Formation of GdSi2 film on Si (111) via phase transformation assisted by interfacial SiO2 layer

K. B. Chung, Y. K. Choi, M. H. Jang, M. Noh, C. N. Whang, H. K. Jang, E. J. Jung, D. H. Ko

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

GdSi2 film with almost perfect interface was grown on a Si (111) substrate via phase transformation assisted by interfacial SiO2 layer. The evolution of Gd silicide and the role of an oxide layer were investigated by using in situ reflection of high-energy electron diffraction, x-ray diffraction (XRD), atomic force microscopy (AFM), x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy (HRTEM). The XRD and AFM results confirm structural transformation from the initial GdSi1.7 layer to the GdSi2 layer after the post-annealing at 900 °C. The HRTEM image suggests that the formation of GdSi2 follows kinetic growth process, where the grain growth is dominated by the abundance of Si at the reacting surface. The thermally decomposed interfacial oxide initiates rapid phase transformation and finally results in almost perfect GdSi2 Si interface without any residual oxide or mixed structure.

Original languageEnglish
Pages (from-to)153-156
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number1
DOIs
Publication statusPublished - 2005

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Formation of GdSi<sub>2</sub> film on Si (111) via phase transformation assisted by interfacial SiO<sub>2</sub> layer'. Together they form a unique fingerprint.

  • Cite this