In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm−3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke’s figure of merit (FOM) was calculated to be 1.94 × 10−3 for the ITO film and 45.02 × 10−3 Ω−1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.
|Number of pages||5|
|Journal||Journal of Electronic Materials|
|Publication status||Published - 2016 Aug 1|
Bibliographical noteFunding Information:
This work was supported by the Korea Evaluation Institute of Industrial Technology (KEIT) (Grant No. 10049601) and WC300 R&D (Grant No. S2317456) through Korea Institute for Advancement of Technology (KIAT) which is funded by the Small and Medium Business Administration. S.-K.K. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), which is funded by the Ministry of Science, ICT, and Future Planning (NRF-2013R1A1A1059423).
© 2016, The Minerals, Metals & Materials Society.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry