Formation of high-temperature stable Co-silicide from Co 0.92 Ta 0.08 /Si systems

Deok Hyung Lee, Dae Hong Ko, Ja Hum Ku, Siyoung Choi, Kazuyuki Fujihara, Ho Kyu Kang, Sang Ho Oh, Chan Gyung Park, Hoo Jeung Lee

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Abstract

We investigated the formation and thermal stability of Co-silicide films using Co-Ta alloy films on (100) Si substrates. Co-Ta alloy films were deposited by direct current (DC) magnetron sputtering using Co and Ta targets. The content of Ta in the films was controlled at 8 at.%. The Co-silicide films were formed through a rapid thermal annealing (RTA) process in N 2 ambient. Compared with the Co/Si systems, the formation of CoSi 2 occurs at higher temperatures in Co 0.92 Ta 0.08 /Si systems. X-Ray diffractometry (XRD) analyses showed the presence of strong (200)-preferred orientation in the Co-silicide films formed from Co 0.92 Ta 0.08 /Si systems. We observed that Co-silicide films formed from Co 0.92 Ta 0.08 /Si systems maintained low sheet resistance values upon annealing at 950°C, while those of Co-silicide from Co/Si systems increased significantly. The improvement of the thermal stability of the Co-silicide films from Co 0.92 Ta 0.08 /Si systems is due to the formation of Ta-compounds such as the TaSi 2 phase at the grain boundaries or at the surface of the CoSi 2 films.

Original languageEnglish
Pages (from-to)2712-2716
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number4 B
Publication statusPublished - 2001 Apr 1

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lee, D. H., Ko, D. H., Ku, J. H., Choi, S., Fujihara, K., Kang, H. K., Oh, S. H., Park, C. G., & Lee, H. J. (2001). Formation of high-temperature stable Co-silicide from Co 0.92 Ta 0.08 /Si systems Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40(4 B), 2712-2716.