Formation of Functional Conductive Carbon Coating on Si by C60 Ion Beam

Vladimir Pukha; Julia Popova; Mahdi Khadem; Dae Eun Kim; Igor Khodos; Alexander Shakhmin; Maxim Mishin; Kirill Krainov; Andrei Titov; Platon Karaseov

doi:10.1007/978-3-030-58868-7_15

Formation of Functional Conductive Carbon Coating on Si by C₆₀ Ion Beam

Vladimir Pukha, Julia Popova, Mahdi Khadem, Dae Eun Kim, Igor Khodos, Alexander Shakhmin, Maxim Mishin, Kirill Krainov, Andrei Titov, Platon Karaseov

Department of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We report new carbon-based coating that can be utilysed as a hard chemically inert highly condictive transparent blanket for electrodes and moving parts in a wide range of electronic and MEMS applications. Diamond-like carbon film was grown on (100) n-Si substrate by accelerated C₆₀ ion beam irradiation. Ion energy was kept at 5 and 8 keV, substrate temperature was varied in the range 100–400 ℃. Irradiation with 5 keV beam results in growth of carbon films at all temperatures used. Films are amorphous with high amount of sp3-bonded carbon atoms. Graphite nanocrystals of ~1.5 nm in size were found in the coatings grown at 400 ℃. 8 keV beam sputters the Si target at 100 and 200 ℃, while bombardment at higher temperatures (300 and 400 ℃) results in carbon film growth. Graphite nano-crystal formation is much less pronounced at this energy. In all cases, silicon carbide interlayer is formed at the substrate-coating interface due to the ion-beam mixing effect, which results in a good adhesion of the coating. Electric resistivity of coating obtained with 8 keV ions at T_s = 400 ℃ is 1.5 × 10⁻⁴ Ω × m, whereas 5 keV ions at same T_s = 400 ℃ gives 9 × 10⁻⁴ Ω × m.

Original language	English
Title of host publication	International Youth Conference on Electronics, Telecommunications and Information Technologies - Proceedings of the YETI 2020
Editors	Elena Velichko, Maksim Vinnichenko, Victoria Kapralova, Yevgeni Koucheryavy
Publisher	Springer Science and Business Media Deutschland GmbH
Pages	131-139
Number of pages	9
ISBN (Print)	9783030588670
DOIs	https://doi.org/10.1007/978-3-030-58868-7_15
Publication status	Published - 2021
Event	International Youth Conference on Electronics, Telecommunications and Information Technologies, YETI 2020 - St. Petersburg, Russian Federation Duration: 2020 Jul 10 → 2020 Jul 11

Publication series

Name	Springer Proceedings in Physics
Volume	255
ISSN (Print)	0930-8989
ISSN (Electronic)	1867-4941

Conference

Conference	International Youth Conference on Electronics, Telecommunications and Information Technologies, YETI 2020
Country/Territory	Russian Federation
City	St. Petersburg
Period	20/7/10 → 20/7/11

Bibliographical note

Funding Information:
Acknowledgements Work was supported by Russian Foundation for Basic Research (RFBR), grant # 19-58-51016 and the National Research Foundation of Korea (NRF) grant funded by the Korea government. (MSIT) (2019K2A9A1A06097636).

Publisher Copyright:
© 2021, Springer Nature Switzerland AG.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1007/978-3-030-58868-7_15

Cite this

Pukha, V., Popova, J., Khadem, M., Kim, D. E., Khodos, I., Shakhmin, A., Mishin, M., Krainov, K., Titov, A., & Karaseov, P. (2021). Formation of Functional Conductive Carbon Coating on Si by C₆₀ Ion Beam. In E. Velichko, M. Vinnichenko, V. Kapralova, & Y. Koucheryavy (Eds.), International Youth Conference on Electronics, Telecommunications and Information Technologies - Proceedings of the YETI 2020 (pp. 131-139). (Springer Proceedings in Physics; Vol. 255). Springer Science and Business Media Deutschland GmbH. https://doi.org/10.1007/978-3-030-58868-7_15

Pukha, Vladimir ; Popova, Julia ; Khadem, Mahdi et al. / Formation of Functional Conductive Carbon Coating on Si by C₆₀ Ion Beam. International Youth Conference on Electronics, Telecommunications and Information Technologies - Proceedings of the YETI 2020. editor / Elena Velichko ; Maksim Vinnichenko ; Victoria Kapralova ; Yevgeni Koucheryavy. Springer Science and Business Media Deutschland GmbH, 2021. pp. 131-139 (Springer Proceedings in Physics).

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title = "Formation of Functional Conductive Carbon Coating on Si by C60 Ion Beam",

abstract = "We report new carbon-based coating that can be utilysed as a hard chemically inert highly condictive transparent blanket for electrodes and moving parts in a wide range of electronic and MEMS applications. Diamond-like carbon film was grown on (100) n-Si substrate by accelerated C60 ion beam irradiation. Ion energy was kept at 5 and 8 keV, substrate temperature was varied in the range 100–400 ℃. Irradiation with 5 keV beam results in growth of carbon films at all temperatures used. Films are amorphous with high amount of sp3-bonded carbon atoms. Graphite nanocrystals of ~1.5 nm in size were found in the coatings grown at 400 ℃. 8 keV beam sputters the Si target at 100 and 200 ℃, while bombardment at higher temperatures (300 and 400 ℃) results in carbon film growth. Graphite nano-crystal formation is much less pronounced at this energy. In all cases, silicon carbide interlayer is formed at the substrate-coating interface due to the ion-beam mixing effect, which results in a good adhesion of the coating. Electric resistivity of coating obtained with 8 keV ions at Ts = 400 ℃ is 1.5 × 10−4 Ω × m, whereas 5 keV ions at same Ts = 400 ℃ gives 9 × 10−4 Ω × m.",

author = "Vladimir Pukha and Julia Popova and Mahdi Khadem and Kim, {Dae Eun} and Igor Khodos and Alexander Shakhmin and Maxim Mishin and Kirill Krainov and Andrei Titov and Platon Karaseov",

note = "Funding Information: Acknowledgements Work was supported by Russian Foundation for Basic Research (RFBR), grant # 19-58-51016 and the National Research Foundation of Korea (NRF) grant funded by the Korea government. (MSIT) (2019K2A9A1A06097636). Publisher Copyright: {\textcopyright} 2021, Springer Nature Switzerland AG.; International Youth Conference on Electronics, Telecommunications and Information Technologies, YETI 2020 ; Conference date: 10-07-2020 Through 11-07-2020",

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Pukha, V, Popova, J, Khadem, M, Kim, DE, Khodos, I, Shakhmin, A, Mishin, M, Krainov, K, Titov, A & Karaseov, P 2021, Formation of Functional Conductive Carbon Coating on Si by C₆₀ Ion Beam. in E Velichko, M Vinnichenko, V Kapralova & Y Koucheryavy (eds), International Youth Conference on Electronics, Telecommunications and Information Technologies - Proceedings of the YETI 2020. Springer Proceedings in Physics, vol. 255, Springer Science and Business Media Deutschland GmbH, pp. 131-139, International Youth Conference on Electronics, Telecommunications and Information Technologies, YETI 2020, St. Petersburg, Russian Federation, 20/7/10. https://doi.org/10.1007/978-3-030-58868-7_15

Formation of Functional Conductive Carbon Coating on Si by C₆₀ Ion Beam. / Pukha, Vladimir; Popova, Julia; Khadem, Mahdi et al.

International Youth Conference on Electronics, Telecommunications and Information Technologies - Proceedings of the YETI 2020. ed. / Elena Velichko; Maksim Vinnichenko; Victoria Kapralova; Yevgeni Koucheryavy. Springer Science and Business Media Deutschland GmbH, 2021. p. 131-139 (Springer Proceedings in Physics; Vol. 255).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Pukha, Vladimir

AU - Popova, Julia

AU - Khadem, Mahdi

AU - Kim, Dae Eun

AU - Khodos, Igor

AU - Shakhmin, Alexander

AU - Mishin, Maxim

AU - Krainov, Kirill

AU - Titov, Andrei

AU - Karaseov, Platon

N1 - Funding Information: Acknowledgements Work was supported by Russian Foundation for Basic Research (RFBR), grant # 19-58-51016 and the National Research Foundation of Korea (NRF) grant funded by the Korea government. (MSIT) (2019K2A9A1A06097636). Publisher Copyright: © 2021, Springer Nature Switzerland AG.

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N2 - We report new carbon-based coating that can be utilysed as a hard chemically inert highly condictive transparent blanket for electrodes and moving parts in a wide range of electronic and MEMS applications. Diamond-like carbon film was grown on (100) n-Si substrate by accelerated C60 ion beam irradiation. Ion energy was kept at 5 and 8 keV, substrate temperature was varied in the range 100–400 ℃. Irradiation with 5 keV beam results in growth of carbon films at all temperatures used. Films are amorphous with high amount of sp3-bonded carbon atoms. Graphite nanocrystals of ~1.5 nm in size were found in the coatings grown at 400 ℃. 8 keV beam sputters the Si target at 100 and 200 ℃, while bombardment at higher temperatures (300 and 400 ℃) results in carbon film growth. Graphite nano-crystal formation is much less pronounced at this energy. In all cases, silicon carbide interlayer is formed at the substrate-coating interface due to the ion-beam mixing effect, which results in a good adhesion of the coating. Electric resistivity of coating obtained with 8 keV ions at Ts = 400 ℃ is 1.5 × 10−4 Ω × m, whereas 5 keV ions at same Ts = 400 ℃ gives 9 × 10−4 Ω × m.

AB - We report new carbon-based coating that can be utilysed as a hard chemically inert highly condictive transparent blanket for electrodes and moving parts in a wide range of electronic and MEMS applications. Diamond-like carbon film was grown on (100) n-Si substrate by accelerated C60 ion beam irradiation. Ion energy was kept at 5 and 8 keV, substrate temperature was varied in the range 100–400 ℃. Irradiation with 5 keV beam results in growth of carbon films at all temperatures used. Films are amorphous with high amount of sp3-bonded carbon atoms. Graphite nanocrystals of ~1.5 nm in size were found in the coatings grown at 400 ℃. 8 keV beam sputters the Si target at 100 and 200 ℃, while bombardment at higher temperatures (300 and 400 ℃) results in carbon film growth. Graphite nano-crystal formation is much less pronounced at this energy. In all cases, silicon carbide interlayer is formed at the substrate-coating interface due to the ion-beam mixing effect, which results in a good adhesion of the coating. Electric resistivity of coating obtained with 8 keV ions at Ts = 400 ℃ is 1.5 × 10−4 Ω × m, whereas 5 keV ions at same Ts = 400 ℃ gives 9 × 10−4 Ω × m.

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Pukha V, Popova J, Khadem M, Kim DE, Khodos I, Shakhmin A et al. Formation of Functional Conductive Carbon Coating on Si by C₆₀ Ion Beam. In Velichko E, Vinnichenko M, Kapralova V, Koucheryavy Y, editors, International Youth Conference on Electronics, Telecommunications and Information Technologies - Proceedings of the YETI 2020. Springer Science and Business Media Deutschland GmbH. 2021. p. 131-139. (Springer Proceedings in Physics). doi: 10.1007/978-3-030-58868-7_15