The structural and reflectance properties of large gallium (Ga) droplets and GaAs islands grown by droplet epitaxy (DE) were presented. The reflectance results of self-assembled large GaAs islands by DE suggest the possibility of a novel method for antireflective coating. The diameter, height, density, and aspect ratio of large Ga droplets were investigated up to the scale of optical size. After GaAs island growth, the reflectance of s-polarization at 70° on in-situ measurement was reduced up to approximately 2-20 in the wavelength range of 350-900 nm. For large GaAs islands, reduction of reflectance for s-, p-polarization at 20°-80° and reduction of reflectance at normal incidence was presented. This result shows that a layer of self-assembled large GaAs islands by DE can be a good candidate for an antireflector for high-quality optoelectronic devices.
Bibliographical noteFunding Information:
The authors acknowledge the support from the KIST institutional program, including the Dream Project, the Converging Research Center Program through the MEST (2012K001280) and the GRL Program. Also, this work was supported by WCU program through NRF grant funded by the MEST (R33-2012-000-10118-0).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)