Abstract
Direct patterning of ZnO thin film was realized without photoresist and dry etching by photochemical solution deposition. Photosensitive ortho-nitrobenzaldehyde was introduced into the solution precursors as a stabilizer and contributed to form a cross-linked network structure during photochemical reaction. Ag nanoparticles were prepared with uniform size distribution using trisodium citrate as a capping agent to incorporate into ZnO thin film in order to reduce the electrical resistance of the film. The optical and electrical properties of ZnO film with or without Ag nanoparticles after anneal at various temperatures were investigated. The reduction in transmittance with the increase in anneal temperature was observed and also the increase in the electrical resistance was found. The increase in the surface roughness of ZnO film and the decrease of surface oxygen deficiencies were mainly responsible for the decrease in transmittance and the increase in electrical resistance, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 7739-7742 |
| Number of pages | 4 |
| Journal | Applied Surface Science |
| Volume | 252 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2006 Aug 31 |
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All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
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Formation of photoresist-free patterned ZnO film containing nano-sized Ag by photochemical solution deposition. / Hong, Chae Seon; Park, Hyeong Ho; Wang, Seok Joo; Moon, Jooho; Park, Hyung Ho; Hill, Ross H.
In: Applied Surface Science, Vol. 252, No. 21, 31.08.2006, p. 7739-7742.Research output: Contribution to journal › Article
TY - JOUR
T1 - Formation of photoresist-free patterned ZnO film containing nano-sized Ag by photochemical solution deposition
AU - Hong, Chae Seon
AU - Park, Hyeong Ho
AU - Wang, Seok Joo
AU - Moon, Jooho
AU - Park, Hyung Ho
AU - Hill, Ross H.
PY - 2006/8/31
Y1 - 2006/8/31
N2 - Direct patterning of ZnO thin film was realized without photoresist and dry etching by photochemical solution deposition. Photosensitive ortho-nitrobenzaldehyde was introduced into the solution precursors as a stabilizer and contributed to form a cross-linked network structure during photochemical reaction. Ag nanoparticles were prepared with uniform size distribution using trisodium citrate as a capping agent to incorporate into ZnO thin film in order to reduce the electrical resistance of the film. The optical and electrical properties of ZnO film with or without Ag nanoparticles after anneal at various temperatures were investigated. The reduction in transmittance with the increase in anneal temperature was observed and also the increase in the electrical resistance was found. The increase in the surface roughness of ZnO film and the decrease of surface oxygen deficiencies were mainly responsible for the decrease in transmittance and the increase in electrical resistance, respectively.
AB - Direct patterning of ZnO thin film was realized without photoresist and dry etching by photochemical solution deposition. Photosensitive ortho-nitrobenzaldehyde was introduced into the solution precursors as a stabilizer and contributed to form a cross-linked network structure during photochemical reaction. Ag nanoparticles were prepared with uniform size distribution using trisodium citrate as a capping agent to incorporate into ZnO thin film in order to reduce the electrical resistance of the film. The optical and electrical properties of ZnO film with or without Ag nanoparticles after anneal at various temperatures were investigated. The reduction in transmittance with the increase in anneal temperature was observed and also the increase in the electrical resistance was found. The increase in the surface roughness of ZnO film and the decrease of surface oxygen deficiencies were mainly responsible for the decrease in transmittance and the increase in electrical resistance, respectively.
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U2 - 10.1016/j.apsusc.2006.03.070
DO - 10.1016/j.apsusc.2006.03.070
M3 - Article
AN - SCOPUS:33747190885
VL - 252
SP - 7739
EP - 7742
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 21
ER -