Formation of nano iridium oxide: Material properties and neural cell culture

In Seop Lee, Chung Nam Whang, Young Hee Lee, Gun Hwan Lee, Bong Joo Park, Jong Chul Park, Won Seon Seo, Fu Zhai Cui

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Iridium film with the thickness of 30 and 60 nm were formed on both Si wafer and commercially pure (CP) Ti by electron beam evaporation. The thin iridium film showed the identical charge injection capability with the bulk Ir. However, the charge injection value of iridium film was decreased with continuous potential cycling when the deposited iridium became depleted due to the formation of oxide. The number of cycles at which the charge injection value decreased was 800 and 1600 cycles for the 30- and 60-nm-thick Ir film, respectively. FE-SEM observations on the cross section of Ir film clearly showed the thicker iridium oxide was formed with the more potential cycling. Ar ion beam etching to substrates before deposition certainly improved the adhesion strength of Ir film enough to resist to the strain induced by the larger volume occupation of iridium oxide. Swiss 3T3 fibroblasts culture on Ir and Ir oxide showed no cytotoxicity. Also, embryonic cortical neural cell culture on electrode indicated neurons adhered and survived by the formation of neurofilament.

Original languageEnglish
Pages (from-to)332-336
Number of pages5
JournalThin Solid Films
Volume475
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2005 Mar 22

Fingerprint

Iridium
iridium
Cell culture
Materials properties
Charge injection
Oxides
oxides
cycles
injection
Bond strength (materials)
Fibroblasts
Cytotoxicity
Thick films
Ion beams
fibroblasts
Neurons
Electron beams
Etching
neurons
Evaporation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Lee, I. S., Whang, C. N., Lee, Y. H., Hwan Lee, G., Park, B. J., Park, J. C., ... Cui, F. Z. (2005). Formation of nano iridium oxide: Material properties and neural cell culture. Thin Solid Films, 475(1-2 SPEC. ISS.), 332-336. https://doi.org/10.1016/j.tsf.2004.08.076
Lee, In Seop ; Whang, Chung Nam ; Lee, Young Hee ; Hwan Lee, Gun ; Park, Bong Joo ; Park, Jong Chul ; Seo, Won Seon ; Cui, Fu Zhai. / Formation of nano iridium oxide : Material properties and neural cell culture. In: Thin Solid Films. 2005 ; Vol. 475, No. 1-2 SPEC. ISS. pp. 332-336.
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Lee, IS, Whang, CN, Lee, YH, Hwan Lee, G, Park, BJ, Park, JC, Seo, WS & Cui, FZ 2005, 'Formation of nano iridium oxide: Material properties and neural cell culture', Thin Solid Films, vol. 475, no. 1-2 SPEC. ISS., pp. 332-336. https://doi.org/10.1016/j.tsf.2004.08.076

Formation of nano iridium oxide : Material properties and neural cell culture. / Lee, In Seop; Whang, Chung Nam; Lee, Young Hee; Hwan Lee, Gun; Park, Bong Joo; Park, Jong Chul; Seo, Won Seon; Cui, Fu Zhai.

In: Thin Solid Films, Vol. 475, No. 1-2 SPEC. ISS., 22.03.2005, p. 332-336.

Research output: Contribution to journalArticle

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AU - Lee, In Seop

AU - Whang, Chung Nam

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AU - Hwan Lee, Gun

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AU - Park, Jong Chul

AU - Seo, Won Seon

AU - Cui, Fu Zhai

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N2 - Iridium film with the thickness of 30 and 60 nm were formed on both Si wafer and commercially pure (CP) Ti by electron beam evaporation. The thin iridium film showed the identical charge injection capability with the bulk Ir. However, the charge injection value of iridium film was decreased with continuous potential cycling when the deposited iridium became depleted due to the formation of oxide. The number of cycles at which the charge injection value decreased was 800 and 1600 cycles for the 30- and 60-nm-thick Ir film, respectively. FE-SEM observations on the cross section of Ir film clearly showed the thicker iridium oxide was formed with the more potential cycling. Ar ion beam etching to substrates before deposition certainly improved the adhesion strength of Ir film enough to resist to the strain induced by the larger volume occupation of iridium oxide. Swiss 3T3 fibroblasts culture on Ir and Ir oxide showed no cytotoxicity. Also, embryonic cortical neural cell culture on electrode indicated neurons adhered and survived by the formation of neurofilament.

AB - Iridium film with the thickness of 30 and 60 nm were formed on both Si wafer and commercially pure (CP) Ti by electron beam evaporation. The thin iridium film showed the identical charge injection capability with the bulk Ir. However, the charge injection value of iridium film was decreased with continuous potential cycling when the deposited iridium became depleted due to the formation of oxide. The number of cycles at which the charge injection value decreased was 800 and 1600 cycles for the 30- and 60-nm-thick Ir film, respectively. FE-SEM observations on the cross section of Ir film clearly showed the thicker iridium oxide was formed with the more potential cycling. Ar ion beam etching to substrates before deposition certainly improved the adhesion strength of Ir film enough to resist to the strain induced by the larger volume occupation of iridium oxide. Swiss 3T3 fibroblasts culture on Ir and Ir oxide showed no cytotoxicity. Also, embryonic cortical neural cell culture on electrode indicated neurons adhered and survived by the formation of neurofilament.

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Lee IS, Whang CN, Lee YH, Hwan Lee G, Park BJ, Park JC et al. Formation of nano iridium oxide: Material properties and neural cell culture. Thin Solid Films. 2005 Mar 22;475(1-2 SPEC. ISS.):332-336. https://doi.org/10.1016/j.tsf.2004.08.076