Formation of suicide nanowires by annealing of atomic layer deposition cobalt/silicon core-shell nanowires

Han Bo Ram Lee, Kwang Heo, Seunghun Hong, Hyungjun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Co/Si core-shell nanowires (NWs) were fabricated by using highly conformai thermal atomic layer deposition (TH-ALD) of Co and the formation of Co suicide NWs by annealing was investigated. When Co/Si core-shell NWs were annealed without capping layer, no Co suicide was observed due to oxygen contamination. To prevent oxygen contamination, in situ TH-ALD Ru was used for capping layer utilizing its excellent conformality suitable for 3-D nanostructures as well as thermal stability. The scanning transmission electron spectroscopy analysis showed Si NWs are perfectly wrapped by TH-ALD Ru/Co films, resulting in the formation of Ru/Co/Si core-shell NWs. By annealing Ru/Co/Si core-shell NWs, CoSi2 was formed above Ta = 800 ° C. This silicidation by using TH-ALD Co and Ru can be effectively used for the fabrication of future nanoscale devices.

Original languageEnglish
Title of host publicationECS Transactions - Atomic Layer Deposition Applications 5
Pages157-161
Number of pages5
Edition4
Publication statusPublished - 2009
Event5th Symposium on Atomic Layer Deposition - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 52009 Oct 7

Publication series

NameECS Transactions
Number4
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th Symposium on Atomic Layer Deposition - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period09/10/509/10/7

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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