We have constructed a direct metal ion beam deposition (DMIBD) system, which consists of a primary cesium ion source and a negative ion source. The Si- ion current and deposition energy can be controlled independently and precisely, which are the major advantages of DMIBD system. Poly-Si films were deposited on a glass substrate at a temperature of 200-500°C with ion beam energy from 10 to 100 eV by a direct metal ion beam deposition (DMIBD) system. The deposition of poly-Si films at low temperatures can be explained by a kinetic bonding process. Transmission electron microscope images show the capability of grain size control by adjusting the ion beam energy. The resistivity is very low and it is also considered that in situ doping was performed during the deposition of the silicon films by this technique.
Bibliographical noteFunding Information:
This study was supported by the academic research fund of the Ministry of Education, Republic of Korea under contract 96-33-0118.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry