Formation of amorphous and crystalline phases, and phase transition by solid-state reaction in Zr Si multilayer thin films

Jae Yeob Shim, Joon Seop Kwak, Eung Jun Chi, Hong Koo Baik, Sung Man Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Amorphous phase and crystalline phase formation, and phase transition by solid-state reaction were observed in Zr Si multilayer thin films by differential scanning calorimetry and X-ray diffraction. The result was compared with those expected by the effective driving force and effective heat of formation models. An amorphous reaction occurred in Zr Si multilayer thin films and it was consistent with that predicted by the effective driving force model. The first crystalline phase formed by solid-state reaction was found to be ZrSi in the Zr Si system. According to the effective heat of formation model, however, ZrSi2 was expected to be formed first. The difference in first crystalline phase between the experimental result and the predicted one is discussed. ZrSi2 was formed after the formation of ZrSi, regardless of the atomic concentration ratios of Zr Si multilayer thin films. The rate-controlling step for the formation of ZrSi was a nucleation of ZrSi and the activation energies for the formation of ZrSi and ZrSi2 were 1.64 ± 0.19 eV and 2.28 ± 0.36 eV, respectively.

Original languageEnglish
Pages (from-to)102-107
Number of pages6
JournalThin Solid Films
Volume269
Issue number1-2
DOIs
Publication statusPublished - 1995 Nov 15

Fingerprint

Multilayer films
Solid state reactions
Phase transitions
Crystalline materials
solid state
Thin films
heat of formation
thin films
Differential scanning calorimetry
Nucleation
Activation energy
X ray diffraction
heat measurement
nucleation
activation energy
scanning
diffraction
x rays
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Shim, Jae Yeob ; Kwak, Joon Seop ; Chi, Eung Jun ; Baik, Hong Koo ; Lee, Sung Man. / Formation of amorphous and crystalline phases, and phase transition by solid-state reaction in Zr Si multilayer thin films. In: Thin Solid Films. 1995 ; Vol. 269, No. 1-2. pp. 102-107.
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Formation of amorphous and crystalline phases, and phase transition by solid-state reaction in Zr Si multilayer thin films. / Shim, Jae Yeob; Kwak, Joon Seop; Chi, Eung Jun; Baik, Hong Koo; Lee, Sung Man.

In: Thin Solid Films, Vol. 269, No. 1-2, 15.11.1995, p. 102-107.

Research output: Contribution to journalArticle

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T1 - Formation of amorphous and crystalline phases, and phase transition by solid-state reaction in Zr Si multilayer thin films

AU - Shim, Jae Yeob

AU - Kwak, Joon Seop

AU - Chi, Eung Jun

AU - Baik, Hong Koo

AU - Lee, Sung Man

PY - 1995/11/15

Y1 - 1995/11/15

N2 - Amorphous phase and crystalline phase formation, and phase transition by solid-state reaction were observed in Zr Si multilayer thin films by differential scanning calorimetry and X-ray diffraction. The result was compared with those expected by the effective driving force and effective heat of formation models. An amorphous reaction occurred in Zr Si multilayer thin films and it was consistent with that predicted by the effective driving force model. The first crystalline phase formed by solid-state reaction was found to be ZrSi in the Zr Si system. According to the effective heat of formation model, however, ZrSi2 was expected to be formed first. The difference in first crystalline phase between the experimental result and the predicted one is discussed. ZrSi2 was formed after the formation of ZrSi, regardless of the atomic concentration ratios of Zr Si multilayer thin films. The rate-controlling step for the formation of ZrSi was a nucleation of ZrSi and the activation energies for the formation of ZrSi and ZrSi2 were 1.64 ± 0.19 eV and 2.28 ± 0.36 eV, respectively.

AB - Amorphous phase and crystalline phase formation, and phase transition by solid-state reaction were observed in Zr Si multilayer thin films by differential scanning calorimetry and X-ray diffraction. The result was compared with those expected by the effective driving force and effective heat of formation models. An amorphous reaction occurred in Zr Si multilayer thin films and it was consistent with that predicted by the effective driving force model. The first crystalline phase formed by solid-state reaction was found to be ZrSi in the Zr Si system. According to the effective heat of formation model, however, ZrSi2 was expected to be formed first. The difference in first crystalline phase between the experimental result and the predicted one is discussed. ZrSi2 was formed after the formation of ZrSi, regardless of the atomic concentration ratios of Zr Si multilayer thin films. The rate-controlling step for the formation of ZrSi was a nucleation of ZrSi and the activation energies for the formation of ZrSi and ZrSi2 were 1.64 ± 0.19 eV and 2.28 ± 0.36 eV, respectively.

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