The silicidation of Ni deposited by plasma-enhanced atomic layer deposition with NH3 plasma and thermal atomic layer deposition using NH3 gas were comparatively studied. A SiNx interlayer was formed between the Ni deposited by plasma-enhanced atomic layer deposition and the Si substrate due to the direct exposure of the substrate to plasma, while no interlayer was observed when using thermal atomic layer deposition. In the plasma-enhanced atomic layer deposition, the diffusion of Ni was suppressed by the SiNx interlayer, so no Ni2Si phase was formed and its formation temperature increased. Ni formed by thermal atomic layer deposition showed sequential phase transformations to Ni2Si, NiSi, and NiSi2 with increased annealing temperatures. In the nanosized contact holes, a large amount of NiSi2 was formed due to the limited supply of Ni. These results provide important information for the fabrication of silicide in nanoscale 3D devices.
Bibliographical noteFunding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2014R1A1A2059845 ), and by the MOTIE (Ministry of Trade, Industry & Energy) ( 10053098 ) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)