Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD

Annamraju Kasi Viswanath, Joo In Lee, C. R. Lee, J. Y. Leem, Dongho Kim

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Abstract

We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.

Original languageEnglish
Pages (from-to)483-487
Number of pages5
JournalSolid State Communications
Volume108
Issue number7
Publication statusPublished - 1998 Oct 16

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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