Formation of single-crystal silicon layers on insulator islands using selective epitaxial growth and laser crystallization

Hans S. Cho, Wenxu Xianyu, Xiaoxin Zhang, Huaxiang Yin, Do Young Kim, Kyung Bae Park, Jang Yeon Kwon, Takashi Noguchi

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)


SOI-like single-crystal silicon films on insulator islands are grown from SOI and bulk Si wafer substrates by a process combining vapor-phase epitaxy and laser crystallization. Ultra-high vacuum (UHV) CVD selective epitaxy is used to grow single-crystal Si, seeded from and normal to the substrate, between patterned insulator islands (SiO2 or Si3N 4/SiO2) up to the thickness of the insulator islands. Amorphous Si (a-Si) is sputter-deposited over both the epitaxially grown Si regions and the insulator islands, and the a-Si is completely melted by a single excimer laser pulse, leading to solidification of the molten Si seeded from the single-crystal Si regions. Analyses of the resulting microstructures reveal that lateral crystallization extends into the center of the insulator island, and that the laterally crystallized film is single-crystalline. The maximum measured lateral growth distance was greater than 2.5 microns. This paper details the microstructural analyses of the crystallized Si film, and discusses the mechanism of laser-induced lateral crystallization and the significance of heat flow and the Si3N4/SiO2 layers in attaining large lateral growth lengths.

Original languageEnglish
Number of pages6
Publication statusPublished - 2005
Event207th ECS Meeting - Quebec, Canada
Duration: 2005 May 162005 May 20


Other207th ECS Meeting

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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