Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD

Annamraju Kasi Viswanath, Joo In Lee, C. R. Lee, J. Y. Leem, Dongho Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.

Original languageEnglish
Pages (from-to)483-487
Number of pages5
JournalSolid State Communications
Volume108
Issue number7
DOIs
Publication statusPublished - 1998 Oct 16

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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