Formation of self-assembled large droplet-epitaxial GaAs islands for the application to reduced reflection

E. H. Lee; J. D. Song; J. J. Yoon; M. H. Bae; I. K. Han; W. J. Choi; S. K. Chang; Y. D. Kim; J. S. Kim

doi:10.1063/1.4801903

Formation of self-assembled large droplet-epitaxial GaAs islands for the application to reduced reflection

E. H. Lee, J. D. Song, J. J. Yoon, M. H. Bae, I. K. Han, W. J. Choi, S. K. Chang, Y. D. Kim, J. S. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The structural and reflectance properties of large gallium (Ga) droplets and GaAs islands grown by droplet epitaxy (DE) were presented. The reflectance results of self-assembled large GaAs islands by DE suggest the possibility of a novel method for antireflective coating. The diameter, height, density, and aspect ratio of large Ga droplets were investigated up to the scale of optical size. After GaAs island growth, the reflectance of s-polarization at 70° on in-situ measurement was reduced up to approximately 2-20 in the wavelength range of 350-900 nm. For large GaAs islands, reduction of reflectance for s-, p-polarization at 20°-80° and reduction of reflectance at normal incidence was presented. This result shows that a layer of self-assembled large GaAs islands by DE can be a good candidate for an antireflector for high-quality optoelectronic devices.

Original language	English
Article number	154308
Journal	Journal of Applied Physics
Volume	113
Issue number	15
DOIs	https://doi.org/10.1063/1.4801903
Publication status	Published - 2013 Apr

Bibliographical note

Funding Information:
The authors acknowledge the support from the KIST institutional program, including the Dream Project, the Converging Research Center Program through the MEST (2012K001280) and the GRL Program. Also, this work was supported by WCU program through NRF grant funded by the MEST (R33-2012-000-10118-0).

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Physics and Astronomy(all)

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@article{b30fcdaa5db94601a6fb999b29c517d0,

title = "Formation of self-assembled large droplet-epitaxial GaAs islands for the application to reduced reflection",

abstract = "The structural and reflectance properties of large gallium (Ga) droplets and GaAs islands grown by droplet epitaxy (DE) were presented. The reflectance results of self-assembled large GaAs islands by DE suggest the possibility of a novel method for antireflective coating. The diameter, height, density, and aspect ratio of large Ga droplets were investigated up to the scale of optical size. After GaAs island growth, the reflectance of s-polarization at 70° on in-situ measurement was reduced up to approximately 2-20 in the wavelength range of 350-900 nm. For large GaAs islands, reduction of reflectance for s-, p-polarization at 20°-80° and reduction of reflectance at normal incidence was presented. This result shows that a layer of self-assembled large GaAs islands by DE can be a good candidate for an antireflector for high-quality optoelectronic devices.",

author = "Lee, {E. H.} and Song, {J. D.} and Yoon, {J. J.} and Bae, {M. H.} and Han, {I. K.} and Choi, {W. J.} and Chang, {S. K.} and Kim, {Y. D.} and Kim, {J. S.}",

note = "Funding Information: The authors acknowledge the support from the KIST institutional program, including the Dream Project, the Converging Research Center Program through the MEST (2012K001280) and the GRL Program. Also, this work was supported by WCU program through NRF grant funded by the MEST (R33-2012-000-10118-0).",

year = "2013",

month = apr,

doi = "10.1063/1.4801903",

language = "English",

volume = "113",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "15",

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T1 - Formation of self-assembled large droplet-epitaxial GaAs islands for the application to reduced reflection

AU - Lee, E. H.

AU - Song, J. D.

AU - Yoon, J. J.

AU - Bae, M. H.

AU - Han, I. K.

AU - Choi, W. J.

AU - Chang, S. K.

AU - Kim, Y. D.

AU - Kim, J. S.

N1 - Funding Information: The authors acknowledge the support from the KIST institutional program, including the Dream Project, the Converging Research Center Program through the MEST (2012K001280) and the GRL Program. Also, this work was supported by WCU program through NRF grant funded by the MEST (R33-2012-000-10118-0).

PY - 2013/4

Y1 - 2013/4

N2 - The structural and reflectance properties of large gallium (Ga) droplets and GaAs islands grown by droplet epitaxy (DE) were presented. The reflectance results of self-assembled large GaAs islands by DE suggest the possibility of a novel method for antireflective coating. The diameter, height, density, and aspect ratio of large Ga droplets were investigated up to the scale of optical size. After GaAs island growth, the reflectance of s-polarization at 70° on in-situ measurement was reduced up to approximately 2-20 in the wavelength range of 350-900 nm. For large GaAs islands, reduction of reflectance for s-, p-polarization at 20°-80° and reduction of reflectance at normal incidence was presented. This result shows that a layer of self-assembled large GaAs islands by DE can be a good candidate for an antireflector for high-quality optoelectronic devices.

AB - The structural and reflectance properties of large gallium (Ga) droplets and GaAs islands grown by droplet epitaxy (DE) were presented. The reflectance results of self-assembled large GaAs islands by DE suggest the possibility of a novel method for antireflective coating. The diameter, height, density, and aspect ratio of large Ga droplets were investigated up to the scale of optical size. After GaAs island growth, the reflectance of s-polarization at 70° on in-situ measurement was reduced up to approximately 2-20 in the wavelength range of 350-900 nm. For large GaAs islands, reduction of reflectance for s-, p-polarization at 20°-80° and reduction of reflectance at normal incidence was presented. This result shows that a layer of self-assembled large GaAs islands by DE can be a good candidate for an antireflector for high-quality optoelectronic devices.

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Formation of self-assembled large droplet-epitaxial GaAs islands for the application to reduced reflection

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