Formation of graphene on SiC by chemical vapor deposition with liquid sources

Jun Gyu Kim, Woo Sik Kim, Young Hee Kim, Chang Hyun Lim, Doo Jin Choi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Many studies of graphene and graphene oxide (GO) have been conducted due to their excellent chemical, mechanical and electrical properties and wide potential applications, and various methods are used to fabricate them. In this study, we grew graphene on silicon carbide (SiC) substrates by chemical vapor deposition (CVD) using toluene- and xylene-based liquid sources. Raman spectroscopy and TEM analysis confirmed the growth of graphene on SiC substrates when toluene was used and revealed that GO grew when xylene was used. The mechanism of the formation of GO and graphene from the different liquid sources was examined, and the change in thickness and electrical conductivity observed when graphene and GO were reduced through heat treatment was also evaluated.

Original languageEnglish
Pages (from-to)189-192
Number of pages4
JournalSurface and Coatings Technology
Volume231
DOIs
Publication statusPublished - 2013 Sep 25

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Graphite
Silicon carbide
silicon carbides
Graphene
Chemical vapor deposition
graphene
vapor deposition
Liquids
liquids
Oxides
Xylenes
oxides
Toluene
xylene
Xylene
toluene
silicon carbide
Substrates
chemical properties
Chemical properties

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Kim, Jun Gyu ; Kim, Woo Sik ; Kim, Young Hee ; Lim, Chang Hyun ; Choi, Doo Jin. / Formation of graphene on SiC by chemical vapor deposition with liquid sources. In: Surface and Coatings Technology. 2013 ; Vol. 231. pp. 189-192.
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Formation of graphene on SiC by chemical vapor deposition with liquid sources. / Kim, Jun Gyu; Kim, Woo Sik; Kim, Young Hee; Lim, Chang Hyun; Choi, Doo Jin.

In: Surface and Coatings Technology, Vol. 231, 25.09.2013, p. 189-192.

Research output: Contribution to journalArticle

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