Formation of suicide nanowires by annealing of atomic layer deposition cobalt/silicon core-shell nanowires

Han Bo Ram Lee, Kwang Heo, Seunghun Hong, Hyungjun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Co/Si core-shell nanowires (NWs) were fabricated by using highly conformai thermal atomic layer deposition (TH-ALD) of Co and the formation of Co suicide NWs by annealing was investigated. When Co/Si core-shell NWs were annealed without capping layer, no Co suicide was observed due to oxygen contamination. To prevent oxygen contamination, in situ TH-ALD Ru was used for capping layer utilizing its excellent conformality suitable for 3-D nanostructures as well as thermal stability. The scanning transmission electron spectroscopy analysis showed Si NWs are perfectly wrapped by TH-ALD Ru/Co films, resulting in the formation of Ru/Co/Si core-shell NWs. By annealing Ru/Co/Si core-shell NWs, CoSi 2 was formed above T a = 800 ° C. This silicidation by using TH-ALD Co and Ru can be effectively used for the fabrication of future nanoscale devices.

Original languageEnglish
Title of host publicationECS Transactions - Atomic Layer Deposition Applications 5
Pages157-161
Number of pages5
Edition4
Publication statusPublished - 2009 Dec 1
Event5th Symposium on Atomic Layer Deposition - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 52009 Oct 7

Publication series

NameECS Transactions
Number4
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th Symposium on Atomic Layer Deposition - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period09/10/509/10/7

Fingerprint

Atomic layer deposition
Nanowires
Cobalt
Annealing
Silicon
Contamination
Oxygen
Electron spectroscopy
Nanostructures
Thermodynamic stability
Scanning
Fabrication
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lee, H. B. R., Heo, K., Hong, S., & Kim, H. (2009). Formation of suicide nanowires by annealing of atomic layer deposition cobalt/silicon core-shell nanowires. In ECS Transactions - Atomic Layer Deposition Applications 5 (4 ed., pp. 157-161). (ECS Transactions; Vol. 25, No. 4).
Lee, Han Bo Ram ; Heo, Kwang ; Hong, Seunghun ; Kim, Hyungjun. / Formation of suicide nanowires by annealing of atomic layer deposition cobalt/silicon core-shell nanowires. ECS Transactions - Atomic Layer Deposition Applications 5. 4. ed. 2009. pp. 157-161 (ECS Transactions; 4).
@inproceedings{471e1a1c34964d33a203e0e08c0c3de7,
title = "Formation of suicide nanowires by annealing of atomic layer deposition cobalt/silicon core-shell nanowires",
abstract = "Co/Si core-shell nanowires (NWs) were fabricated by using highly conformai thermal atomic layer deposition (TH-ALD) of Co and the formation of Co suicide NWs by annealing was investigated. When Co/Si core-shell NWs were annealed without capping layer, no Co suicide was observed due to oxygen contamination. To prevent oxygen contamination, in situ TH-ALD Ru was used for capping layer utilizing its excellent conformality suitable for 3-D nanostructures as well as thermal stability. The scanning transmission electron spectroscopy analysis showed Si NWs are perfectly wrapped by TH-ALD Ru/Co films, resulting in the formation of Ru/Co/Si core-shell NWs. By annealing Ru/Co/Si core-shell NWs, CoSi 2 was formed above T a = 800 ° C. This silicidation by using TH-ALD Co and Ru can be effectively used for the fabrication of future nanoscale devices.",
author = "Lee, {Han Bo Ram} and Kwang Heo and Seunghun Hong and Hyungjun Kim",
year = "2009",
month = "12",
day = "1",
language = "English",
isbn = "9781566777414",
series = "ECS Transactions",
number = "4",
pages = "157--161",
booktitle = "ECS Transactions - Atomic Layer Deposition Applications 5",
edition = "4",

}

Lee, HBR, Heo, K, Hong, S & Kim, H 2009, Formation of suicide nanowires by annealing of atomic layer deposition cobalt/silicon core-shell nanowires. in ECS Transactions - Atomic Layer Deposition Applications 5. 4 edn, ECS Transactions, no. 4, vol. 25, pp. 157-161, 5th Symposium on Atomic Layer Deposition - 216th Meeting of the Electrochemical Society, Vienna, Austria, 09/10/5.

Formation of suicide nanowires by annealing of atomic layer deposition cobalt/silicon core-shell nanowires. / Lee, Han Bo Ram; Heo, Kwang; Hong, Seunghun; Kim, Hyungjun.

ECS Transactions - Atomic Layer Deposition Applications 5. 4. ed. 2009. p. 157-161 (ECS Transactions; Vol. 25, No. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Formation of suicide nanowires by annealing of atomic layer deposition cobalt/silicon core-shell nanowires

AU - Lee, Han Bo Ram

AU - Heo, Kwang

AU - Hong, Seunghun

AU - Kim, Hyungjun

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Co/Si core-shell nanowires (NWs) were fabricated by using highly conformai thermal atomic layer deposition (TH-ALD) of Co and the formation of Co suicide NWs by annealing was investigated. When Co/Si core-shell NWs were annealed without capping layer, no Co suicide was observed due to oxygen contamination. To prevent oxygen contamination, in situ TH-ALD Ru was used for capping layer utilizing its excellent conformality suitable for 3-D nanostructures as well as thermal stability. The scanning transmission electron spectroscopy analysis showed Si NWs are perfectly wrapped by TH-ALD Ru/Co films, resulting in the formation of Ru/Co/Si core-shell NWs. By annealing Ru/Co/Si core-shell NWs, CoSi 2 was formed above T a = 800 ° C. This silicidation by using TH-ALD Co and Ru can be effectively used for the fabrication of future nanoscale devices.

AB - Co/Si core-shell nanowires (NWs) were fabricated by using highly conformai thermal atomic layer deposition (TH-ALD) of Co and the formation of Co suicide NWs by annealing was investigated. When Co/Si core-shell NWs were annealed without capping layer, no Co suicide was observed due to oxygen contamination. To prevent oxygen contamination, in situ TH-ALD Ru was used for capping layer utilizing its excellent conformality suitable for 3-D nanostructures as well as thermal stability. The scanning transmission electron spectroscopy analysis showed Si NWs are perfectly wrapped by TH-ALD Ru/Co films, resulting in the formation of Ru/Co/Si core-shell NWs. By annealing Ru/Co/Si core-shell NWs, CoSi 2 was formed above T a = 800 ° C. This silicidation by using TH-ALD Co and Ru can be effectively used for the fabrication of future nanoscale devices.

UR - http://www.scopus.com/inward/record.url?scp=74249100150&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74249100150&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:74249100150

SN - 9781566777414

T3 - ECS Transactions

SP - 157

EP - 161

BT - ECS Transactions - Atomic Layer Deposition Applications 5

ER -

Lee HBR, Heo K, Hong S, Kim H. Formation of suicide nanowires by annealing of atomic layer deposition cobalt/silicon core-shell nanowires. In ECS Transactions - Atomic Layer Deposition Applications 5. 4 ed. 2009. p. 157-161. (ECS Transactions; 4).