Free-exciton luminescence from ZnSe1-xTex

C. D. Lee; H. L. Park; C. H. Chung; S. K. Chang

doi:10.1103/PhysRevB.45.4491

Free-exciton luminescence from ZnSe1-xTex

C. D. Lee, H. L. Park, C. H. Chung, S. K. Chang

Department of Physics

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26 Citations (Scopus)

Abstract

Temperature dependences of luminescence for the free exciton and the Te-induced self-trapped exciton in ZnSe1-xTex (x0.005) are studied. The intensity of the free-exciton line increases up to 50 K with the temperature and decreases above that temperature, while that of the self-trapped broadband monotonically decreases. This phenomenon is quantitatively analyzed in the framework of a kinetic model and discussed by using a configurational coordinate diagram.

Original language	English
Pages (from-to)	4491-4493
Number of pages	3
Journal	Physical Review B
Volume	45
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.45.4491
Publication status	Published - 1992

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1103/PhysRevB.45.4491

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abstract = "Temperature dependences of luminescence for the free exciton and the Te-induced self-trapped exciton in ZnSe1-xTex (x0.005) are studied. The intensity of the free-exciton line increases up to 50 K with the temperature and decreases above that temperature, while that of the self-trapped broadband monotonically decreases. This phenomenon is quantitatively analyzed in the framework of a kinetic model and discussed by using a configurational coordinate diagram.",

author = "Lee, {C. D.} and Park, {H. L.} and Chung, {C. H.} and Chang, {S. K.}",

year = "1992",

doi = "10.1103/PhysRevB.45.4491",

language = "English",

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issn = "0163-1829",

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T1 - Free-exciton luminescence from ZnSe1-xTex

AU - Lee, C. D.

AU - Park, H. L.

AU - Chung, C. H.

AU - Chang, S. K.

PY - 1992

Y1 - 1992

N2 - Temperature dependences of luminescence for the free exciton and the Te-induced self-trapped exciton in ZnSe1-xTex (x0.005) are studied. The intensity of the free-exciton line increases up to 50 K with the temperature and decreases above that temperature, while that of the self-trapped broadband monotonically decreases. This phenomenon is quantitatively analyzed in the framework of a kinetic model and discussed by using a configurational coordinate diagram.

AB - Temperature dependences of luminescence for the free exciton and the Te-induced self-trapped exciton in ZnSe1-xTex (x0.005) are studied. The intensity of the free-exciton line increases up to 50 K with the temperature and decreases above that temperature, while that of the self-trapped broadband monotonically decreases. This phenomenon is quantitatively analyzed in the framework of a kinetic model and discussed by using a configurational coordinate diagram.

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SN - 0163-1829

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Free-exciton luminescence from ZnSe1-xTex

Abstract

All Science Journal Classification (ASJC) codes

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