Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

Jun Ho Kim; Da Som Kim; Sun Kyung Kim; Young Zo Yoo; Jeong Hwan Lee; Sang Woo Kim; Tae Yeon Seong

doi:10.1007/s11664-016-4612-4

Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

Jun Ho Kim, Da Som Kim, Sun Kyung Kim, Young Zo Yoo, Jeong Hwan Lee, Sang Woo Kim, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 10²⁰ and 7.68 × 10²¹ cm⁻³ and mobilities of 27.18 cm²/V s and 18.17 cm²/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke’s figure of merit (FOM) was calculated to be 1.94 × 10⁻³ for the ITO film and 45.02 × 10⁻³ Ω⁻¹ for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

Original language	English
Pages (from-to)	4265-4269
Number of pages	5
Journal	Journal of Electronic Materials
Volume	45
Issue number	8
DOIs	https://doi.org/10.1007/s11664-016-4612-4
Publication status	Published - 2016 Aug 1

Bibliographical note

Funding Information:
This work was supported by the Korea Evaluation Institute of Industrial Technology (KEIT) (Grant No. 10049601) and WC300 R&D (Grant No. S2317456) through Korea Institute for Advancement of Technology (KIAT) which is funded by the Small and Medium Business Administration. S.-K.K. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), which is funded by the Ministry of Science, ICT, and Future Planning (NRF-2013R1A1A1059423).

Publisher Copyright:
© 2016, The Minerals, Metals & Materials Society.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-016-4612-4

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title = "Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film",

abstract = "In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm−3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke{\textquoteright}s figure of merit (FOM) was calculated to be 1.94 × 10−3 for the ITO film and 45.02 × 10−3 Ω−1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.",

author = "Kim, {Jun Ho} and Kim, {Da Som} and Kim, {Sun Kyung} and Yoo, {Young Zo} and Lee, {Jeong Hwan} and Kim, {Sang Woo} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the Korea Evaluation Institute of Industrial Technology (KEIT) (Grant No. 10049601) and WC300 R&D (Grant No. S2317456) through Korea Institute for Advancement of Technology (KIAT) which is funded by the Small and Medium Business Administration. S.-K.K. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), which is funded by the Ministry of Science, ICT, and Future Planning (NRF-2013R1A1A1059423). Publisher Copyright: {\textcopyright} 2016, The Minerals, Metals & Materials Society.",

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doi = "10.1007/s11664-016-4612-4",

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AU - Kim, Jun Ho

AU - Kim, Da Som

AU - Kim, Sun Kyung

AU - Yoo, Young Zo

AU - Lee, Jeong Hwan

AU - Kim, Sang Woo

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the Korea Evaluation Institute of Industrial Technology (KEIT) (Grant No. 10049601) and WC300 R&D (Grant No. S2317456) through Korea Institute for Advancement of Technology (KIAT) which is funded by the Small and Medium Business Administration. S.-K.K. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), which is funded by the Ministry of Science, ICT, and Future Planning (NRF-2013R1A1A1059423). Publisher Copyright: © 2016, The Minerals, Metals & Materials Society.

PY - 2016/8/1

Y1 - 2016/8/1

N2 - In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm−3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke’s figure of merit (FOM) was calculated to be 1.94 × 10−3 for the ITO film and 45.02 × 10−3 Ω−1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

AB - In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm−3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke’s figure of merit (FOM) was calculated to be 1.94 × 10−3 for the ITO film and 45.02 × 10−3 Ω−1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

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ER -

Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

Abstract

Bibliographical note

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