Formation of silicon oxide nanowires directly from Au/Si and Pd-Au/Si substrates

Hyun Kyu Park; Beelyong Yang; Sang Woo Kim; Gil Ho Kim; Doo Hyeb Youn; Sang Hyeob Kim; Sung Lyul Maeng

doi:10.1016/j.physe.2006.08.003

Formation of silicon oxide nanowires directly from Au/Si and Pd-Au/Si substrates

Hyun Kyu Park, Beelyong Yang, Sang Woo Kim, Gil Ho Kim, Doo Hyeb Youn, Sang Hyeob Kim, Sung Lyul Maeng

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Amorphous silicon oxide (SiO_x) nanowires were directly grown by thermal processing of Si substrates. Au and Pd-Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiO_x nanowires was achieved by a simple heating process (1000-1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiO_x nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid-liquid-solid model of nanowire formation was shown to be valid.

Original language	English
Pages (from-to)	158-162
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	37
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physe.2006.08.003
Publication status	Published - 2007 Mar

Bibliographical note

Funding Information:
This work was supported by the Ministry of Information and Communication, Republic of Korea, under Project no. A1100-0501-0073. The authors thank Dr. J. M. Yang for TEM characterization.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2006.08.003

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@article{6f931a84c3c44bdda5b41d0fa728b72b,

title = "Formation of silicon oxide nanowires directly from Au/Si and Pd-Au/Si substrates",

abstract = "Amorphous silicon oxide (SiOx) nanowires were directly grown by thermal processing of Si substrates. Au and Pd-Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiOx nanowires was achieved by a simple heating process (1000-1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiOx nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid-liquid-solid model of nanowire formation was shown to be valid.",

author = "Park, {Hyun Kyu} and Beelyong Yang and Kim, {Sang Woo} and Kim, {Gil Ho} and Youn, {Doo Hyeb} and Kim, {Sang Hyeob} and Maeng, {Sung Lyul}",

note = "Funding Information: This work was supported by the Ministry of Information and Communication, Republic of Korea, under Project no. A1100-0501-0073. The authors thank Dr. J. M. Yang for TEM characterization.",

year = "2007",

month = mar,

doi = "10.1016/j.physe.2006.08.003",

language = "English",

volume = "37",

pages = "158--162",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1-2",

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TY - JOUR

T1 - Formation of silicon oxide nanowires directly from Au/Si and Pd-Au/Si substrates

AU - Park, Hyun Kyu

AU - Yang, Beelyong

AU - Kim, Sang Woo

AU - Kim, Gil Ho

AU - Youn, Doo Hyeb

AU - Kim, Sang Hyeob

AU - Maeng, Sung Lyul

N1 - Funding Information: This work was supported by the Ministry of Information and Communication, Republic of Korea, under Project no. A1100-0501-0073. The authors thank Dr. J. M. Yang for TEM characterization.

PY - 2007/3

Y1 - 2007/3

N2 - Amorphous silicon oxide (SiOx) nanowires were directly grown by thermal processing of Si substrates. Au and Pd-Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiOx nanowires was achieved by a simple heating process (1000-1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiOx nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid-liquid-solid model of nanowire formation was shown to be valid.

AB - Amorphous silicon oxide (SiOx) nanowires were directly grown by thermal processing of Si substrates. Au and Pd-Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiOx nanowires was achieved by a simple heating process (1000-1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiOx nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid-liquid-solid model of nanowire formation was shown to be valid.

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SP - 158

EP - 162

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2

ER -

Formation of silicon oxide nanowires directly from Au/Si and Pd-Au/Si substrates

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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