Formation of high-temperature stable Co-silicide from Co 0.92 Ta 0.08 /Si systems

Deok Hyung Lee, Dae Hong Ko, Ja Hum Ku, Siyoung Choi, Kazuyuki Fujihara, Ho Kyu Kang, Sang Ho Oh, Chan Gyung Park, Hoo Jeung Lee

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Abstract

We investigated the formation and thermal stability of Co-silicide films using Co-Ta alloy films on (100) Si substrates. Co-Ta alloy films were deposited by direct current (DC) magnetron sputtering using Co and Ta targets. The content of Ta in the films was controlled at 8 at.%. The Co-silicide films were formed through a rapid thermal annealing (RTA) process in N 2 ambient. Compared with the Co/Si systems, the formation of CoSi 2 occurs at higher temperatures in Co 0.92 Ta 0.08 /Si systems. X-Ray diffractometry (XRD) analyses showed the presence of strong (200)-preferred orientation in the Co-silicide films formed from Co 0.92 Ta 0.08 /Si systems. We observed that Co-silicide films formed from Co 0.92 Ta 0.08 /Si systems maintained low sheet resistance values upon annealing at 950°C, while those of Co-silicide from Co/Si systems increased significantly. The improvement of the thermal stability of the Co-silicide films from Co 0.92 Ta 0.08 /Si systems is due to the formation of Ta-compounds such as the TaSi 2 phase at the grain boundaries or at the surface of the CoSi 2 films.

Original languageEnglish
Pages (from-to)2712-2716
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number4 B
Publication statusPublished - 2001 Apr 1

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Temperature
Thermodynamic stability
thermal stability
annealing
Rapid thermal annealing
Sheet resistance
Magnetron sputtering
X ray diffraction analysis
magnetron sputtering
Grain boundaries
grain boundaries
direct current
Annealing
Substrates
x rays

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lee, Deok Hyung ; Ko, Dae Hong ; Ku, Ja Hum ; Choi, Siyoung ; Fujihara, Kazuyuki ; Kang, Ho Kyu ; Oh, Sang Ho ; Park, Chan Gyung ; Lee, Hoo Jeung. / Formation of high-temperature stable Co-silicide from Co 0.92 Ta 0.08 /Si systems In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2001 ; Vol. 40, No. 4 B. pp. 2712-2716.
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Formation of high-temperature stable Co-silicide from Co 0.92 Ta 0.08 /Si systems . / Lee, Deok Hyung; Ko, Dae Hong; Ku, Ja Hum; Choi, Siyoung; Fujihara, Kazuyuki; Kang, Ho Kyu; Oh, Sang Ho; Park, Chan Gyung; Lee, Hoo Jeung.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 4 B, 01.04.2001, p. 2712-2716.

Research output: Contribution to journalArticle

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T1 - Formation of high-temperature stable Co-silicide from Co 0.92 Ta 0.08 /Si systems

AU - Lee, Deok Hyung

AU - Ko, Dae Hong

AU - Ku, Ja Hum

AU - Choi, Siyoung

AU - Fujihara, Kazuyuki

AU - Kang, Ho Kyu

AU - Oh, Sang Ho

AU - Park, Chan Gyung

AU - Lee, Hoo Jeung

PY - 2001/4/1

Y1 - 2001/4/1

N2 - We investigated the formation and thermal stability of Co-silicide films using Co-Ta alloy films on (100) Si substrates. Co-Ta alloy films were deposited by direct current (DC) magnetron sputtering using Co and Ta targets. The content of Ta in the films was controlled at 8 at.%. The Co-silicide films were formed through a rapid thermal annealing (RTA) process in N 2 ambient. Compared with the Co/Si systems, the formation of CoSi 2 occurs at higher temperatures in Co 0.92 Ta 0.08 /Si systems. X-Ray diffractometry (XRD) analyses showed the presence of strong (200)-preferred orientation in the Co-silicide films formed from Co 0.92 Ta 0.08 /Si systems. We observed that Co-silicide films formed from Co 0.92 Ta 0.08 /Si systems maintained low sheet resistance values upon annealing at 950°C, while those of Co-silicide from Co/Si systems increased significantly. The improvement of the thermal stability of the Co-silicide films from Co 0.92 Ta 0.08 /Si systems is due to the formation of Ta-compounds such as the TaSi 2 phase at the grain boundaries or at the surface of the CoSi 2 films.

AB - We investigated the formation and thermal stability of Co-silicide films using Co-Ta alloy films on (100) Si substrates. Co-Ta alloy films were deposited by direct current (DC) magnetron sputtering using Co and Ta targets. The content of Ta in the films was controlled at 8 at.%. The Co-silicide films were formed through a rapid thermal annealing (RTA) process in N 2 ambient. Compared with the Co/Si systems, the formation of CoSi 2 occurs at higher temperatures in Co 0.92 Ta 0.08 /Si systems. X-Ray diffractometry (XRD) analyses showed the presence of strong (200)-preferred orientation in the Co-silicide films formed from Co 0.92 Ta 0.08 /Si systems. We observed that Co-silicide films formed from Co 0.92 Ta 0.08 /Si systems maintained low sheet resistance values upon annealing at 950°C, while those of Co-silicide from Co/Si systems increased significantly. The improvement of the thermal stability of the Co-silicide films from Co 0.92 Ta 0.08 /Si systems is due to the formation of Ta-compounds such as the TaSi 2 phase at the grain boundaries or at the surface of the CoSi 2 films.

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