Formation of midgap states and ferromagnetism in semiconducting CaB6

B. K. Cho, Jong Soo Rhyee, B. H. Oh, M. H. Jung, H. C. Kim, Y. K. Yoon, Jae Hoon Kim, T. Ekino

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

We present a consistent overall picture of the electronic structure and ferromagnetic interaction in CaB6, based on our joint transport, optical, and tunneling measurements on high-quality defect-controlled single crystals. Pure CaB6 single crystals, synthesized with 99.9999% pure boron, exhibited fully semiconducting characteristics, such as monotonic resistance for 2-300 K, a tunneling conductance gap, and an optical absorption threshold at 1.0 eV. Boron-related defects formed in CaB6 single crystals synthesized with 99.9% pure boron induced midgap states 0.18 eV below the conduction band and extra free charge carriers, with the transport, optical, and tunneling properties substantially modified. Remarkably, no ferromagnetic signals were detected from single crystals made with 99.9999% pure boron, regardless of stoichiometry, whereas those made with 99.9% boron exhibited ferromagnetism within a finite range of carrier density. The possible surmise between the electronic state and magnetization will be discussed.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number11
DOIs
Publication statusPublished - 2004 Mar 23

Fingerprint

Boron
Ferromagnetism
ferromagnetism
boron
Single crystals
single crystals
Defects
defects
Electronic states
Conduction bands
Charge carriers
optical measurement
Stoichiometry
Light absorption
Electronic structure
Carrier concentration
charge carriers
stoichiometry
Magnetization
conduction bands

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Cho, B. K. ; Rhyee, Jong Soo ; Oh, B. H. ; Jung, M. H. ; Kim, H. C. ; Yoon, Y. K. ; Kim, Jae Hoon ; Ekino, T. / Formation of midgap states and ferromagnetism in semiconducting CaB6. In: Physical Review B - Condensed Matter and Materials Physics. 2004 ; Vol. 69, No. 11.
@article{5d15ff458bed41a684fc9c61c21dc948,
title = "Formation of midgap states and ferromagnetism in semiconducting CaB6",
abstract = "We present a consistent overall picture of the electronic structure and ferromagnetic interaction in CaB6, based on our joint transport, optical, and tunneling measurements on high-quality defect-controlled single crystals. Pure CaB6 single crystals, synthesized with 99.9999{\%} pure boron, exhibited fully semiconducting characteristics, such as monotonic resistance for 2-300 K, a tunneling conductance gap, and an optical absorption threshold at 1.0 eV. Boron-related defects formed in CaB6 single crystals synthesized with 99.9{\%} pure boron induced midgap states 0.18 eV below the conduction band and extra free charge carriers, with the transport, optical, and tunneling properties substantially modified. Remarkably, no ferromagnetic signals were detected from single crystals made with 99.9999{\%} pure boron, regardless of stoichiometry, whereas those made with 99.9{\%} boron exhibited ferromagnetism within a finite range of carrier density. The possible surmise between the electronic state and magnetization will be discussed.",
author = "Cho, {B. K.} and Rhyee, {Jong Soo} and Oh, {B. H.} and Jung, {M. H.} and Kim, {H. C.} and Yoon, {Y. K.} and Kim, {Jae Hoon} and T. Ekino",
year = "2004",
month = "3",
day = "23",
doi = "10.1103/PhysRevB.69.113202",
language = "English",
volume = "69",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "11",

}

Formation of midgap states and ferromagnetism in semiconducting CaB6. / Cho, B. K.; Rhyee, Jong Soo; Oh, B. H.; Jung, M. H.; Kim, H. C.; Yoon, Y. K.; Kim, Jae Hoon; Ekino, T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 69, No. 11, 23.03.2004.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Formation of midgap states and ferromagnetism in semiconducting CaB6

AU - Cho, B. K.

AU - Rhyee, Jong Soo

AU - Oh, B. H.

AU - Jung, M. H.

AU - Kim, H. C.

AU - Yoon, Y. K.

AU - Kim, Jae Hoon

AU - Ekino, T.

PY - 2004/3/23

Y1 - 2004/3/23

N2 - We present a consistent overall picture of the electronic structure and ferromagnetic interaction in CaB6, based on our joint transport, optical, and tunneling measurements on high-quality defect-controlled single crystals. Pure CaB6 single crystals, synthesized with 99.9999% pure boron, exhibited fully semiconducting characteristics, such as monotonic resistance for 2-300 K, a tunneling conductance gap, and an optical absorption threshold at 1.0 eV. Boron-related defects formed in CaB6 single crystals synthesized with 99.9% pure boron induced midgap states 0.18 eV below the conduction band and extra free charge carriers, with the transport, optical, and tunneling properties substantially modified. Remarkably, no ferromagnetic signals were detected from single crystals made with 99.9999% pure boron, regardless of stoichiometry, whereas those made with 99.9% boron exhibited ferromagnetism within a finite range of carrier density. The possible surmise between the electronic state and magnetization will be discussed.

AB - We present a consistent overall picture of the electronic structure and ferromagnetic interaction in CaB6, based on our joint transport, optical, and tunneling measurements on high-quality defect-controlled single crystals. Pure CaB6 single crystals, synthesized with 99.9999% pure boron, exhibited fully semiconducting characteristics, such as monotonic resistance for 2-300 K, a tunneling conductance gap, and an optical absorption threshold at 1.0 eV. Boron-related defects formed in CaB6 single crystals synthesized with 99.9% pure boron induced midgap states 0.18 eV below the conduction band and extra free charge carriers, with the transport, optical, and tunneling properties substantially modified. Remarkably, no ferromagnetic signals were detected from single crystals made with 99.9999% pure boron, regardless of stoichiometry, whereas those made with 99.9% boron exhibited ferromagnetism within a finite range of carrier density. The possible surmise between the electronic state and magnetization will be discussed.

UR - http://www.scopus.com/inward/record.url?scp=85039015903&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85039015903&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.69.113202

DO - 10.1103/PhysRevB.69.113202

M3 - Article

AN - SCOPUS:85039015903

VL - 69

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 11

ER -