Formation of p-type ZnO film on InP substrate by phosphor doping

Kyu Hyun Bang, Deuk Kyu Hwang, Min Chul Park, Young Don Ko, Ilgu Yun, Jae Min Myoung

Research output: Contribution to journalArticle

92 Citations (Scopus)

Abstract

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn3P2 was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn3P2 diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.

Original languageEnglish
Pages (from-to)177-182
Number of pages6
JournalApplied Surface Science
Volume210
Issue number3-4
DOIs
Publication statusPublished - 2003 Apr 15

Fingerprint

Phosphors
Doping (additives)
Thin films
Substrates
Electric properties
Optical devices
Magnetron sputtering

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Bang, Kyu Hyun ; Hwang, Deuk Kyu ; Park, Min Chul ; Ko, Young Don ; Yun, Ilgu ; Myoung, Jae Min. / Formation of p-type ZnO film on InP substrate by phosphor doping. In: Applied Surface Science. 2003 ; Vol. 210, No. 3-4. pp. 177-182.
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Formation of p-type ZnO film on InP substrate by phosphor doping. / Bang, Kyu Hyun; Hwang, Deuk Kyu; Park, Min Chul; Ko, Young Don; Yun, Ilgu; Myoung, Jae Min.

In: Applied Surface Science, Vol. 210, No. 3-4, 15.04.2003, p. 177-182.

Research output: Contribution to journalArticle

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AU - Bang, Kyu Hyun

AU - Hwang, Deuk Kyu

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AU - Myoung, Jae Min

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