We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.
|Number of pages||5|
|Journal||Solid State Communications|
|Publication status||Published - 1998 Oct 16|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry