GdSi2 film with almost perfect interface was grown on a Si (111) substrate via phase transformation assisted by interfacial SiO2 layer. The evolution of Gd silicide and the role of an oxide layer were investigated by using in situ reflection of high-energy electron diffraction, x-ray diffraction (XRD), atomic force microscopy (AFM), x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy (HRTEM). The XRD and AFM results confirm structural transformation from the initial GdSi1.7 layer to the GdSi2 layer after the post-annealing at 900 °C. The HRTEM image suggests that the formation of GdSi2 follows kinetic growth process, where the grain growth is dominated by the abundance of Si at the reacting surface. The thermally decomposed interfacial oxide initiates rapid phase transformation and finally results in almost perfect GdSi2 Si interface without any residual oxide or mixed structure.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2005|
Bibliographical noteFunding Information:
This work is supported by the BK21 Project and KOSEF through the Atomic-scale Surface Science Research Center (ASSRC) at Yonsei University. Additional support by the Yonsei Center for Nano-Technology (YCNT) for M. N. is gratefully acknowledged.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering