Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs

Jungwoo Oh, Prashant Majhi, Hi Deok Lee, Kyong Taek Lee, Won Ho Choi, Ji Woon Yang, Yong Kang Chang, Rusty Harris, S. C. Song, Pankaj Kalra, Sehoon Lee, Sanjay Banerjee, Hun Lee Byoung, Hsing Huang Tseng, Raj Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Shallow junctions formed on thin Ge-on-Si heterostructures are characterized in this paper. The reverse leakage current showed a strong dependence on the Ge thickness, which is believed to be due to the different activation temperature of ions implanted in the Ge layers and in the Si substrates. Ge pMOSFETs fabricated on thin Ge layers showed more significant improvement in short channel effects (SCEs) and subthreshold swing (SS) characteristics than those on thick Ge layers. Ge pMOSFETs on thin Ge are a very promising device structure for future technology nodes because of their superior immunity to short channel effects and potential drivability due to their high mobility channel.

Original languageEnglish
Title of host publicationExtended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007
Pages55-60
Number of pages6
DOIs
Publication statusPublished - 2007 Dec 1
Event7th International Workshop on Junction Technologies, IWJT 2007 - Kyoto, Japan
Duration: 2007 Jun 82007 Jun 9

Other

Other7th International Workshop on Junction Technologies, IWJT 2007
CountryJapan
CityKyoto
Period07/6/807/6/9

Fingerprint

Leakage currents
Heterojunctions
Chemical activation
Ions
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Oh, J., Majhi, P., Lee, H. D., Lee, K. T., Choi, W. H., Yang, J. W., ... Jammy, R. (2007). Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs. In Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007 (pp. 55-60). [4279946] https://doi.org/10.1109/IWJT.2007.4279946
Oh, Jungwoo ; Majhi, Prashant ; Lee, Hi Deok ; Lee, Kyong Taek ; Choi, Won Ho ; Yang, Ji Woon ; Chang, Yong Kang ; Harris, Rusty ; Song, S. C. ; Kalra, Pankaj ; Lee, Sehoon ; Banerjee, Sanjay ; Byoung, Hun Lee ; Tseng, Hsing Huang ; Jammy, Raj. / Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs. Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007. 2007. pp. 55-60
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abstract = "Shallow junctions formed on thin Ge-on-Si heterostructures are characterized in this paper. The reverse leakage current showed a strong dependence on the Ge thickness, which is believed to be due to the different activation temperature of ions implanted in the Ge layers and in the Si substrates. Ge pMOSFETs fabricated on thin Ge layers showed more significant improvement in short channel effects (SCEs) and subthreshold swing (SS) characteristics than those on thick Ge layers. Ge pMOSFETs on thin Ge are a very promising device structure for future technology nodes because of their superior immunity to short channel effects and potential drivability due to their high mobility channel.",
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Oh, J, Majhi, P, Lee, HD, Lee, KT, Choi, WH, Yang, JW, Chang, YK, Harris, R, Song, SC, Kalra, P, Lee, S, Banerjee, S, Byoung, HL, Tseng, HH & Jammy, R 2007, Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs. in Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007., 4279946, pp. 55-60, 7th International Workshop on Junction Technologies, IWJT 2007, Kyoto, Japan, 07/6/8. https://doi.org/10.1109/IWJT.2007.4279946

Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs. / Oh, Jungwoo; Majhi, Prashant; Lee, Hi Deok; Lee, Kyong Taek; Choi, Won Ho; Yang, Ji Woon; Chang, Yong Kang; Harris, Rusty; Song, S. C.; Kalra, Pankaj; Lee, Sehoon; Banerjee, Sanjay; Byoung, Hun Lee; Tseng, Hsing Huang; Jammy, Raj.

Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007. 2007. p. 55-60 4279946.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Oh, Jungwoo

AU - Majhi, Prashant

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AU - Lee, Kyong Taek

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AU - Yang, Ji Woon

AU - Chang, Yong Kang

AU - Harris, Rusty

AU - Song, S. C.

AU - Kalra, Pankaj

AU - Lee, Sehoon

AU - Banerjee, Sanjay

AU - Byoung, Hun Lee

AU - Tseng, Hsing Huang

AU - Jammy, Raj

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AB - Shallow junctions formed on thin Ge-on-Si heterostructures are characterized in this paper. The reverse leakage current showed a strong dependence on the Ge thickness, which is believed to be due to the different activation temperature of ions implanted in the Ge layers and in the Si substrates. Ge pMOSFETs fabricated on thin Ge layers showed more significant improvement in short channel effects (SCEs) and subthreshold swing (SS) characteristics than those on thick Ge layers. Ge pMOSFETs on thin Ge are a very promising device structure for future technology nodes because of their superior immunity to short channel effects and potential drivability due to their high mobility channel.

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BT - Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007

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Oh J, Majhi P, Lee HD, Lee KT, Choi WH, Yang JW et al. Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs. In Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007. 2007. p. 55-60. 4279946 https://doi.org/10.1109/IWJT.2007.4279946