Abstract
We investigated the formation and thermal stability of Co-silicide films using Co-Ta alloy films on (100) Si substrates. Co-Ta alloy films were deposited by direct current (DC) magnetron sputtering using Co and Ta targets. The content of Ta in the films was controlled at 8 at.%. The Co-silicide films were formed through a rapid thermal annealing (RTA) process in N2 ambient. Compared with the Co/Si systems, the formation of CoSi2 occurs at higher temperatures in Co0.92Ta0.08/Si systems. X-Ray diffractometry (XRD) analyses showed the presence of strong (200)-preferred orientation in the Co-silicide films formed from Co0.92Ta0.08/Si systems. We observed that Co-silicide films formed from Co0.92Ta0.08/Si systems maintained low sheet resistance values upon annealing at 950°C, while those of Co-silicide from Co/Si systems increased significantly. The improvement of the thermal stability of the Co-silicide films from Co0.92Ta0.08/Si systems is due to the formation of Ta-compounds such as the TaSi2 phase at the grain boundaries or at the surface of the CoSi2 films.
Original language | English |
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Pages (from-to) | 2712-2716 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 40 |
Issue number | 4 B |
DOIs | |
Publication status | Published - 2001 Apr |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)