

In: Journal of the Korean Physical Society, Vol. 40, No. 4, 01.04.2002, p. 737-741.

Research output: Contribution to journalArticle

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T1 - Formation and thermal stability of Ti-capped Co-silicide from Co-Ta alloy films on (100) Si and polycrystalline silicon

AU - Kim, Min Joo

AU - Choi, Hyo Jick

AU - Ko, Dae Hong

AU - Ku, Ja Hum

AU - Choi, Siyoung

AU - Fujihara, Kazuyuki

AU - Yang, Cheol Woong

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AB - Co-Ta alloy films were deposited on (100) single-crystalline and polycrystalline silicon substrates by using DC magnetron sputtering. The interfacial reactions between the Co-Ta alloy films and the silicon substrates were investigated in the temperature range of 500∼820 °C by using rapid thermal annealing in an N2 ambient. In contrast to the Co/Si system, we observed that the formation of Co-silicide and the transformation from the high resistivity CoSt phase to the low resistivity CoSi2 phase in the Co-Ta/Si system occurred at higher temperatures than it did in the Co/Si system. The Co-silicide films on Si and poly-Si substrates formed from Co-Ta alloy films maintained low sheet resistance values upon high temperature annealing while those of Co-silicide films from the Co/Si system increased significantly. The improvement in the thermal stability of the Co-silicide films formed from Co-Ta alloy films is due to the formation of Ta-compounds, such as the TaSi2 phase, at the grain boundaries and at the surfaces of the CoSi2 films.

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