Formation of a quantum dot in a single-walled carbon nanotube using the Al top-gates

J. W. Park, J. B. Choi, K. H. Yoo

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We have fabricated gate-controlled carbon-nanotube single-electron devices by utilizing the line-shaped Al top-gates. A quantum dot is formed in the single-walled carbon nanotube between two Al top-gates fabricated using the electron-beam lithography technique. The deposited top-gates flatten the single-walled carbon nanotube locally and the deformed regions play the role of tunneling barrier, whose potential is controlled by the top-gates. We have also investigated the temperature dependence of the conductance G for the devices with the Al top-gates. The power-law dependence, G∝Tα, is observed at high temperatures. However, the exponent α increases as the barrier potential is enhanced.

Original languageEnglish
Pages (from-to)2644-2646
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number14
DOIs
Publication statusPublished - 2002 Sep 30

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carbon nanotubes
quantum dots
lithography
exponents
electron beams
temperature dependence
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We have fabricated gate-controlled carbon-nanotube single-electron devices by utilizing the line-shaped Al top-gates. A quantum dot is formed in the single-walled carbon nanotube between two Al top-gates fabricated using the electron-beam lithography technique. The deposited top-gates flatten the single-walled carbon nanotube locally and the deformed regions play the role of tunneling barrier, whose potential is controlled by the top-gates. We have also investigated the temperature dependence of the conductance G for the devices with the Al top-gates. The power-law dependence, G∝Tα, is observed at high temperatures. However, the exponent α increases as the barrier potential is enhanced.",
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Formation of a quantum dot in a single-walled carbon nanotube using the Al top-gates. / Park, J. W.; Choi, J. B.; Yoo, K. H.

In: Applied Physics Letters, Vol. 81, No. 14, 30.09.2002, p. 2644-2646.

Research output: Contribution to journalArticle

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