Formation of polycrystalline silicon films on glass substrates at low-temperatures by a direct negative Si ion beam deposition system

Doo Jin Choi, Y. H. Kim, D. W. Han, Hong Koo Baik, S. I. Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have constructed a direct metal ion beam deposition (DMIBD) system, which consists of a primary cesium ion source and a negative ion source. The Si- ion current and deposition energy can be controlled independently and precisely, which are the major advantages of DMIBD system. Poly-Si films were deposited on a glass substrate at a temperature of 200-500°C with ion beam energy from 10 to 100 eV by a direct metal ion beam deposition (DMIBD) system. The deposition of poly-Si films at low temperatures can be explained by a kinetic bonding process. Transmission electron microscope images show the capability of grain size control by adjusting the ion beam energy. The resistivity is very low and it is also considered that in situ doping was performed during the deposition of the silicon films by this technique.

Original languageEnglish
Pages (from-to)718-722
Number of pages5
JournalJournal of Crystal Growth
Volume191
Issue number4
DOIs
Publication statusPublished - 1998 Aug 1

Fingerprint

silicon films
Polysilicon
negative ions
Ion beams
ion beams
Glass
glass
Substrates
Metal ions
metal ions
Ion sources
ion sources
Temperature
cesium ions
Cesium
Silicon
ion currents
energy
Electron microscopes
Negative ions

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

@article{8c4a1230fe6c40c3a9a4b20f9b9d9cb6,
title = "Formation of polycrystalline silicon films on glass substrates at low-temperatures by a direct negative Si ion beam deposition system",
abstract = "We have constructed a direct metal ion beam deposition (DMIBD) system, which consists of a primary cesium ion source and a negative ion source. The Si- ion current and deposition energy can be controlled independently and precisely, which are the major advantages of DMIBD system. Poly-Si films were deposited on a glass substrate at a temperature of 200-500°C with ion beam energy from 10 to 100 eV by a direct metal ion beam deposition (DMIBD) system. The deposition of poly-Si films at low temperatures can be explained by a kinetic bonding process. Transmission electron microscope images show the capability of grain size control by adjusting the ion beam energy. The resistivity is very low and it is also considered that in situ doping was performed during the deposition of the silicon films by this technique.",
author = "Choi, {Doo Jin} and Kim, {Y. H.} and Han, {D. W.} and Baik, {Hong Koo} and Kim, {S. I.}",
year = "1998",
month = "8",
day = "1",
doi = "10.1016/S0022-0248(98)00370-4",
language = "English",
volume = "191",
pages = "718--722",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "4",

}

Formation of polycrystalline silicon films on glass substrates at low-temperatures by a direct negative Si ion beam deposition system. / Choi, Doo Jin; Kim, Y. H.; Han, D. W.; Baik, Hong Koo; Kim, S. I.

In: Journal of Crystal Growth, Vol. 191, No. 4, 01.08.1998, p. 718-722.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Formation of polycrystalline silicon films on glass substrates at low-temperatures by a direct negative Si ion beam deposition system

AU - Choi, Doo Jin

AU - Kim, Y. H.

AU - Han, D. W.

AU - Baik, Hong Koo

AU - Kim, S. I.

PY - 1998/8/1

Y1 - 1998/8/1

N2 - We have constructed a direct metal ion beam deposition (DMIBD) system, which consists of a primary cesium ion source and a negative ion source. The Si- ion current and deposition energy can be controlled independently and precisely, which are the major advantages of DMIBD system. Poly-Si films were deposited on a glass substrate at a temperature of 200-500°C with ion beam energy from 10 to 100 eV by a direct metal ion beam deposition (DMIBD) system. The deposition of poly-Si films at low temperatures can be explained by a kinetic bonding process. Transmission electron microscope images show the capability of grain size control by adjusting the ion beam energy. The resistivity is very low and it is also considered that in situ doping was performed during the deposition of the silicon films by this technique.

AB - We have constructed a direct metal ion beam deposition (DMIBD) system, which consists of a primary cesium ion source and a negative ion source. The Si- ion current and deposition energy can be controlled independently and precisely, which are the major advantages of DMIBD system. Poly-Si films were deposited on a glass substrate at a temperature of 200-500°C with ion beam energy from 10 to 100 eV by a direct metal ion beam deposition (DMIBD) system. The deposition of poly-Si films at low temperatures can be explained by a kinetic bonding process. Transmission electron microscope images show the capability of grain size control by adjusting the ion beam energy. The resistivity is very low and it is also considered that in situ doping was performed during the deposition of the silicon films by this technique.

UR - http://www.scopus.com/inward/record.url?scp=0032137721&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032137721&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(98)00370-4

DO - 10.1016/S0022-0248(98)00370-4

M3 - Article

VL - 191

SP - 718

EP - 722

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 4

ER -