Four-Bits-Per-Cell Operation in an HfO2-Based Resistive Switching Device

Gun Hwan Kim; Hyunsu Ju; Min Kyu Yang; Dong Kyu Lee; Ji Woon Choi; Jae Hyuck Jang; Sang Gil Lee; Ik Su Cha; Bo Keun Park; Jeong Hwan Han; Taek Mo Chung; Kyung Min Kim; Cheol Seong Hwang; Young Kuk Lee

doi:10.1002/smll.201701781

Four-Bits-Per-Cell Operation in an HfO₂-Based Resistive Switching Device

Gun Hwan Kim, Hyunsu Ju, Min Kyu Yang, Dong Kyu Lee, Ji Woon Choi, Jae Hyuck Jang, Sang Gil Lee, Ik Su Cha, Bo Keun Park, Jeong Hwan Han, Taek Mo Chung, Kyung Min Kim, Cheol Seong Hwang, Young Kuk Lee

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The quadruple-level cell technology is demonstrated in an Au/Al₂O₃/HfO₂/TiN resistance switching memory device using the industry-standard incremental step pulse programming (ISPP) and error checking/correction (ECC) methods. With the highly optimistic properties of the tested device, such as self-compliance and gradual set-switching behaviors, the device shows 6σ reliability up to 16 states with a state current gap value of 400 nA for the total allowable programmed current range from 2 to 11 µA. It is demonstrated that the conventional ISPP/ECC can be applied to such resistance switching memory, which may greatly contribute to the commercialization of the device, especially competitively with NAND flash. A relatively minor improvement in the material and circuitry may enable even a five-bits-per-cell technology, which can hardly be imagined in NAND flash, whose state-of-the-art multiple-cell technology is only at three-level (eight states) to this day.

Original language	English
Article number	1701781
Journal	Small
Volume	13
Issue number	40
DOIs	https://doi.org/10.1002/smll.201701781
Publication status	Published - 2017 Oct 25

Bibliographical note

Funding Information:
G.H.K. and H.J. contributed equally to this work. The financial support obtained from the Development of Organometallics and Device Fabrication for IT-ET Convergence Project through the Korea Research Institute of Chemical Technology (KRICT) of the Republic of Korea (SI1703-02) is acknowledged. C.S.H. acknowledges the support from the Global Research Laboratory Program (2012K1A1A2040157) of the National Research Foundation of Korea (NRF). H.J. appreciates the financial support from the KIST Institution Program (Program 2E27160).

Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Biotechnology
Biomaterials

Access to Document

10.1002/smll.201701781

Cite this

@article{dfd36d43c4ef458f9ff45da4afbac56a,

title = "Four-Bits-Per-Cell Operation in an HfO2-Based Resistive Switching Device",

abstract = "The quadruple-level cell technology is demonstrated in an Au/Al2O3/HfO2/TiN resistance switching memory device using the industry-standard incremental step pulse programming (ISPP) and error checking/correction (ECC) methods. With the highly optimistic properties of the tested device, such as self-compliance and gradual set-switching behaviors, the device shows 6σ reliability up to 16 states with a state current gap value of 400 nA for the total allowable programmed current range from 2 to 11 µA. It is demonstrated that the conventional ISPP/ECC can be applied to such resistance switching memory, which may greatly contribute to the commercialization of the device, especially competitively with NAND flash. A relatively minor improvement in the material and circuitry may enable even a five-bits-per-cell technology, which can hardly be imagined in NAND flash, whose state-of-the-art multiple-cell technology is only at three-level (eight states) to this day.",

author = "Kim, {Gun Hwan} and Hyunsu Ju and Yang, {Min Kyu} and Lee, {Dong Kyu} and Choi, {Ji Woon} and Jang, {Jae Hyuck} and Lee, {Sang Gil} and Cha, {Ik Su} and Park, {Bo Keun} and Han, {Jeong Hwan} and Chung, {Taek Mo} and Kim, {Kyung Min} and Hwang, {Cheol Seong} and Lee, {Young Kuk}",

note = "Funding Information: G.H.K. and H.J. contributed equally to this work. The financial support obtained from the Development of Organometallics and Device Fabrication for IT-ET Convergence Project through the Korea Research Institute of Chemical Technology (KRICT) of the Republic of Korea (SI1703-02) is acknowledged. C.S.H. acknowledges the support from the Global Research Laboratory Program (2012K1A1A2040157) of the National Research Foundation of Korea (NRF). H.J. appreciates the financial support from the KIST Institution Program (Program 2E27160). Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2017",

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doi = "10.1002/smll.201701781",

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AU - Kim, Gun Hwan

AU - Ju, Hyunsu

AU - Yang, Min Kyu

AU - Lee, Dong Kyu

AU - Choi, Ji Woon

AU - Jang, Jae Hyuck

AU - Lee, Sang Gil

AU - Cha, Ik Su

AU - Park, Bo Keun

AU - Han, Jeong Hwan

AU - Chung, Taek Mo

AU - Kim, Kyung Min

AU - Hwang, Cheol Seong

AU - Lee, Young Kuk

N1 - Funding Information: G.H.K. and H.J. contributed equally to this work. The financial support obtained from the Development of Organometallics and Device Fabrication for IT-ET Convergence Project through the Korea Research Institute of Chemical Technology (KRICT) of the Republic of Korea (SI1703-02) is acknowledged. C.S.H. acknowledges the support from the Global Research Laboratory Program (2012K1A1A2040157) of the National Research Foundation of Korea (NRF). H.J. appreciates the financial support from the KIST Institution Program (Program 2E27160). Publisher Copyright: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2017/10/25

Y1 - 2017/10/25

N2 - The quadruple-level cell technology is demonstrated in an Au/Al2O3/HfO2/TiN resistance switching memory device using the industry-standard incremental step pulse programming (ISPP) and error checking/correction (ECC) methods. With the highly optimistic properties of the tested device, such as self-compliance and gradual set-switching behaviors, the device shows 6σ reliability up to 16 states with a state current gap value of 400 nA for the total allowable programmed current range from 2 to 11 µA. It is demonstrated that the conventional ISPP/ECC can be applied to such resistance switching memory, which may greatly contribute to the commercialization of the device, especially competitively with NAND flash. A relatively minor improvement in the material and circuitry may enable even a five-bits-per-cell technology, which can hardly be imagined in NAND flash, whose state-of-the-art multiple-cell technology is only at three-level (eight states) to this day.

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