Formation of a Ge-rich Si1-xGex (x > 0.9) fin epitaxial layer condensed by dry oxidation

Hyunchul Jang; Byongju Kim; Sangmo Koo; Dae Hong Ko

doi:10.1088/1361-6641/aa8b03

Formation of a Ge-rich Si_1-xGe_x (x > 0.9) fin epitaxial layer condensed by dry oxidation

Hyunchul Jang, Byongju Kim, Sangmo Koo, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have selectively grown an epitaxial Si_0.35Ge_0.65 fin layer in a 65 nm oxide trench pattern array and formed a Ge-rich Si_1-xGe_x (x > 0.9) fin layer with condensed Ge using dry oxidation. During oxidation of the SiGe fin structure, we found that the compressive strain of the condensed SiGe layer was increased by about 1.3% while Ge was efficiently condensed due to a two-dimensional oxidation reaction. In this paper, we discussed in detail the diffusion during the two-dimensional condensation reaction as well as the asymmetric biaxial strain of the SiGe fin before and after oxidation using a reciprocal space mapping measurement. The application of dry oxidation on selectively grown SiGe fin layer can be an effective method for increasing hole mobility of SiGe fin with increased Ge content and self-induced compressive strain.

Original language	English
Article number	114001
Journal	Semiconductor Science and Technology
Volume	32
Issue number	11
DOIs	https://doi.org/10.1088/1361-6641/aa8b03
Publication status	Published - 2017 Sep 29

Bibliographical note

Funding Information:
This work was financially supported by a grant from the R&D Program for Industrial Core Technology funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea (grant No. 10045216). The authors would like to acknowledge Professor Heungsoo Park for valuable discussions.

Publisher Copyright:
© 2017 IOP Publishing Ltd.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Formation of a Ge-rich Si1-xGex (x > 0.9) fin epitaxial layer condensed by dry oxidation",

abstract = "We have selectively grown an epitaxial Si0.35Ge0.65 fin layer in a 65 nm oxide trench pattern array and formed a Ge-rich Si1-xGex (x > 0.9) fin layer with condensed Ge using dry oxidation. During oxidation of the SiGe fin structure, we found that the compressive strain of the condensed SiGe layer was increased by about 1.3% while Ge was efficiently condensed due to a two-dimensional oxidation reaction. In this paper, we discussed in detail the diffusion during the two-dimensional condensation reaction as well as the asymmetric biaxial strain of the SiGe fin before and after oxidation using a reciprocal space mapping measurement. The application of dry oxidation on selectively grown SiGe fin layer can be an effective method for increasing hole mobility of SiGe fin with increased Ge content and self-induced compressive strain.",

author = "Hyunchul Jang and Byongju Kim and Sangmo Koo and Ko, {Dae Hong}",

note = "Funding Information: This work was financially supported by a grant from the R&D Program for Industrial Core Technology funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea (grant No. 10045216). The authors would like to acknowledge Professor Heungsoo Park for valuable discussions. Publisher Copyright: {\textcopyright} 2017 IOP Publishing Ltd.",

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AU - Jang, Hyunchul

AU - Kim, Byongju

AU - Koo, Sangmo

AU - Ko, Dae Hong

N1 - Funding Information: This work was financially supported by a grant from the R&D Program for Industrial Core Technology funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea (grant No. 10045216). The authors would like to acknowledge Professor Heungsoo Park for valuable discussions. Publisher Copyright: © 2017 IOP Publishing Ltd.

PY - 2017/9/29

Y1 - 2017/9/29

N2 - We have selectively grown an epitaxial Si0.35Ge0.65 fin layer in a 65 nm oxide trench pattern array and formed a Ge-rich Si1-xGex (x > 0.9) fin layer with condensed Ge using dry oxidation. During oxidation of the SiGe fin structure, we found that the compressive strain of the condensed SiGe layer was increased by about 1.3% while Ge was efficiently condensed due to a two-dimensional oxidation reaction. In this paper, we discussed in detail the diffusion during the two-dimensional condensation reaction as well as the asymmetric biaxial strain of the SiGe fin before and after oxidation using a reciprocal space mapping measurement. The application of dry oxidation on selectively grown SiGe fin layer can be an effective method for increasing hole mobility of SiGe fin with increased Ge content and self-induced compressive strain.

AB - We have selectively grown an epitaxial Si0.35Ge0.65 fin layer in a 65 nm oxide trench pattern array and formed a Ge-rich Si1-xGex (x > 0.9) fin layer with condensed Ge using dry oxidation. During oxidation of the SiGe fin structure, we found that the compressive strain of the condensed SiGe layer was increased by about 1.3% while Ge was efficiently condensed due to a two-dimensional oxidation reaction. In this paper, we discussed in detail the diffusion during the two-dimensional condensation reaction as well as the asymmetric biaxial strain of the SiGe fin before and after oxidation using a reciprocal space mapping measurement. The application of dry oxidation on selectively grown SiGe fin layer can be an effective method for increasing hole mobility of SiGe fin with increased Ge content and self-induced compressive strain.

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