Formation of silicon oxide nanowires directly from Au/Si and Pd-Au/Si substrates

Hyun Kyu Park, Beelyong Yang, Sang Woo Kim, Gil Ho Kim, Doo Hyeb Youn, Sang Hyeob Kim, Sung Lyul Maeng

Research output: Contribution to journalArticlepeer-review


Amorphous silicon oxide (SiOx) nanowires were directly grown by thermal processing of Si substrates. Au and Pd-Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiOx nanowires was achieved by a simple heating process (1000-1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiOx nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid-liquid-solid model of nanowire formation was shown to be valid.

Original languageEnglish
Pages (from-to)158-162
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-2
Publication statusPublished - 2007 Mar

Bibliographical note

Funding Information:
This work was supported by the Ministry of Information and Communication, Republic of Korea, under Project no. A1100-0501-0073. The authors thank Dr. J. M. Yang for TEM characterization.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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