Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD

Annamraju Kasi Viswanath, Joo In Lee, C. R. Lee, J. Y. Leem, Dongho Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.

Original languageEnglish
Pages (from-to)483-487
Number of pages5
JournalSolid State Communications
Volume108
Issue number7
Publication statusPublished - 1998 Oct 16

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Organic Chemicals
Organic chemicals
Epitaxial layers
Electron transitions
Excitons
metalorganic chemical vapor deposition
Chemical vapor deposition
low pressure
Metals
excitons
coefficients
Aluminum Oxide
Sapphire
Temperature
Photoluminescence
sapphire
Energy gap
photoluminescence
temperature dependence
temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Viswanath, Annamraju Kasi ; Lee, Joo In ; Lee, C. R. ; Leem, J. Y. ; Kim, Dongho. / Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD. In: Solid State Communications. 1998 ; Vol. 108, No. 7. pp. 483-487.
@article{9dda2f34220f45ee8ded3e02324d9a66,
title = "Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD",
abstract = "We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.",
author = "Viswanath, {Annamraju Kasi} and Lee, {Joo In} and Lee, {C. R.} and Leem, {J. Y.} and Dongho Kim",
year = "1998",
month = "10",
day = "16",
language = "English",
volume = "108",
pages = "483--487",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "7",

}

Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD. / Viswanath, Annamraju Kasi; Lee, Joo In; Lee, C. R.; Leem, J. Y.; Kim, Dongho.

In: Solid State Communications, Vol. 108, No. 7, 16.10.1998, p. 483-487.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Free exciton transitions and Varshni's coefficients for GaN epitaxial layers grown by horizontal LP-MOCVD

AU - Viswanath, Annamraju Kasi

AU - Lee, Joo In

AU - Lee, C. R.

AU - Leem, J. Y.

AU - Kim, Dongho

PY - 1998/10/16

Y1 - 1998/10/16

N2 - We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.

AB - We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition (LP-MOCVD) method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.

UR - http://www.scopus.com/inward/record.url?scp=0032182526&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032182526&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032182526

VL - 108

SP - 483

EP - 487

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 7

ER -